Bevel portion treatment agent composition and method of manufacturing wafer

Patent metadata

Field	Value
Publication number	US-11817310-B2
Application number	US-201917295739-A
Country	US
Kind code	B2
Filing date	Oct 21, 2019
Priority date	Nov 22, 2018
Publication date	Nov 14, 2023
Grant date	Nov 14, 2023

Abstract

A bevel portion treatment agent composition of the present invention is a bevel portion treatment agent composition containing a silylating agent, which is used for treating a bevel portion of a wafer, in which a surface modification index Y and a surface modification index Z measured by a predetermined procedure have a characteristic of satisfying 0.5≤Y/Z≤1.0.

First claim

The invention claimed is:

1. A method of manufacturing a wafer having a bevel portion, comprising:
a wafer surface modification step; and
a wafer processing step, wherein
the wafer processing step includes at least one step selected from the group consisting of a step of forming a fine pattern having an uneven shape in the element forming region on the wafer, a step of dicing or grinding the wafer, a step of forming an insulating film and/or a metal film, and a step of cleaning the wafer, and
the wafer surface modification step is performed before and after the wafer processing step and between each of a plurality of steps during the processing step
in the surface modification step, a bevel portion treatment agent composition which is useful for treating a bevel portion of a wafer is applied to the bevel portion, the composition comprising:

a silylating agent,
wherein the composition has properties such that a surface modification index Y and a surface modification index Z as measured in the following procedures (1) to (4) satisfy 0.5≤Y/Z≤1.0,
(1) a substrate having a silicon oxide film (SiO 2 film) having a thickness of 1 μm on a surface is treated with the bevel portion treatment agent composition, under treatment conditions of: the substrate is immersed in 1% by mass of a hydrofluoric acid aqueous solution at room temperature for 10 minutes, subsequently, immersed in pure water for 1 minute, and in 2-propanol (iPA) for 1 minute, subsequently, immersed in the bevel portion treatment agent composition at 25° C. for 1 minute, subsequently, immersed in iPA for 1 minute, finally the substrate was removed from the iPA, and air is blown to remove the iPA on the surface of the substrate,
(2) a critical surface tension of the silicon oxide film after the treatment (1) is obtained by a Zisman plot method using a plurality of measuring liquids having different mixing ratios of water and iPA, and a value of the obtained critical surface tension (mN/m) is defined as the “surface modification index Y”,
(3) a substrate having a silicon nitride film (SiN film) having a thickness of 50 nm on a surface is treated with the bevel portion treatment agent composition, under treatment conditions of: the substrate is immersed in 1% by mass of a hydrofluoric acid aqueous solution at room temperature for 10 minutes, subsequently, immersed in pure water for 1 minute, and in iPA for 1 minute, subsequently, immersed in the bevel portion treatment agent composition at 25° C. for 1 minute, subsequently, immersed in iPA for 1 minute, finally, the substrate is removed from iPA, and air is blown to remove iPA on the surface of the substrate, and
(4) a critical surface tension of the silicon nitride film after the treatment (3) is obtained by the Zisman plot method using a plurality of measuring liquids having different mixing ratios of water and iPA, and an obtained value (mN/m) of the critical surface tension is defined as the “surface modification index Z”.

2. The method of manufacturing the wafer according to claim 1 , wherein the insulating film is a heterogenous film that is exposed on the surface of the bevel portion in a state where a plurality of heterogenous materials is mixed.

3. The method of manufacturing the wafer according to claim 1 , wherein the insulating film includes a silicon oxide film and a silicon nitride film.

4. The method of manufacturing the wafer according to claim 1 , wherein in the wafer surface modification step, the bevel portion treatment agent composition is used within 30 minutes after its preparation.

5. The method of manufacturing the wafer according to claim 1 , wherein in the wafer surface modification step, the bevel portion treatment agent composition is prepared at a liquid temperature of 25° C.

Assignees

• Central Glass Co Ltd

Inventors

• Fukui Yuki
• Okumura Yuzo
• Terui Yoshiharu
• Kumon Soichi

Classifications

• H10P70/54

  Cleaning of wafer edges · CPC title

• H10P14/6528

  In-situ cleaning after layer formation, e.g. removing process residues · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H01L21/02057 Primary

  Electricity · mapped topic