Semiconductor element bonding structure, method for producing semiconductor element bonding structure, and electrically conductive bonding agent

Patent metadata

Field	Value
Publication number	US-11810885-B2
Application number	US-202117187452-A
Country	US
Kind code	B2
Filing date	Feb 26, 2021
Priority date	Aug 31, 2018
Publication date	Nov 7, 2023
Grant date	Nov 7, 2023

Abstract

A semiconductor element bonding structure capable of strongly bonding a semiconductor element and an object to be bonded and relaxing thermal stress caused by a difference in thermal expansion, by interposing metal particles and Ni between the semiconductor element and the object to be bonded, the metal particles having a lower hardness than Ni and having a micro-sized particle diameter. A plurality of metal particles 5 (aluminum (Al), for example) having a lower hardness than nickel (Ni) and having a micro-sized particle diameter are interposed between a semiconductor chip 3 and a substrate 2 to be bonded to the semiconductor chip 3 , and the metal particles 5 are fixedly bonded by the nickel (Ni). Optionally, aluminum (Al) or an aluminum alloy (Al alloy) is used as the metal particles 5 , and aluminum (Al) or an aluminum alloy (Al alloy) is used on the surface of the semiconductor chip 3 and/or the surface of the substrate 2.

First claim

What is claimed is:

1. A semiconductor element bonding structure comprising:
a semiconductor element bonding layer in which a plurality of metal particles of a first metal are fixedly bonded by a second metal, wherein:
the first metal has a hardness lower than that of the second metal, a melting point equal to or lower than that of the second metal, and a particle diameter of a micro size;
the plurality of metal particles of the first metal are interposed between a semiconductor element and an object that is bonded to the semiconductor element;
the first metal is aluminum (Al) or an aluminum alloy (Al alloy) and the second metal is nickel (Ni); and
a volume ratio of the plurality of metal particles of the first metal ranges from 50% to 90% of a total volume of the plurality of metal particles of the first metal and the second metal.

2. The semiconductor element bonding structure according to claim 1 , wherein: the particle diameter of the metal particles of the first metal is larger than 0.5 μm and smaller than or equal to 500 μm.

3. The semiconductor element bonding structure according to claim 1 , wherein: the semiconductor element bonding layer has a thickness ranging from 3 μm to 800 μm.

4. A method for producing a semiconductor element bonding structure according to claim 1 , the method comprising:
interposing the plurality of metal particles of the first metal between the semiconductor element and the object to be bonded;
circulating a plating solution in a gap formed between the metal particles of the first metal; and
precipitating the second metal by a plating process, whereby the metal particles of the first metal are fixedly bonded to the semiconductor element bonding layer.

5. A method for producing a semiconductor element bonding structure according to claim 1 , the method comprising:
heating a mixture of metal particles of the second metal and the metal particles of the first metal at a temperature of 200° C. or higher, the metal particles of the second metal having a particle diameter ranging from 5 nm to 500 nm and a particle diameter of 1/10 or less than that of the metal particles of the first metal; and
fixedly bonding the metal particles of the first metal by a sintered body of the metal particles of the second metal to the semiconductor element bonding layer.

6. An electrically conductive bonding agent comprising:
a mixture of nickel (Ni) particles containing nano-sized nickel (Ni) and metal particles having a hardness lower than that of nickel (Ni) and having a particle diameter of micro size,
wherein a volume ratio of the metal particles ranges from 50% to 90% of a total volume of the metal particles and the nickel (Ni) particles.

7. The electrically conductive bonding agent of claim 6 , further comprising a solvent and a binder.

8. The electrically conductive bonding agent of claim 6 , wherein the metal particles are aluminum (Al) particles or aluminum alloy (Al alloy) particles.

9. The electrically conductive bonding agent of claim 6 , wherein the particle diameter of the metal particles is larger than 0.5 μm and smaller than or equal to 500 μm.

Assignees

• Univ Waseda

Inventors

• Tatsumi Kohei
• Tanaka Yasunori

Classifications

• H10W72/59

  Bond pads specially adapted therefor · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/07341

  Controlling the bonding environment, e.g. atmosphere composition or temperature · CPC title

• H10W72/07331

  Connecting techniques · CPC title