Method for forming carbon nanotubes and carbon nanotube film forming apparatus

US9059178B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9059178-B2
Application numberUS-201213665724-A
CountryUS
Kind codeB2
Filing dateOct 31, 2012
Priority dateApr 30, 2010
Publication dateJun 16, 2015
Grant dateJun 16, 2015

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Abstract

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A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma CVD on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a DC voltage to the electrode member.

First claim

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What is claimed is: 1. A method for forming carbon nanotubes, the method comprising: preparing a target object to be processed having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; agglomerating metal atoms in the catalyst metal layer by performing an oxygen plasma process on a surface of the catalyst metal layer such that migration of the metal atoms occurs on said surface of the catalyst metal layer;…

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What does patent US9059178B2 cover?
A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers s…
Who is the assignee on this patent?
Tokyo Electron Ltd
What technology area does this patent fall under?
Primary CPC classification H01L23/53276. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 16 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).