Workpiece processing apparatus with plasma and thermal processing systems

Patent metadata

Field	Value
Publication number	US-11837447-B2
Application number	US-202117242383-A
Country	US
Kind code	B2
Filing date	Apr 28, 2021
Priority date	Dec 14, 2020
Publication date	Dec 5, 2023
Grant date	Dec 5, 2023

Abstract

An apparatus for combining plasma processing and thermal processing of a workpiece is presented. The apparatus includes a processing chamber, a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber, and a plasma source configured to generate a plasma in the plasma chamber. A quartz workpiece support is disposed within the processing chamber, the workpiece support configured to support a workpiece. One or more radiative heat sources configured to heat the workpiece are disposed on a second and opposite side of the first side of the processing chamber. A dielectric window is disposed between the workpiece support and the one or more heat sources. In addition, the apparatus includes a temperature measurement system configured to obtain a temperature measurement indicative of a temperature of the workpiece.

First claim

What is claimed is:

1. A processing apparatus for processing a workpiece, the workpiece having a top side and a back side opposite from the top side, the processing apparatus comprising:
a processing chamber;
a plasma chamber separated from the processing chamber disposed on a first side of the processing chamber;
a gas delivery system configured to deliver one or more process gases to the plasma chamber;
a plasma source configured to generate a plasma from the one or more process gases in the plasma chamber;
a workpiece support disposed within the processing chamber, the workpiece support configured to support a workpiece, the workpiece support comprising quartz, wherein the back side of the workpiece faces the workpiece support;
one or more radiative heating sources configured on a second and opposite side of the first side of the processing chamber, the one or more radiative heating sources configured to heat the workpiece from the back side of the workpiece;
a dielectric window disposed between the workpiece support and the one or more radiative heating sources;
a workpiece temperature measurement system configured at a temperature measurement wavelength range to obtain a temperature measurement indicative of a temperature of the back side of the workpiece; and
a workpiece temperature control system configured to control power supply to the radiative heating sources.

2. The processing apparatus of claim 1 , wherein the plasma source is an inductively-coupled plasma source.

3. The processing apparatus of claim 2 , wherein a grounded Faraday shield is disposed between the inductively-coupled plasma source and the plasma chamber.

4. The processing apparatus of claim 1 , wherein the plasma chamber and processing chamber are separated via one or more separation grids.

5. The processing apparatus of claim 4 , wherein the one or more separation grids comprise one or more cooling channels disposed therein.

6. The processing apparatus of claim 4 , further comprising one or more gas injection ports configured to inject gas between one or more separation grids.

7. The processing apparatus of claim 4 , wherein the one or more separation grids are disposed such that the plasma can be filtered to create a filtered mixture in the processing chamber such that the top side of the workpiece can be exposed to the filtered mixture.

8. The processing apparatus of claim 1 , wherein the dielectric window comprises quartz.

9. The processing apparatus of claim 1 , wherein the dielectric window comprises one or more transparent regions that are transparent to at least a portion of radiation within the temperature measurement wavelength range and one or more opaque regions that are opaque to the portion of radiation within the temperature measurement wavelength range, wherein the one or more opaque regions are configured to block at least a portion of the broadband radiation emitted by the radiative heating sources within the temperature measurement wavelength range.

10. The processing apparatus of claim 9 , wherein the dielectric window comprises quartz, and the one or more opaque regions comprise a higher level of hydroxyl (OH) groups than the one or more transparent regions.

11. The processing apparatus of claim 1 , wherein the temperature measurement wavelength range comprises 2.7 micrometers.

12. The processing apparatus of claim 1 , comprising a rotation system including a rotation shaft passing through the dielectric window, the rotation shaft configured to rotate the workpiece support in the processing chamber.

13. The processing apparatus of claim 12 , wherein a first portion of the rotation shaft is disposed in the processing chamber and a second portion of the rotation shaft is disposed outside the processing chamber such that a vacuum pressure can be maintained in the processing chamber.

14. The processing apparatus of claim 1 , further comprising a pumping plate disposed around the workpiece, the pumping plate comprising one or more channels for directing a flow of gas through the processing chamber.

15. The processing apparatus of claim 1 , wherein the one or more radiative heating sources are configured to emit broadband radiation to heat the workpiece.

16. The processing apparatus of claim 1 , wherein the one or more radiative heating sources are configured to emit a monochromatic radiation at a heating wavelength range, wherein the heating wavelength range is different from the temperature measurement wavelength range.

17. The processing apparatus of claim 1 , wherein the workpiece temperature measurement system is configured to obtain a reflectance measurement of the workpiece.

18. The processing apparatus of claim 17 , wherein the workpiece temperature measurement system comprises:
one or more emitters configured to emit a calibration radiation within the temperature measurement wavelength range; and
one or more sensors, wherein at least a portion of the calibration radiation emitted from the one or more emitters is reflected by the workpiece and collected by the one or more sensors.

19. The processing apparatus of claim 18 , wherein the emitter emits the calibration radiation onto the workpiece with a modulation in intensity.

20. The processing apparatus of claim 1 , wherein the temperature measurement system comprises a first pyrometer and a second pyrometer, wherein the first pyrometer is disposed so as to take the temperature measurement of the workpiece about a center of the workpiece and the second pyrometer is disposed so as to take the temperature measurement of the workpiece about a perimeter of the workpiece.

Assignees

• Beijing E Town Semiconductor Tech Co Ltd
• Mattson Tech Inc

Inventors

• Desai Dixit
• Wansidler Alex
• Hezler Dieter
• Cibere Joseph
• Bremensdorfer Rolf
• Lembesis Pete
• Yang Michael

Classifications

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H01J37/3244

  Gas supply means · CPC title

• H01J37/32834

  Exhausting · CPC title

• H01J37/32724 Primary

  Temperature · CPC title