Etching method and etching apparatus

Patent metadata

Field	Value
Publication number	US-11764070-B2
Application number	US-202117305552-A
Country	US
Kind code	B2
Filing date	Jul 9, 2021
Priority date	Jul 20, 2020
Publication date	Sep 19, 2023
Grant date	Sep 19, 2023

Abstract

An etching method includes: providing, in a chamber, a substrate including a structure including a first film selected from a molybdenum film and a tungsten film; performing a first etching on the first film by supplying an oxidation gas and a first gas selected from a MoF 6 gas and a WF 6 gas into the chamber; when a pore present inside the first film is exposed by the first etching, filling the pore with one of molybdenum and tungsten by stopping the first etching and supplying a reduction gas and a second gas selected the MoF 6 gas and the WF 6 gas into the chamber; and performing a second etching on a filling layer formed in the filling and the first film by supplying the oxidation gas and a third gas selected from the MoF 6 gas and the WF 6 gas into the chamber.

First claim

What is claimed is:

1. An etching method comprising:
providing, in a chamber, a substrate including a structure including a first film selected from a molybdenum film and a tungsten film, a pore being formed in the first film;
performing a first etching on the first film by supplying an oxidation gas and a first gas selected from a MoF 6 gas and a WF 6 gas into the chamber while determining whether the pore present inside the first film is exposed by the first etching;
in response to determining that the pore present inside the first film is exposed by the first etching, stopping the first etching and filling the pore with one of molybdenum and tungsten by supplying a reduction gas and a second gas selected from the MoF 6 gas and the WF 6 gas into the chamber; and
performing a second etching on a filling layer formed in the filling and a portion of the first film that is left after the first etching by supplying the oxidation gas and a third gas selected from the MoF 6 gas and the WF 6 gas into the chamber.

2. The etching method of claim 1 , wherein the substrate further includes a laminated portion, in which the first film and a second film are laminated, and a groove, which is formed in a laminating direction of the laminated portion, and
wherein the first film is etched through the groove.

3. The etching method of claim 2 , wherein the second film is a silicon-containing film.

4. The etching method of claim 3 , further comprising:
oxidizing a surface of the first film after the performing the first etching and before the filling.

5. The etching method of claim 4 , wherein the first gas in the first etching, the second gas in the filling, and the third gas in the second etching are the same.

6. The etching method of claim 5 , wherein a gas selected from a H 2 gas, a SiH 4 gas, and a NH 3 gas is used as the reduction gas.

7. The etching method of claim 6 , wherein a pressure in the chamber in the filling ranges from 133 to 13,332 Pa.

8. The etching method of claim 7 , wherein a temperature of the substrate in the filling ranges from 200 to 400 degrees C.

9. The etching method of claim 8 , wherein, in the first etching and the second etching, a gas selected from an O 2 gas, an O 3 gas), a NO gas, and a N 2 O gas is used as the oxidation gas.

10. The etching method of claim 9 , wherein the pressure in the chamber in the first etching and the second etching ranges from 133.3 to 13,330 Pa.

11. The etching method of claim 10 , wherein the temperature of the substrate in the first etching and the second etching ranges from 50 to 400 degrees C.

12. The etching method of claim 1 , further comprising:
oxidizing a surface of the first film after the performing the first etching and before the filling.

13. The etching method of claim 1 , wherein the first gas in the first etching, the second gas in the filling, and the third gas in the second etching are the same.

14. The etching method of claim 1 , wherein a gas selected from a H 2 gas, a SiH 4 gas, and a NH 3 gas is used as the reduction gas.

15. An etching method comprising:
providing, in a chamber, a substrate including:
a laminated portion, in which a first film that is selected from a molybdenum film or a tungsten film and includes a pore formed therein, and a second film are alternately laminated; and
a groove, which is formed perpendicular to the laminated portion;

forming a protective layer made of one of the molybdenum film and the tungsten film on a wall portion of the groove formed in the laminated portion by supplying a reduction gas and a first gas selected from a MoF 6 gas and a WF 6 gas into the chamber; and
etching the first film of the laminated portion through the groove by supplying an oxidation gas and one of the MoF 6 gas and the WF 6 gas into the chamber,
wherein the etching the first film of the laminated portion includes:
performing a first etching on the first film by supplying the oxidation gas and a second gas selected from the MoF 6 gas and the WF 6 gas into the chamber while determining whether the pore present inside the first film is exposed by the first etching;
in response to determining that the pore present inside the first film is exposed by the first etching, stopping the first etching and filling the pore with one of molybdenum and tungsten by supplying the reduction gas and a third gas selected from the MoF 6 gas and the WF 6 gas into the chamber; and
performing a second etching on a filling layer formed in the filling and a portion of the first film that is left after the first etching by supplying the oxidation gas and a fourth gas selected from the MoF 6 gas and the WF 6 gas into the chamber.

16. The etching method of claim 15 , wherein the second film is a silicon-containing film.

17. The etching method of claim 15 , wherein, in the forming the protective layer, a gas selected from a H 2 gas, a SiH 4 gas, and a NH 3 gas is used as the reduction gas.

18. The etching method of claim 15 , wherein, in the etching, a gas selected from an O 2 gas, an O 3 gas), a NO gas, and a N 2 O gas is used as the oxidation gas.

19. An etching method comprising:
providing, in a chamber, a substrate including a structure including a first film selected from a molybdenum film and a tungsten film, a pore being formed in the first film;
performing a first etching on the first film by supplying an oxidation gas and a first gas selected from a MoF 6 gas and a WF 6 gas into the chamber while determining whether the pore present inside the first film is exposed by the first etching;
in response to determining that the pore present inside the first film is exposed by the first etching, stopping the first etching and subsequently oxidizing a surface of the first film;
after the oxidizing, filling the pore with one of molybdenum and tungsten by supplying a reduction gas and a second gas selected from the MoF 6 gas and the WF 6 gas into the chamber; and
performing a second etching on a filling layer formed in the filling and the first film by supplying the oxidation gas and a third gas selected from the MoF 6 gas and the WF 6 gas into the chamber.

Assignees

• Tokyo Electron Ltd

Inventors

• Toda Satoshi
• Shindo Naoki
• Suzuki Haruna
• You Gen

Classifications

• H10W20/0595

  by using multiple deposition steps separated by etching steps · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10W20/065

  by making at least a portion of the conductive part non-conductive, e.g. by oxidation · CPC title

• H10W20/054

  by selectively removing parts thereof (H10W20/034 takes precedence) · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title