Plasma processing assembly using pulsed-voltage and radio-frequency power

Patent metadata

Field	Value
Publication number	US-11776789-B2
Application number	US-202217959074-A
Country	US
Kind code	B2
Filing date	Oct 3, 2022
Priority date	Jul 31, 2020
Publication date	Oct 3, 2023
Grant date	Oct 3, 2023

Abstract

Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

First claim

What is claimed is:

1. A plasma processing chamber, comprising:
a substrate support assembly comprising a first electrode that is disposed a first distance from a substrate supporting surface of the substrate support assembly;
a first pulsed-voltage waveform generator electrically coupled to the first electrode;
a radio frequency generator electrically coupled to a second electrode of the plasma processing chamber; and
a controller comprising a memory that includes computer program instructions stored therein, and the computer program instructions when executed by a processor of the controller cause:
a delivery, by use of the radio frequency generator, of a series of radio frequency pulses to the second electrode, wherein
the series of radio frequency pulses comprise a first radio frequency pulse and a second radio frequency pulse,
the first radio frequency pulse comprises a first radio frequency power level and a first radio frequency pulse duration, and
the second radio frequency pulse comprises a second radio frequency power level and a second radio frequency pulse duration, and

a delivery, by use of the first pulsed-voltage waveform generator, of a series of pulsed voltage waveform bursts that comprise a first voltage waveform that is established at the first electrode, wherein
the series of pulsed voltage waveform bursts comprise a first pulsed voltage waveform burst and a second pulsed voltage waveform burst that comprise a first burst duration and a second burst duration, respectively,
the first pulsed voltage waveform burst comprises a first portion of the first voltage waveform that comprises a series of voltage pulses that comprise a first voltage pulse phase and a second voltage pulse phase, and
the second pulsed voltage waveform burst comprises a second portion of the first voltage waveform that comprises a series of voltage pulses that comprise a first voltage pulse phase and a second voltage pulse phase, and
during the second voltage pulse phase of the series of voltage pulses of the first and the second portion of the first voltage waveforms the first pulsed-voltage waveform generator establishes a negative voltage at the first electrode.

2. The plasma processing chamber of claim 1 , wherein the computer program instructions when executed by the processor of the controller further causes:
each of the pulsed voltage waveform bursts within the series of pulsed voltage waveform bursts have the same burst period as each of the radio frequency pulses within the series of radio frequency pulses.

3. The plasma processing chamber of claim 1 , wherein
the substrate support assembly further comprises a second electrode that is disposed a second distance from the substrate supporting surface of the substrate support assembly, and
wherein the computer program instructions when executed by the processor of the controller further causes:
a delivery, by use of the first pulsed-voltage waveform generator or a second pulsed-voltage waveform generator, of a series of pulsed voltage waveform bursts that comprise a second voltage waveform that is established at the second electrode, wherein the series of pulsed voltage waveform bursts are synchronized with the first pulsed voltage waveform burst and the second pulsed voltage waveform burst established at the first electrode.

4. The plasma processing chamber of claim 1 , wherein the controller is further configured to synchronize the delivery of the delivery of the first voltage waveform to the first electrode with the delivery of the series of radio frequency pulses to the second electrode by generating a signal waveform that is received by the first pulsed-voltage waveform generator and the radio frequency generator.

5. The plasma processing chamber of claim 4 , wherein the signal waveform comprises multi-level pulses that include one or more signal characteristics that are used by the first pulsed-voltage waveform generator or the radio frequency generator to adjust a characteristic of the voltage waveform or the series of radio frequency pulses, respectively, based on the generation of the signal waveform.

6. The plasma processing chamber of claim 1 , wherein the first voltage waveform and the series of radio frequency pulses each comprise a plurality of multi-level pulses.

7. The plasma processing chamber of claim 1 , wherein the controller is further configured to cause a delay in a start of each of the pulsed voltage waveform bursts within the series of pulsed voltage waveform bursts by a period of time from a start to the radio frequency pulses within the series of radio frequency pulses.

8. The plasma processing chamber of claim 1 , wherein the substrate support assembly further comprises a dielectric layer that is disposed between the first electrode and the substrate supporting surface, and has an effective capacitance of between about 3 nF and about 50 nF.

9. The plasma processing chamber of claim 1 , further comprising:
a generator output coupling assembly that is configured to form an electrical connection between the first pulsed-voltage waveform generator and the first electrode; and
a chucking assembly comprising:
a chucking power supply that is electrically coupled to the generator output coupling assembly; and
a blocking resistor that has a resistance of more than about 500 kOhm that is disposed between the chucking power supply and the generator output coupling assembly.

10. A method of processing a substrate in a plasma processing chamber, comprising:
delivering, by use of a first pulsed-voltage waveform generator, a series of pulsed voltage waveform bursts that comprise a first voltage waveform that is established at a first electrode, wherein
the series of pulsed voltage waveform bursts comprise a first pulsed voltage waveform burst and a second pulsed voltage waveform burst that comprise a first burst duration and a second burst duration, respectively,
the first pulsed voltage waveform burst comprises a first portion of the first voltage waveform that comprises a series of voltage pulses that comprise a first voltage pulse phase and a second voltage pulse phase, and
the second pulsed voltage waveform burst comprises a second portion of the first voltage waveform that comprises a series of voltage pulses that comprise a first voltage pulse phase and a second voltage pulse phase, and
during the second voltage pulse phase of the series of voltage pulses of the first and the second portion of the first voltage waveform the first pulsed-voltage waveform generator establishes a negative voltage at the first electrode; and

delivering, by use of a radio frequency generator, a series of radio frequency pulses to a second electrode, wherein
the series of radio frequency pulses comprise a first radio frequency pulse and a second radio frequency pulse,
the first radio frequency pulse comprises a first radio frequency power level and a first radio frequency pulse duration, and
the second radio frequency pulse comprises a second radio frequency power level and a second radio frequency pulse duration.

11. The method of claim 10 , wherein
each of the pulsed voltage waveform bursts within the series of pulsed voltage waveform bursts have the same burst period as each of the radio frequency pulses within the series of radio frequency pulses.

12. The method of claim 10 , wherein
each of the pulsed voltage waveform bursts within the series of pulsed voltage waveform bursts have the same burst delivery length or burst rest length as each of the radio frequency pulses within the series of radio frequency pulses.

13. The method of claim 10 , wherein the first voltage

Assignees

• Applied Materials Inc

Inventors

• Dorf Leonid
• Dhindsa Rajinder
• Rogers James
• Byun Daniel Sang
• Kamenetskiy Evgeny
• Guo Yue
• Ramaswamy Kartik
• Todorow Valentin N
• Luere Olivier
• Cui Linying

Classifications

• H10P72/72

  using electrostatic chucks · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H01J2237/3341

  Reactive etching · CPC title

• H01J2237/3321

  CVD [Chemical Vapor Deposition] · CPC title