Systems and methods for homogenous intermixing of precursors in alloy atomic layer deposition

Patent metadata

Field	Value
Publication number	US-11827976-B2
Application number	US-201816954255-A
Country	US
Kind code	B2
Filing date	Dec 6, 2018
Priority date	Dec 20, 2017
Publication date	Nov 28, 2023
Grant date	Nov 28, 2023

Abstract

A method includes arranging a substrate in a processing chamber, and exposing the substrate to a gas mixture including a first metal precursor gas and a second metal precursor gas to deposit a first metal precursor and a second metal precursor onto the substrate at the same time. The method further includes purging the processing chamber, supplying a reactant common to both the first metal precursor and the second metal precursor to form a layer of an alloy on the substrate, and purging the processing chamber.

First claim

What is claimed is:

1. A substrate processing system comprising:
a chamber for processing a semiconductor substrate;
a substrate support arranged in the chamber to support the semiconductor substrate during processing;
a gas distribution device arranged in the chamber, the gas distribution device comprising a plurality of plenums, the plenums being disjoint from each other and configured to respectively supply into the chamber a first metal precursor gas, a second metal precursor gas, and a reactant via through holes in the respective plenums without intermixing the first metal precursor gas, the second metal precursor gas, and the reactant in the plenums, the plurality of plenums being stacked in a sequential order in an axial direction relative to the semiconductor substrate, each plenum of the plurality of plenums extending radially fully across the semiconductor substrate, and the through holes of the respective plenums being arranged in a radial direction that is perpendicular to the axial direction in the same sequential order as the sequential order of the plenums, the through holes of the plenums opening along a flat surface at a bottom of the gas distribution device, the flat surface extending radially fully across the bottom of the gas distribution device; and
a controller coupled to the chamber to:
expose the semiconductor substrate to a gas mixture including the first metal precursor gas and the second metal precursor gas to deposit a first metal precursor and a second metal precursor onto the semiconductor substrate at the same time;
purge the chamber;
supply the reactant to form a layer of an alloy on the semiconductor substrate; and
purge the chamber.

2. The substrate processing system of claim 1 wherein the controller is configured to control the supply of the first metal precursor gas and the second metal precursor gas from the plurality of plenums to provide a uniform distribution of the first metal precursor and the second metal precursor on the semiconductor substrate.

3. The substrate processing system of claim 1 wherein the controller is configured to at least one of:
supply the first metal precursor gas and the second metal precursor gas at a predetermined ratio; and
vary flow rates of the first metal precursor gas and the second metal precursor gas to vary a metal composition of the alloy.

4. The substrate processing system of claim 1 wherein the controller is configured to repeat a sequence of supplying the first metal precursor gas and the second metal precursor gas, purging the chamber, supplying the reactant, and purging the chamber until a predetermined thickness of the alloy is deposited on the semiconductor substrate.

5. The substrate processing system of claim 1 wherein the controller is configured to:
supply the first metal precursor gas and the second metal precursor gas at a predetermined ratio; and
repeat a sequence of supplying the first metal precursor gas and the second metal precursor gas, purging the chamber, supplying the reactant, and purging the chamber; and
vary the predetermined ratio when repeating the sequence.

6. The substrate processing system of claim 1 wherein the reactant is common to both the first metal precursor and the second metal precursor.

7. The substrate processing system of claim 1 wherein the reactant is for the first metal precursor, and wherein the controller is configured to supply a second reactant for the second metal precursor through one of the plenums used to supply the reactant.

8. The substrate processing system of claim 7 wherein the controller is configured to:
supplying the second reactant after performing the purging following the supply of the reactant; and
purging the chamber.

9. The substrate processing system of claim 8 wherein the controller is configured to repeat a sequence of supplying the gas mixture, purging the chamber, supplying the reactant, purging the chamber, supplying the second reactant, and purging the chamber until a predetermined thickness of the alloy is deposited on the semiconductor substrate.

10. The substrate processing system of claim 8 wherein the controller is configured to:
supply the first metal precursor gas and the second metal precursor gas at a predetermined ratio;
repeat a sequence of supplying the first metal precursor gas and the second metal precursor gas, purging the chamber, supplying the reactant, purging the chamber, supplying the second reactant, and purging the chamber; and
varying the predetermined ratio when repeating the sequence.

11. The substrate processing system of claim 1 wherein the through holes of the plenums are uniformly arranged in a radial and/or azimuthal direction.

12. The substrate processing system of claim 1 wherein the controller is configured to:
select a parameter for operating the chamber prior to supplying the first metal precursor gas and the second metal precursor gas; and
alter the parameter to vary a metal composition of the alloy.

13. The substrate processing system of claim 1 wherein the reactant is for the first metal precursor, and wherein the controller is configured to supply a second reactant for the second metal precursor through a different plenum than the plenum used to supply the reactant.

Assignees

• Lam Res Corp

Inventors

• Fisher Ilanit
• Humayun Raashina
• Danek Michal
• Van Cleemput Patrick
• Thombare Shruti

Classifications

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/032

  of conductive barrier, adhesion or liner layers · CPC title

• H10P14/432

  using selective deposition · CPC title

• C23C16/4408

  by purging residual gases from the reaction chamber or gas lines · CPC title