Gate cut and fin trim isolation for advanced integrated circuit structure fabrication

Patent metadata

Field	Value
Publication number	US-11799015-B2
Application number	US-202217703884-A
Country	US
Kind code	B2
Filing date	Mar 24, 2022
Priority date	Nov 30, 2017
Publication date	Oct 24, 2023
Grant date	Oct 24, 2023

Abstract

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, a method includes forming a plurality of fins and forming a plurality of gate structures over the plurality of fins. A dielectric material structure is formed between adjacent ones of the plurality of gate structures. A portion of a first of the plurality of gate structures is removed to expose a first portion of each of the plurality of fins, and a portion of a second of the plurality of gate structures is removed to expose a second portion of each of the plurality of fins. The exposed first portion of each of the plurality of fins is removed, but the exposed second portion of each of the plurality of fins is not removed.

First claim

What is claimed is:

1. An integrated circuit structure, comprising:
a plurality of three-dimensional bodies, individual ones of the plurality of three-dimensional bodies along a first direction;
an isolation structure over the plurality of three-dimensional bodies, the isolation structure having a longest dimension along a second direction between a first end and a second end, the second direction orthogonal to the first direction;
a first gate structure at the first end of the isolation structure, the first gate structure having a top surface co-planar with a top surface of the isolation structure;
a second gate structure at the second end of the isolation structure, the second gate structure having a top surface co-planar with the top surface of the isolation structure, wherein the isolation structure completely physically separates the second gate structure from the first gate structure; and
a third gate structure laterally spaced apart from the first gate structure and the second gate structure, the third gate structure comprising a gate electrode completely surrounding a channel region of each of the three-dimensional bodies.

2. The integrated circuit structure of claim 1 , further comprising:
a dielectric material structure over the plurality of three-dimensional bodies and adjacent to the isolation structure, wherein the dielectric material structure is distinct from the isolation structure.

3. The integrated circuit structure of claim 2 , wherein the dielectric material structure has a top surface co-planar with the top surface of the isolation structure.

4. The integrated circuit structure of claim 2 , wherein the dielectric material structure differs in composition from the isolation structure.

5. The integrated circuit structure of claim 1 , wherein each of the first gate structure and the second gate structure comprises a gate electrode on and between sidewalls of a high-k gate dielectric layer.

6. The integrated circuit structure of claim 5 , wherein each of the first gate structure and the second gate structure further comprises an insulating cap on the gate electrode and on and the sidewalls of the high-k gate dielectric layer.

7. The integrated circuit structure of claim 1 , wherein the plurality of three-dimensional bodies is a plurality of silicon three-dimensional bodies.

8. The integrated circuit structure of claim 1 , wherein the isolation structure is on a shallow trench isolation (STI) structure between individual ones of the plurality of three-dimensional bodies.

9. An integrated circuit structure, comprising:
a plurality of three-dimensional bodies, individual ones of the plurality of three-dimensional bodies along a first direction;
an isolation structure over the plurality of three-dimensional bodies, the isolation structure having a longest dimension along a second direction orthogonal to the first direction, the isolation structure having a first side and a second side opposite the first side along the first direction;
a first gate structure at a first end of the isolation structure, the first gate structure having a top surface co-planar with a top surface of the isolation structure;
a second gate structure at a second end of the isolation structure, the second end opposite the first end, the second gate structure having a top surface co-planar with the top surface of the isolation structure, wherein the isolation structure completely physically separates the second gate structure from the first gate structure;
a third gate structure laterally spaced apart from the first gate structure and the second gate structure, the third gate structure comprising a gate electrode completely surrounding a channel region of each of the three-dimensional bodies;
a first dielectric material structure over the plurality of three-dimensional bodies and adjacent to the first side of the isolation structure, wherein the first dielectric material structure is distinct from the isolation structure; and
a second dielectric material structure over the plurality of three-dimensional bodies and adjacent to the second side of the isolation structure, wherein the second dielectric material structure is distinct from the isolation structure.

10. The integrated circuit structure of claim 9 , wherein the first dielectric material structure has a top surface co-planar with the top surface of the isolation structure, and the second dielectric material structure has a top surface co-planar with the top surface of the isolation structure.

11. The integrated circuit structure of claim 9 , wherein the first and second dielectric material structures differ in composition from the isolation structure.

12. The integrated circuit structure of claim 9 , wherein the plurality of three-dimensional bodies is a plurality of silicon three-dimensional bodies.

13. The integrated circuit structure of claim 9 , wherein the isolation structure is on a shallow trench isolation (STI) structure between individual ones of the plurality of three-dimensional bodies.

14. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a plurality of three-dimensional bodies, individual ones of the plurality of three-dimensional bodies along a first direction;
an isolation structure over the plurality of three-dimensional bodies, the isolation structure having a longest dimension along a second direction between a first end and a second end, the second direction orthogonal to the first direction;
a first gate structure at the first end of the isolation structure, the first gate structure having a top surface co-planar with a top surface of the isolation structure;
a second gate structure at the second end of the isolation structure, the second gate structure having a top surface co-planar with the top surface of the isolation structure, wherein the isolation structure completely physically separates the second gate structure from the first gate structure; and
a third gate structure laterally spaced apart from the first gate structure and the second gate structure, the third gate structure comprising a gate electrode completely surrounding a channel region of each of the three-dimensional bodies.

15. The computing device of claim 14 , further comprising:
a memory coupled to the board.

16. The computing device of claim 14 , wherein the component is a packaged integrated circuit die.

17. The computing device of claim 13 , wherein the component is selected from the group consisting of a processor, a communications chip, and a digital signal processor.

18. A computing device, comprising:
a board; and
a component coupled to the board, the component including an integrated circuit structure, comprising:
a plurality of three-dimensional bodies, individual ones of the plurality of three-dimensional bodies along a first direction;
an isolation structure over the plurality of three-dimensional bodies, the isolation structure having a longest dimension along a second direction orthogonal to the first direction, the isolation structure having a first side and a second side opposite the first side along the first direction;
a first gate structure at a first end of the isolation structure, the first gate structure having a top surface co-planar with a top surface of the isolation structure;
a second gate structure at a second end of the isolation structure, the second end opposite the first end, the second gate structure having a top surface co-planar with the top surface of the isolation stru

Assignees

• Intel Corp

Inventors

• Ghani Tahir
• Ho Byron
• Hattendorf Michael L
• Auth Christopher P

Classifications

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10W20/0693

  by forming self-aligned vias · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/4403

  based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title