Manufacturing method and structure of oxide semiconductor TFT substrate

Patent metadata

Field	Value
Publication number	US-9705008-B2
Application number	US-201414426152-A
Country	US
Kind code	B2
Filing date	Sep 19, 2014
Priority date	Sep 2, 2014
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

The present invention provides a manufacturing method and a structure of an oxide semiconductor TFT substrate, in which an oxide conductor layer is used to define a channel of an oxide semiconductor TFT substrate. Since the oxide conductor layer is relatively thin and compared to the known techniques, the width of the channel can be made smaller and the width of the channel can be controlled precisely, the difficult of the manufacturing process of the oxide semiconductor TFT substrate can be reduced and the performance of the oxide semiconductor TFT substrate can be enhanced and the yield rate of manufacture can be increased. In a structure of an oxide semiconductor TFT substrate manufactured with the present invention, since the oxide conductor layer and the oxide semiconductor layer are similar in structural composition, excellent ohmic contact can be formed; the oxide conductor does not cause metal ion contamination in the oxide semiconductor layer; and the oxide conductor layer is transparent so as to help increase aperture ratio.

First claim

What is claimed is:

1. A manufacturing method of an oxide semiconductor thin-film transistor (TFT) substrate, comprising the following steps:
Step 1: providing a substrate and depositing and patternizing an oxide conductor layer on the substrate to form an oxide conductor layer having a channel;
Step 2: depositing and patternizing an oxide semiconductor layer on the oxide conductor layer to form an oxide semiconductor layer;
Step 3: depositing a first insulation layer on the oxide semiconductor layer;
Step 4: depositing and patternizing a first metal layer on the first insulation layer to form a gate terminal;
Step 5: depositing a second insulation layer on the gate terminal;
Step 6: subjecting the first insulation layer and the second insulation layer simultaneously to a patternization operation to form vias; and
Step 7: forming a source terminal and a drain terminal on the second insulation layer.

2. The manufacturing method of an oxide semiconductor TFT substrate as claimed in claim 1 , wherein an operation of Step 7 comprises: depositing and patternizing a second metal layer on the second insulation layer, where the second metal layer fills up the vias and is electrically connected to the oxide semiconductor layer to form the drain terminal and the source terminal.

3. The manufacturing method of an oxide semiconductor TFT substrate as claimed in claim 1 , wherein an operation of Step 7 comprises:
Step 71 : depositing and patternizing a second metal layer on the second insulation layer, where the second metal layer fills up the via and is electrically connected to the oxide semiconductor layer to form the drain terminal; and
Step 72 : depositing and patternizing a second oxide conductor layer on the second insulation layer, where the second oxide conductor layer fills up the via and is electrically connected to the oxide semiconductor layer to form the source terminal.

4. The manufacturing method of an oxide semiconductor TFT substrate as claimed in claim 1 , wherein the substrate is a glass substrate and the patternizing operation is achieved with yellow light and etching processes.

5. The manufacturing method of an oxide semiconductor TFT substrate as claimed in claim 1 , wherein the oxide conductor layer is indium tin oxide (ITO) or indium zinc oxide (IZO) and the oxide conductor layer has a thickness less than a thickness of the drain terminal.

6. The manufacturing method of an oxide semiconductor TFT substrate as claimed in claim 3 , wherein the source terminal is ITO or IZO.

7. The manufacturing method of an oxide semiconductor TFT substrate as claimed in claim 1 , wherein the source terminal also functions as a pixel electrode and the oxide semiconductor layer is indium gallium zinc oxide (IGZO).

Assignees

• Shenzhen China Star Optoelect
• Shenzhen China Star Optoelect

Inventors

• Li Wenhui

Classifications

• H10P50/264

  by chemical means · CPC title

• H10D84/01 Primary

  Manufacture or treatment · CPC title

• H10D30/6757 Primary

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H01L21/32133

  Electricity · mapped topic

• H01L29/401

  Electricity · mapped topic