Overlay and Semiconductor Process Control Using a Wafer Geometry Metric
US-2016372353-A1 · Dec 22, 2016 · US
US11788833B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11788833-B2 |
| Application number | US-202016888235-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 29, 2020 |
| Priority date | Apr 17, 2015 |
| Publication date | Oct 17, 2023 |
| Grant date | Oct 17, 2023 |
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Method and system for defining basis functions for fitting distortions of profiles of objects in a batch, that has undergone a fabrication process, in a manner adaptable to the fabrication process to reduce the errors between profiles approximated with the use of such basis functions and actual object profiles. Process-specific individual basis functions are defined based on spatially-dense measurement of objects from training sub-set of the batch and applying learning algorithm to results of such measurement. Advantages of process-adaptable basis functions over generic basis functions for fitting distortion shapes of objects include higher accuracy of fitting either at larger or a fewer locations across the object.
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What is claimed: 1. A method comprising: measuring multiple features on a set of workpieces to acquire measurement data; generating a set of functions, derived from the measurement data, that characterize distortions of the workpieces from the set, comprising: measuring distortion profiles at a plurality of spatial locations across a workpiece from the set of workpieces; defining, based on a Principal Component Analysis (PCA) technique, a set of distortion functions from the measured distortion profiles, wherein the set of distortion functions correspond with a set of weights, wherein one weight of the set of weights relates to a relative contribution of one corresponding distortion function of the set of distortion functions; and selecting a predetermined number of distortion functions from the set of distortion functions having a highest weight to obtain the set of functions; applying the set of functions to characterize distortions of one or more workpieces to be processed; and processing the one or more workpieces while compensating the distortion thereof using the set of functions. 2. A method according to claim 1 , further comprising processing the one or more workpieces while compensating for the characterization of the one or more workpieces. 3. A method according to claim 2 , wherein the processing the one or more workpieces includes bonding a workpiece from the one or more workpieces to an identified unit. 4. A method according to claim 2 , wherein the measuring the distortion profiles includes measuring a spatial profile of a workpiece from the set of workpieces, and wherein the applying the set of functions includes defining an approximated spatial profile of a workpiece. 5. A method according to claim 4 , wherein the measuring the distortion includes simultaneously measuring the workpiece with multiple sensors. 6. A method according to claim 1 , wherein the measuring the distortion profiles includes: with a shape-profiling tool and for each workpiece from the set of workpieces, measuring a corresponding spatial profile at M spatial locations across said workpiece to determine a measured spatial profile. 7. A system comprising: at least one of a lithographic exposure tool having an optical projection system and a workpiece bonding apparatus; a spatial profiling tool; programmable electronic circuitry in operable communication with at least one of the lithographic exposure tool and the spatial profiling tool; and tangible, non-transient storage memory in electronic communication with said circuitry, the memory having thereon program code configured to cause the circuitry to determine spatial profiles of a set of workpieces processed with the exposure tool by at least: determining a set of functions by assessing data representing the workpieces with a process analysis technique, comprising: measuring the spatial profiles at a plurality of spatial locations across a workpiece from the set of workpieces; defining, based on a Principal Component Analysis (PCA) technique, a set of distortion functions from the measured spatial profiles, wherein the spatial profiles correspond with a set of weights, wherein one weight of the set of weights relates to a relative contribution of one corresponding spatial profile of the spatial profiles; and selecting a predetermined number of spatial profiles from the spatial profiles having a highest weight to obtain the set of functions; applying the set of functions to characterize distortions of one or more workpieces to be processed; and processing the one or more workpieces while compensating the distortion thereof using the set of functions. 8. The system of claim 7 , wherein the workpiece bonding apparatus is further configured to bond first and second workpieces, approximated spatial profiles for which have been defined. 9. The system of claim 7 , wherein the lithographic exposure tool is configured to process the one or more workpieces while compensating for the characterization of the one or more workpieces. 10. The system of claim 9 , wherein the processing the one or more workpieces includes bonding a workpiece from the one or more workpieces to an identified unit. 11. The system of claim 9 , wherein the measuring the distortion profiles includes measuring a spatial profile of a workpiece from the set of workpieces, and wherein the applying the set of functions includes defining an approximated spatial profile of a workpiece. 12. The system of claim 11 , wherein the measuring the distortion includes simultaneously measuring the workpiece with multiple sensors. 13. The system of claim 7 , wherein the measuring the distortion profiles includes: with the spatial profiling tool and for each workpiece from the set of workpieces, measuring a corresponding spatial profile at M spatial locations across said workpiece to determine a measured spatial profile.
for measuring contours or curvatures · CPC title
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Alignment type or strategy, e.g. leveling, global alignment · CPC title
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