Display apparatus and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11784190-B2
Application number	US-201916358020-A
Country	US
Kind code	B2
Filing date	Mar 19, 2019
Priority date	Jul 2, 2018
Publication date	Oct 10, 2023
Grant date	Oct 10, 2023

Abstract

A display apparatus includes a substrate, a first thin-film transistor including a first semiconductor layer on the substrate, and a first gate electrode on the first semiconductor layer, the first gate electrode being insulated from the first semiconductor layer by a first gate insulating layer, an organic interlayer insulating layer covering the first gate electrode, a first conductive layer on the organic interlayer insulating layer, a first contact hole exposing a top portion of the first semiconductor layer by penetrating through the organic interlayer insulating layer and the first gate insulating layer, and a first protruding portion protruding from a top surface of the substrate between the substrate and the first semiconductor layer, the first protruding portion corresponding to the first contact hole, wherein the first conductive layer contacts the first semiconductor layer through the first contact hole.

First claim

What is claimed is:

1. A display apparatus, comprising:
a substrate;
a first thin-film transistor including a first semiconductor layer on the substrate, and a first gate electrode on the first semiconductor layer, the first gate electrode being insulated from the first semiconductor layer by a first gate insulating layer;
an organic interlayer insulating layer covering the first gate electrode;
a first conductive layer on the organic interlayer insulating layer;
a first contact hole exposing a top portion of the first semiconductor layer by penetrating through the organic interlayer insulating layer and the first gate insulating layer;
a first protruding portion protruding from a top surface of the substrate between the substrate and the first semiconductor layer, the first protruding portion corresponding to the first contact hole;
a storage capacitor including a lower electrode spaced apart from the first gate electrode and directly disposed on a same layer as the first gate electrode, and an upper electrode overlapping the lower electrode, the upper electrode being insulated from the lower electrode by a second gate insulating layer; and
a second protruding portion protruding from the top surface of the substrate between the substrate and the lower electrode of the storage capacitor, the second protruding portion corresponding to the storage capacitor, wherein
the first conductive layer contacts the first semiconductor layer through the first contact hole,
a top portion of the organic interlayer insulating layer is flat,
the first semiconductor layer comprises a first region overlapping with the first protruding portion and a second region non-overlapping with the first protruding portion, and
a top surface of the first protruding portion is higher than a top surface of the second region of the first semiconductor layer.

2. The display apparatus as claimed in claim 1 , further comprising:
a second contact hole exposing a top portion of the lower electrode by penetrating through the organic interlayer insulating layer and the second gate insulating layer; and
a second conductive layer on the organic interlayer insulating layer, the second conductive layer contacting the lower electrode through the second contact hole, wherein the second protruding portion corresponds to the second contact hole.

3. The display apparatus as claimed in claim 2 , wherein:
the upper electrode includes a storage opening, and
the second contact hole is disposed inside the storage opening in plan view.

4. The display apparatus as claimed in claim 2 , further comprising a second thin-film transistor overlapping the storage capacitor.

5. The display apparatus as claimed in claim 1 , wherein:
the first protruding portion includes an organic material, and
a shape of the top surface of the first protruding portion is curved.

6. The display apparatus as claimed in claim 1 , wherein the first protruding portion includes at least one of an inorganic insulating material and a metal.

7. The display apparatus as claimed in claim 1 , wherein the organic interlayer insulating layer includes a photosensitive organic layer.

8. The display apparatus as claimed in claim 1 , further comprising a buffer layer on the substrate, wherein the first protruding portion is between the buffer layer and the first semiconductor layer.

9. The display apparatus as claimed in claim 1 , wherein:
the substrate includes a first resin layer, a first barrier layer, a second resin layer, and a second barrier layer, which are stacked sequentially,
the first and second resin layers include an organic material, and
the first and second barrier layers include an inorganic material.

10. The display apparatus as claimed in claim 1 , wherein a height of the first protruding portion from the top surface of the substrate is greater than a thickness of the first gate insulating layer.

11. The display apparatus as claimed in claim 1 , wherein the first protruding portion provides an increased area of the first semiconductor layer as compared to an equivalent substrate area having no protruding portion.

12. The display apparatus as claimed in claim 11 , wherein the second protruding provides an increased area of the lower electrode of the storage capacitor as compared to an equivalent substrate area having no protruding portion.

13. The display apparatus as claimed in claim 1 , wherein the second protruding portion does not overlap the upper electrode of the storage capacitor.

14. A display apparatus, comprising:
a substrate;
a thin-film transistor on the substrate, the thin-film transistor including a semiconductor layer and a gate electrode;
a storage capacitor on the substrate;
an organic interlayer insulating layer covering the gate electrode and the storage capacitor;
a conductive layer on the organic interlayer insulating layer;
a contact hole penetrating through the organic interlayer insulating layer and exposing the semiconductor layer or one electrode of the storage capacitor;
a protruding portion between the substrate and the organic interlayer insulating layer, the protruding portion corresponding to the contact hole; and
a buffer layer disposed between the semiconductor layer and the protruding portion, wherein
a thickness of the protruding portion is greater than a thickness of the buffer layer, and wherein a top portion of the organic interlayer insulating layer is flat,
the semiconductor layer comprises a first region overlapping with the protruding portion and a second region non-overlapping with the protruding portion, and
a top surface protruding portion is higher than a top surface of the second region of the semiconductor layer.

15. The display apparatus as claimed in claim 14 , wherein the organic interlayer insulating layer includes a photosensitive organic material.

16. The display apparatus as claimed in claim 14 , wherein:
the protruding portion includes an organic material, and
a shape of the top surface of the protruding portion is curved.

17. The display apparatus as claimed in claim 14 , wherein the protruding portion includes at least one of an inorganic insulating material and a metal.

18. The display apparatus as claimed in claim 14 , wherein a height of the protruding portion from a top surface of the substrate is greater than a total thickness of the semiconductor layer and the gate electrode.

19. The display apparatus as claimed in claim 14 , wherein the gate electrode is directly electrically connected to the storage capacitor.

Assignees

• Samsung Display Co Ltd

Inventors

• Son Sewan
• Ko Moosoon
• Park Youngwoo
• An Jinsung
• Woo Minwoo
• Yoon Juwon
• Lee Seongjun
• Lee Wangwoo
• Lee Jeongsoo
• Lee Jiseon
• Ji Deukmyung

Classifications

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D86/411 Primary

  characterised by materials, geometry or structure of the substrates · CPC title

• H10D30/6725

  having supplementary regions or layers for improving the flatness of the device · CPC title

• H10D30/6704

  having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device · CPC title

• H10D86/40 Primary

  characterised by multiple TFTs · CPC title