Thin film transistor and display device comprising the same

Patent metadata

Field	Value
Publication number	US-10192891-B2
Application number	US-201715459634-A
Country	US
Kind code	B2
Filing date	Mar 15, 2017
Priority date	Mar 16, 2016
Publication date	Jan 29, 2019
Grant date	Jan 29, 2019

Abstract

According to one embodiment, a thin film transistor includes an oxide semiconductor layer provided above an insulating substrate and including a channel region between a source region and a drain region, a first insulating film provided in a region on the oxide semiconductor layer, which corresponds to the channel region, a gate electrode provided on the first insulating film, a first protective film provided on the oxide semiconductor layer, the first insulating film and the gate electrode, as an insulating film containing a metal, a second protective film provided on the first protective film and a third protective film provided on the second protective film, as an insulating film containing a metal.

First claim

What is claimed is:

1. A thin film transistor comprising:
an oxide semiconductor layer provided above an insulating substrate and including a source region, a drain region and a channel region between the source region and the drain region;
a first insulating film provided in a region on the oxide semiconductor layer, which corresponds to the channel region;
a gate electrode provided on the first insulating film;
a first protective film provided on the oxide semiconductor layer, the first insulating film and the gate electrode, as an insulating film containing a metal;
a second protective film provided on the first protective film; and
a third protective film provided on the second protective film, as an insulating film containing a metal, wherein the first protective film directly contacts sidewalls and a top surface of the gate electrode, wherein the third protective film is thicker than the first protective film.

2. The thin film transistors of claim 1 , wherein
the first protective film and the third protective film are each formed of aluminum oxide.

3. The thin film transistor of claim 1 , wherein
the second protective film is formed of at least one of silicon oxide, silicon nitride or silicon oxynitride.

4. A display device comprising the thin film transistor of claim 1 .

5. The display device of claim 4 , comprising an organic electroluminescence element.

6. The display device of claim 4 , comprising a liquid crystal layer.

7. The thin film transistor of claim 1 , wherein a top surface of the third protective film over the source region is closer to a top surface of the insulating substrate than a top surface of the third protective film over the gate electrode.

Assignees

• Joled Inc

Inventors

• Murai Atsuhito
• Sato Eiichi
• Miura Masanori

Classifications

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• G02F1/1362

  Active matrix addressed cells {(G02F1/134336, G02F1/134363 take precedence)} · CPC title

• H10W20/47

  comprising two or more dielectric layers having different properties, e.g. different dielectric constants · CPC title

• H10W20/40

  Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes · CPC title

• H01L27/3258

  Electricity · mapped topic