Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer
US-11788201-B2 · Oct 17, 2023 · US
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in the gaseous or vapour state
in the gaseous or vapour state · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B13/12 |
| Official title | in the gaseous or vapour state |
| Display label | in the gaseous or vapour state |
| Total patents | 4 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity appears stable based on the most recent years.
| Year | Patents |
|---|---|
| 2017 | 1 |
| 2019 | 1 |
| 2021 | 1 |
| 2023 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method for producing a single crystal from semiconductor material by the fz method; device for carrying out the method and semiconductor silicon wafer
US-2021222319-A1 · Jul 22, 2021 · US
Method for manufacturing a FZ silicon single crystal subject to additional gallium doping for solar cells
US-10487417-B2 · Nov 26, 2019 · US
Method for manufacturing fz silicon single crystal for solar cell and solar cell
US-2017350035-A1 · Dec 7, 2017 · US