Bottom Fed Sublimation Bed for High Saturation Efficiency in Semiconductor Applications
US-2022403512-A1 · Dec 22, 2022 · US
Precursor container
US11873558B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11873558-B2 |
| Application number | US-202217903173-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 6, 2022 |
| Priority date | Sep 7, 2021 |
| Publication date | Jan 16, 2024 |
| Grant date | Jan 16, 2024 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
Precursor container, comprising a first volume formed by a first chamber to house precursor material, a second volume formed by a second chamber and separated from the first volume by a partition wall, and a conduit passing through the partition wall and extending from the first volume to the second volume providing the precursor material housed within the first volume with a route to the second volume following a pressure increase in the first volume. The partition wall is a gas-permeable wall allowing gas from the first volume to permeate to the second volume.
First claim
Opening claim text (preview).
The invention claimed is: 1. A precursor container, comprising: a first volume formed by a first chamber to house precursor material; a second volume formed by a second chamber and separated from the first volume by a partition wall; and a conduit passing through the partition wall and extending from the first volume to the second volume, wherein the conduit comprises an inlet disposed in the first volume and immersed in the precursor material, below a surface level or meniscus of the precursor material, and an outlet disposed in the second volume, thus providing the precursor material housed within the first volume with a route to the second volume, following a pressure increase in the first volume, and the partition wall being a gas-permeable wall allowing gas from the first volume to permeate to the second volume. 2. The precursor container of claim 1 , wherein the precursor container comprises an inlet arranged to the first volume. 3. The precursor container of claim 1 , wherein the precursor container comprises an outlet arranged to the second volume. 4. The precursor container of claim 1 , wherein the precursor container comprises an inlet arranged to the first volume for providing inert gas to the first volume during a pulsing stage. 5. The precursor container of claim 1 , wherein the precursor container comprises an outlet arranged to the second volume for discharging a mixture of inert gas and precursor material from the second volume. 6. The precursor container of claim 2 , wherein the inlet or outlet comprises a valve. 7. The precursor container of claim 1 , further comprising an attached heating means arranged to heat the second volume. 8. The precursor container of claim 7 , wherein the heating means is arranged to heat the second volume to a temperature which is higher than the temperature in the first volume during a pulsing stage. 9. The precursor container of claim 1 , wherein first chamber is of material of low thermal conductivity and the second chamber is of material of high thermal conductivity as compared with the material of the first chamber. 10. The precursor container of claim 1 , further comprising means for increasing vaporization arranged or attached to the second volume, the means comprising an ultrasound source, an infra-red source or a microwave source.
Assignees
Inventors
Classifications
- C23C16/45544Primary
characterized by the apparatus · CPC title
Premixing before introduction in the reaction chamber · CPC title
Gas plumbing upstream of the reaction chamber · CPC title
- C23C16/4483Primary
using a porous body · CPC title
- C23C16/448Primary
characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials · CPC title
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- What does patent US11873558B2 cover?
- Precursor container, comprising a first volume formed by a first chamber to house precursor material, a second volume formed by a second chamber and separated from the first volume by a partition wall, and a conduit passing through the partition wall and extending from the first volume to the second volume providing the precursor material housed within the first volume with a route to the secon…
- Who is the assignee on this patent?
- Picosun Oy
- What technology area does this patent fall under?
- Primary CPC classification C23C16/45544. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jan 16 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).