Systems for integrated decomposition and scanning of a semiconducting wafer

US11804390B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11804390-B2
Application numberUS-202117562411-A
CountryUS
Kind codeB2
Filing dateDec 27, 2021
Priority dateDec 1, 2017
Publication dateOct 31, 2023
Grant dateOct 31, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

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Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

First claim

Opening claim text (preview).

What is claimed is: 1. A nozzle system for scanning a surface of a material comprising: a nozzle including a nozzle body defining a first fluid port in fluid communication with a first nozzle port, and defining a second nozzle port in fluid communication with a second fluid port, the nozzle body configured to receive a fluid through the first fluid port and direct the fluid through the first nozzle port to introduce the fluid to a surface of a material, and a nozzle hood extending from the nozzle body adjacent the first nozzle port and the second nozzle port and defining a channel disposed between the first nozzle port and the second nozzle port, the nozzle hood configured to direct the fluid from the first nozzle port to the second nozzle port along the surface of the material; and a nozzle housing including a housing body defining an interior portion and an aperture through which at least a portion of the nozzle can pass when transitioning between an extended position and a retracted position. 2. The nozzle system of claim 1 , wherein the nozzle housing further includes a sensor positioned at least partially within the interior portion, the sensor configured to measure the presence or absence of fluid passing through a fluid line coupled to the first fluid port or the second fluid port. 3. The nozzle system of claim 1 , wherein the nozzle is moveably coupled to the nozzle housing via a coupler. 4. The nozzle system of claim 3 , wherein the coupler defines an aperture, and wherein the nozzle housing includes a protrusion extending through the aperture. 5. The nozzle system of claim 4 , wherein a top portion of the aperture rests on a portion of the protrusion when the nozzle is in the extended position. 6. The nozzle system of claim 4 , wherein the nozzle housing further includes a lock structure configured to interact with the coupler to hold the nozzle in the retracted position. 7. The nozzle system of claim 6 , wherein the lock structure includes an electromagnet. 8. The nozzle system of claim 6 , wherein the protrusion does not support the aperture when the nozzle is in the retracted position. 9. The nozzle system of claim 1 , wherein the channel is an elongated channel having opposing rounded ends defined by the nozzle hood. 10. The nozzle system of claim 9 , wherein the first nozzle port is positioned tangent to an edge of a first rounded edge of the elongated channel, and wherein the second nozzle port is positioned at a center of a second rounded edge of the elongated channel distal to the first nozzle port. 11. The nozzle system of claim 1 , wherein the channel has a length of approximately a radius of the surface of the material. 12. A nozzle for scanning a surface of a material comprising: a nozzle body defining a fluid port in fluid communication with a nozzle port, the nozzle body configured to receive a fluid through the fluid port and direct the fluid through the nozzle port to introduce the fluid to a surface of a material; and a nozzle hood extending from the nozzle body adjacent the nozzle port and configured to translate longitudinally across the surface of the material, the nozzle hood defining a channel disposed along a longitudinal portion of the nozzle hood at least partially between the nozzle port and an end of the longitudinal portion of the nozzle hood distal the nozzle port, the nozzle hood configured to direct the fluid from the nozzle port to the end of the longitudinal portion along the surface of the material. 13. The nozzle of claim 12 , wherein the nozzle body includes opposing side walls, each of the opposing side walls including a tapered portion coupled to a vertical side wall. 14. The nozzle of claim 13 , wherein each vertical side wall defines at least a portion of the nozzle hood. 15. The nozzle of claim 12 , wherein the channel is an elongated channel having opposing rounded ends defined by the nozzle hood. 16. The nozzle of claim 15 , wherein the nozzle port is positioned tangent to an edge of a first rounded edge of the elongated channel. 17. The nozzle of claim 12 , wherein the channel has a length of approximately a radius of the surface of the material. 18. The nozzle of claim 12 , wherein the channel has a volume of up to approximately 300 μL. 19. The nozzle of claim 12 , wherein the nozzle body comprises at least one of chlorotrifluoroethylene (CTFE) or polytetrafluoroethylene (PTFE). 20. The nozzle of claim 12 , wherein the material is a semiconducting wafer.

Assignees

Inventors

Classifications

  • Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

  • Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers · CPC title

  • Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title

  • involving removal of lid, door or cover · CPC title

  • Horizontal transfer of a single workpiece · CPC title

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Frequently asked questions

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What does patent US11804390B2 cover?
Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.
Who is the assignee on this patent?
Elemental Scientific Inc
What technology area does this patent fall under?
Primary CPC classification H10P72/0414. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 31 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 11 related publications on this page (citations in our corpus or others sharing the same primary CPC).