Memory devices with selector layer and methods of forming the same
US-2024032309-A1 · Jan 25, 2024 · US
of the Ovonic threshold switching type
of the Ovonic threshold switching type · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10B63/24 |
| Official title | {of the Ovonic threshold switching type} |
| Display label | of the Ovonic threshold switching type |
| Total patents | 1,823 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 46 |
| 2016 | 78 |
| 2017 | 135 |
| 2018 | 158 |
| 2019 | 202 |
| 2020 | 275 |
| 2021 | 250 |
| 2022 | 190 |
| 2023 | 165 |
| 2024 | 141 |
| 2025 | 150 |
| 2026 | 33 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Array Of Memory Cells, Methods Associated With Forming Memory Cells That Comprise Programmable Material, And Methods Associated With Forming Memory Cells That Comprise Selector Device Material
US-2016307963-A1 · Oct 20, 2016 · US
Apparatuses and methods including memory access in cross point memory
US-2016293254-A1 · Oct 6, 2016 · US
Semiconductor memory device
US-2016268342-A1 · Sep 15, 2016 · US
Electronic device
US-2016247858-A1 · Aug 25, 2016 · US
Memory cells having a heater electrode formed between a first storage material and a second storage material and methods of forming the same
US-9406881-B1 · Aug 2, 2016 · US
Electronic device and method for fabricating the same
US-9391273-B1 · Jul 12, 2016 · US
Phase-change memory cell implant for dummy array leakage reduction
US-2016181324-A1 · Jun 23, 2016 · US
Array of cross point memory cells and methods of forming an array of cross point memory cells
US-9362494-B2 · Jun 7, 2016 · US
Connections for memory electrode lines
US-2016133300-A1 · May 12, 2016 · US
Memory cells and methods of forming memory cells
US-9324945-B2 · Apr 26, 2016 · US
Select device for memory cell applications
US-2016111639-A1 · Apr 21, 2016 · US
Resistive memory devices
US-2016086664-A1 · Mar 24, 2016 · US
Thermally optimized phase change memory cells and methods of fabricating the same
US-2016013404-A1 · Jan 14, 2016 · US
Resistive memory devices
US-9224945-B2 · Dec 29, 2015 · US
Connections for memory electrode lines
US-9224635-B2 · Dec 29, 2015 · US
Memory cell arrays
US-9214627-B2 · Dec 15, 2015 · US
Memory cells and memory cell formation methods using sealing material
US-2015357565-A1 · Dec 10, 2015 · US
Array Of Cross Point Memory Cells And Methods Of Forming An Array Of Cross Point Memory Cells
US-2015349255-A1 · Dec 3, 2015 · US
Memory cells having a number of conductive diffusion barrier materials and manufacturing methods
US-2015349249-A1 · Dec 3, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10B63/24?
- CPC H10B63/24 is the Cooperative Patent Classification code for “of the Ovonic threshold switching type.”
- How many patents are filed under CPC H10B63/24 (of the Ovonic threshold switching type)?
- Our database includes 1,823 publications tagged with this CPC code.
- Is patent activity under CPC H10B63/24 growing?
- Publication counts under this code: 141 in 2024 vs 150 in 2025 (latest complete years).