Memory controller, memory system with improved threshold voltage distribution characteristics, and operation method

Patent metadata

Field	Value
Publication number	US-11894079-B2
Application number	US-202117384219-A
Country	US
Kind code	B2
Filing date	Jul 23, 2021
Priority date	Oct 29, 2020
Publication date	Feb 6, 2024
Grant date	Feb 6, 2024

Abstract

A memory controller includes an over-program controller that preprograms and then erases the memory cells such that each of the memory cells has a first threshold voltage level, wherein fast cells are detected among the memory cells according to a threshold voltage less than or equal to a second threshold voltage less than the first threshold voltage, and a processor that generates fast cell information identifying the fast cells among the memory cells and stores the fast cell information in a buffer. The over-program controller controls the over-programming of the fast cells and normal programming of normal cells among the memory cells based on the fast cell information stored in the buffer.

First claim

What is claimed is:

1. A method of operating a memory system including memory cells, the method comprising:
preprogramming and erasing the memory cells to set a first threshold voltage distribution for the memory cells;
detecting fast cells among the memory cells set in the first threshold voltage distribution, wherein normal cells among the memory cells each have a threshold voltage equal to or greater than a first threshold voltage, and the fast cells each have a threshold voltage less than or equal to a second threshold voltage which is less than the first threshold voltage; and
programming the memory cells set in the first threshold voltage distribution to a second threshold voltage distribution greater than the first threshold voltage distribution, said programming comprising,
normal programming the normal cells to the second threshold voltage distribution by applying a sequence of incremental step pulse program (ISPP) voltage pulses to the normal cells, and
over-programming the fast cells to the second threshold voltage distribution by applying the sequence of ISPP voltage pulses to the fast cells,

wherein a voltage of an ISPP voltage pulse applied during over-programming is greater than a voltage of a corresponding ISPP voltage pulse applied during normal programming, and
wherein a level of a verification voltage applied during the over-programming is greater than a level of a corresponding verification voltage applied during the normal programming.

2. The method of claim 1 , wherein an increment step of the ISPP voltage pulses applied during over-programming is greater than an increment step of the ISPP voltage pulses applied during the normal programming.

3. The method of claim 1 , wherein a voltage level of a first ISPP voltage pulse applied during the over-programming is greater than a voltage level of a first ISPP voltage pulse applied during the normal programming.

4. The method of claim 1 , wherein an erase speed for the fast cells is faster than an erase speed for the normal cells.

5. A memory controller of a memory device including memory cells, the memory controller comprising:
an over-program controller configured to preprogram the memory cells in preprogramming and then erase the memory cells to set the memory cells in a first threshold voltage distribution, and to detect fast cells among the memory cells set in the first program distribution, wherein normal cells among the memory cells each have a threshold voltage equal to or greater than a first threshold voltage, and the fast cells each have a threshold voltage less than or equal to a second threshold voltage less than the first threshold voltage; and
a processor configured to generate fast cell information identifying the fast cells among the memory cells and store the fast cell information in a buffer,
wherein the over-program controller is further configured to control programming of the memory cells from the first threshold voltage distribution to a second threshold voltage distribution greater than the first threshold voltage distribution with reference to the fast cell information stored in the buffer, wherein the programming comprises:
normal programming the normal cells to the second threshold voltage distribution by applying a sequence of incremental step pulse program (ISPP) voltage pulses to the normal cells, and
over-programming the fast cells to the second threshold voltage distribution by applying the sequence of ISPP voltage pulses to the fast cells,

wherein a voltage of an ISPP voltage pulses applied during over-programming is greater than a voltage of a corresponding ISPP voltage pulse applied during normal programming, and
wherein a level of a verification voltage applied during the over-programming is greater than a level of a corresponding verification voltage applied during the normal programming.

6. The memory controller of claim 5 , further comprising:
a host interface configured to receive a program request identifying the memory cells and memory cell information characterizing the memory cells,
wherein the over-program controller determines first target cells among the memory cells based on the memory cell information on the fast cell information.

7. The memory controller of claim 6 , wherein the first target cells correspond to any one of an intersection, union, difference, and symmetric difference between sets of the fast cells and second target cells.

8. The memory controller of claim 7 , wherein the second target cells include at least one of the memory cells to be programmed and at least one memory cell at a predetermined position in a memory cell array of the memory device.

9. The memory controller of claim 6 , wherein the over-program controller is further configured to control the memory device such that threshold voltage levels of memory cells in a first program state among the first target cells are set to a second threshold voltage level greater than the first threshold voltage level.

10. The memory controller of claim 9 , wherein the memory cells are triple level memory cells (TLC), and the first program state is a seventh program state P 7 for the TLC.

11. The memory controller of claim 6 , wherein the memory cell information includes position information identifying a position for each memory cell relative to a channel hole, and
the over-program controller is further configured to determine the first target cells based on the position information.

12. A memory device comprising:
a memory cell array including a first block of first memory cells and a second block of second memory cells; and
control logic configured to preprogram and then erase the first memory cells such that each of the first memory cells has a first threshold voltage level, wherein fast cells are detected among the memory cells according to a threshold voltage less than or equal to a second threshold voltage less than the first threshold voltage,
wherein the control logic is further configured to generate fast cell information associated with the fast cells and store the fast cell information in the second block, and upon receiving a program command directed to the first memory cells, over-programming the fast cells by referencing the fast cell information stored in the second memory cells, and
wherein the control logic is further configured to compare a number of the fast cells to a reference threshold value, and
stores the fast cell information in the second memory cells block only if the number of fast cells is greater than the reference threshold value.

13. The memory device of claim 12 , wherein a threshold voltage level for the fast cells following the over-programming is greater than a threshold voltage level following a normal programming of normal cells among the first memory cells.

14. The memory device of claim 13 , wherein the over-programming and the normal programming are respectively performed using an incremental step pulse program (ISPP) method, and
the control logic is further configured to increase at least one of an increment step for voltage pulses, a start voltage level for a voltage pulse, a number of voltage pulses, and a level of a verification voltage.

15. The memory controller of claim 5 , wherein a voltage level of a first ISPP voltage pulse applied during the over-programming is greater than a voltage level of a first ISPP voltage pulse applied during the normal programming.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Hyeji
• Lee Raeyoung
• Kang Jinkyu
• Park Sejun
• Lee Jaeduk

Classifications

• G11C16/3463 Primary

  Circuits or methods to detect overprogrammed nonvolatile memory cells, usually during program verification · CPC title

• G11C16/102

  External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators · CPC title

• G11C16/26

  Sensing or reading circuits; Data output circuits · CPC title

• G11C16/3404

  Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells · CPC title

• G11C16/3486 Primary

  Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming · CPC title