Multi-layer phase change memory device
US-2022209105-A1 · Jun 30, 2022 · US
Multi-layer phase change memory device
US11889773B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11889773-B2 |
| Application number | US-202318172385-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 22, 2023 |
| Priority date | Dec 29, 2020 |
| Publication date | Jan 30, 2024 |
| Grant date | Jan 30, 2024 |
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- Title
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- Abstract
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Abstract
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A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity.
First claim
Opening claim text (preview).
What is claimed is: 1. A phase change memory (PCM) cell comprising: a first electrode comprised of a first electrically conductive material; a second electrode comprised of a second electrically conductive material; a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material having a first resistivity; a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material having a second resistivity; and a third phase change layer in contact with the first phase change layer and the second electrode, the third phase change layer comprised of a third phase change material having a third resistivity; wherein the first resistivity is at least two times the second resistivity and is at least two times the third resistivity. 2. The PCM cell of claim 1 , wherein the third phase change layer further comprises a dopant material. 3. The PCM cell of claim 1 , wherein the first phase change layer further comprises a dopant material. 4. The PCM cell of claim 3 , wherein the second phase change layer is composed of the second phase change material. 5. The PCM cell of claim 1 , wherein the second phase change layer is in contact with the first electrode and the second electrode. 6. The PCM cell of claim 1 , further comprising: a projection liner positioned between the first electrode and the second electrode and being comprised of a semiconducting material. 7. The PCM cell of claim 6 , wherein the projection liner is in contact with the first electrode and the second phase change layer. 8. A phase change memory (PCM) cell comprising: a first electrode comprised of a first electrically conductive material; a second electrode comprised of a second electrically conductive material; a first phase change layer positioned between the first electrode and the second electrode, the first phase change layer being comprised of a first phase change material; and a second phase change layer positioned between the first electrode and the second electrode, the second phase change layer being comprised of a second phase change material; wherein the second phase change layer is in contact with the first electrode and the second electrode. 9. The PCM cell of claim 8 , wherein the first phase change layer has a first thickness and the second phase change layer has a second thickness, the PCM cell further comprising: a third phase change layer in contact with the first phase change layer and the second electrode, the third phase change layer having a third thickness and being comprised of a third phase change material; wherein the third thickness is less than one-quarter of the first thickness. 10. The PCM cell of claim 8 , wherein the third phase change layer further comprises a dopant material. 11. The PCM cell of claim 8 , wherein the first phase change layer further comprises a dopant material. 12. The PCM cell of claim 11 , wherein the second phase change layer is composed essentially of the second phase change material that is undoped. 13. The PCM cell of claim 8 , wherein: the first phase change layer has a first resistivity; the second phase change layer has a second resistivity; and the first resistivity is at least two times the second resistivity. 14. The PCM cell of claim 8 , further comprising a projection liner positioned between the first electrode and the second electrode and being comprised of a semiconducting material wherein the projection liner is in contact with the first electrode and the second phase change layer. 15. A phase change memory (PCM) cell comprising: a first electrode comprised of a first electrically conductive material; a second electrode comprised of a second electrically conductive material; a first phase change layer positioned between the first electrode and the second electrode, the first phase change layer having a first thickness and being comprised of a first phase change material; a second phase change layer positioned between the first electrode and the second electrode, the second phase change layer having a second thickness and being comprised of a second phase change material; and a projection liner positioned between the first electrode and the second electrode and being comprised of a semiconducting material. 16. The PCM cell of claim 15 , wherein the first phase change layer has a first thickness and the second phase change layer has a second thickness, the PCM cell further comprising: a third phase change layer in contact with the first phase change layer and the second electrode, the third phase change layer having a third thickness and being comprised of a third phase change material; wherein the third thickness is less than one-quarter of the first thickness. 17. The PCM cell of claim 15 , wherein the third phase change layer further comprises a dopant material. 18. The PCM cell of claim 15 , wherein: the first phase change layer further comprises a dopant material; and the second phase change layer is composed essentially of the second phase change material that is undoped. 19. The PCM cell of claim 15 , wherein: the first phase change layer has a first resistivity; the second phase change layer has a second resistivity; and the first resistivity is at least two times the second resistivity. 20. The PCM cell of claim 15 , wherein the projection liner is in contact with the first electrode and the second phase change layer.
Assignees
Inventors
Classifications
- H10N70/231Primary
based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect · CPC title
using elements simulating biological cells, e.g. neuron · CPC title
- G11C13/0004Primary
comprising amorphous/crystalline phase transition cells · CPC title
of the Ovonic threshold switching type · CPC title
adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title
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- What does patent US11889773B2 cover?
- A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first …
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10N70/231. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 30 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).