Chip bonding apparatus and method of manufacturing semiconductor device using the apparatus

Patent metadata

Field	Value
Publication number	US-11837573-B2
Application number	US-202117166805-A
Country	US
Kind code	B2
Filing date	Feb 3, 2021
Priority date	Jun 19, 2020
Publication date	Dec 5, 2023
Grant date	Dec 5, 2023

Abstract

A chip bonding apparatus includes: a bonding contact configured to apply a bonding force to a semiconductor chip disposed on a substrate, the bonding contact having a first surface configured to face the semiconductor chip and a second surface opposite the first surface, the bonding contact including a protruding portion on the first surface, the protruding portion configured to contact the semiconductor chip, the bonding contact including a cavity formed in a region vertically overlapping the protruding portion, a heater disposed to be in contact with the second surface of the bonding contact to cover the cavity, and configured to heat the bonding contact, a bonding head disposed above the heater and configured to transmit the bonding force, and a partition wall structure protruding from a bottom surface of the cavity to partition an inner space of the cavity.

First claim

What is claimed is:

1. A chip bonding apparatus, comprising:
a bonding contact configured to apply a bonding force to a semiconductor chip disposed on a substrate, the bonding contact having a first surface configured to face the semiconductor chip and a second surface opposite the first surface, the bonding contact including a protruding portion on the first surface, the protruding portion configured to contact the semiconductor chip, the bonding contact including a cavity formed in a region vertically overlapping the protruding portion;
a heater disposed to be in contact with the second surface of the bonding contact to cover the cavity, and configured to heat the bonding contact;
a bonding head disposed above the heater and configured to transmit the bonding force; and
a partition wall structure protruding from a bottom surface of the cavity to partition an inner space of the cavity,
wherein an upper surface of the partition wall structure is at a lower level than that of the second surface of the bonding contact,
wherein the cavity has a depth of 0.5 mm to 1.5 mm, and
the partition wall structure is at a level of 0.2 mm to 0.5 mm lower than the second surface of the bonding contact.

2. The chip bonding apparatus of claim 1 ,
wherein the partition wall structure has a cross or lattice shape, each partition wall of the partition wall structure connecting a pair of sidewalls facing each other.

3. The chip bonding apparatus of claim 1 , wherein the cavity has an area smaller than that of the protruding portion in a plan view.

4. The chip bonding apparatus of claim 1 , wherein the bottom surface of the cavity is formed of any one of a flat surface, an inclined surface, and a concave surface.

5. The chip bonding apparatus of claim 4 , wherein the inclined surface and the concave surface are inclined downwardly in a direction approaching a central region of the bottom surface of the cavity.

6. The chip bonding apparatus of claim 1 , wherein at least one of air, nitrogen gas, and argon gas is filled in the cavity.

7. The chip bonding apparatus of claim 1 , further comprising a through-hole penetrating through the bonding head and the heater and connected to the cavity; and
a pressure supply connected to the through-hole, the pressure supply configured to adjust pressure inside the cavity.

8. A chip bonding apparatus, comprising:
a bonding tool configured to contact an object to be bonded and having a surface having a first region in which a cavity is formed and a second region disposed at a periphery of the first region;
a heater disposed to be in contact with the surface to cover the cavity of the bonding tool and configured to heat the bonding tool; and
a partition wall structure protruding from a bottom surface of the cavity to partition an internal space of the cavity into a plurality of regions, the partition wall structure positioned at a lower level than the surface,
wherein the cavity is closed from outside by bottom and side portions of a body portion that forms the bonding tool,
wherein the bonding tool comprises a protruding portion protruding downwards and configured to contact the object to be bonded,
wherein the cavity has a depth of 0.5 mm to 1.5 mm, and
wherein the partition wall structure is at a level of 0.2 mm to 0.5 mm lower than the surface of the bonding tool.

9. The chip bonding apparatus of claim 8 ,
wherein a depth of the cavity is greater than a thickness, in a vertical direction, of an edge of the body portion.

10. The chip bonding apparatus of claim 8 , wherein the partition wall structure is formed in a rotationally symmetrical manner with respect to the center of the cavity.

11. The chip bonding apparatus of claim 1 , wherein a vertical distance between the bottom surface of the protruding portion and the bottom surface of the cavity is less than a vertical distance between the bottom surface of the cavity and the second surface of the bonding contact.

12. The chip bonding apparatus of claim 1 , wherein the cavity has a shape corresponding to a shape of the protruding portion.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Junhyung
• Lee Joongha
• Park Sangha
• KIM SungHyup
• Lim Kyeongbin

Classifications

• H10W99/00 Primary

  Subject matter not provided for in other groups of this subclass · CPC title

• H10W72/07152

  Means for cooling · CPC title

• H10W72/07141

  Means for applying energy, e.g. ovens or lasers · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title