Method for manufacturing a superconducting LC-type resonator and superconducting resonator thus obtained

US11757168B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11757168-B2
Application numberUS-201917312842-A
CountryUS
Kind codeB2
Filing dateDec 4, 2019
Priority dateDec 13, 2018
Publication dateSep 12, 2023
Grant dateSep 12, 2023

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Abstract

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A method for manufacturing a superconducting LC-type resonator of the type including at least one high-resistivity substrate on which are printed an inductive meander, a first so-called lower electrode and a second so-called upper electrode arranged opposite the first so as to form together a capacitor connected in parallel with the inductive meander, as well as inductive coupling means dedicated to the resonator, in which a sacrificial aluminium layer is deposited between the first and second electrodes. Also disclosed is the superconducting LC-type resonator thus obtained and the use of such a resonator for detecting the noise of a millimetre photon.

First claim

Opening claim text (preview).

The invention claimed is: 1. A superconducting LC-type resonator of the type comprising: at least one high-resistivity substrate on which the following are printed: an inductive meander; a first electrode known as lower; and a second electrode known as upper arranged opposite the first so as to form together a capacitor connected in parallel with the inductive meander; as well as RF coupling means dedicated to said resonator, the first electrode known as lower and the second electrode known as upper are substantially parallel and separated by an empty space with a distance that varies from a few tens to a few hundreds of nanometres. 2. The superconducting LC-type resonator according to claim 1 , characterized in that the first electrode known as lower and the second electrode known as upper are substantially parallel and separated by an empty space with a distance shorter than 400 nm. 3. The superconducting LC-type resonator according to claim 1 , characterized in that the substrate is chosen from the list defined by high-resistivity silicon substrates, sapphires with a diameter of 2 inches and a thickness of 330 μm, quartz, silicon dioxide, silicon carbide. 4. The superconducting LC-type resonator according to claim 1 , characterized in that the inductive meander and the lower electrode are etchings of titanium nitrides (TiN) with a thickness comprised between 40 and 80 nm. 5. The superconducting LC-type resonator according to claim 1 , characterized in that the coupling means constitute a coplanar read line etched on the substrate, of 50 Ohms and made of niobium (Nb), with a thickness comprised between 80 and 150 nm. 6. The superconducting LC-type resonator according to claim 1 , characterized in that the upper electrode is an electrode with a thickness comprised between 350 and 550 nm constituted primarily by a material chosen from the list defined by (TiN, TaN, NbN) using lithography techniques, preferably optical lithography, followed by PVD depositions, preferably cathode sputtering depositions, then definition using lift-off techniques. 7. The superconducting LC-type resonator according to claim 1 , characterized in that the upper electrode is constituted by N microbridges in parallel and connected at their respective ends by two strips. 8. The superconducting LC-type resonator according to claim 1 , characterized in that it comprises a plurality of lower electrodes and upper electrodes, arranged to form a plurality of capacitors in parallel, so that said resonator demonstrates a resonance comprised between 0.1 and 8 GHz as well as an intrinsic quality factor Qi greater than 700,000. 9. A use of a superconducting LC-type resonator according to claim 1 for detecting electromagnetic radiation in the millimetre/submillimetre to X-ray range. 10. A method for manufacturing a superconducting LC-type resonator of the type comprising: at least one high-resistivity substrate on which the following are printed: an inductive meander; a first electrode known as lower and a second electrode known as upper arranged opposite the first so as to form together a capacitor connected in parallel with the inductive meander; as well as inductive coupling means dedicated to said resonator; including at least the following steps carried out in succession: a step E 0 of providing the high-resistivity substrate; a step E 1 of simultaneously printing the inductive meander and the lower electrode; a step E 2 of printing the coupling means; a step E 3 of printing an aluminium layer completely covering the lower electrode; a step E 4 of printing the upper electrode on the aluminium layer; and a step E 5 of dissolving the aluminium layer. 11. The method for manufacturing a superconducting LC-type resonator according to claim 10 , characterized in that the printing step E 3 results in an aluminium layer with a thickness that varies from a few tens to a few hundreds of nanometres. 12. The method for manufacturing a superconducting LC-type resonator according to claim 10 , characterized in that the printing step E 3 results in an aluminium layer with a thickness smaller than 400 nm. 13. The method for manufacturing a superconducting LC-type resonator according to claim 10 , characterized in that the step E 1 of simultaneously printing the inductive meander and the lower electrode is performed using lithography techniques, preferably optical lithography, followed by reactive-ion etching, starting from a layer of titanium nitride (TiN) with a thickness of the order of 60 nm deposited beforehand using PVD techniques, preferably cathode sputtering techniques. 14. The method for manufacturing a superconducting LC-type resonator according to claim 10 , characterized in that the printing step E 2 includes producing a coplanar read line of the order of 50 Ohms made of niobium and with a thickness of the order of 100 nm, using lithography techniques, preferably optical lithography, followed by PVD depositions, preferably cathode sputtering depositions, then definition using lift-off techniques. 15. The method for manufacturing a superconducting LC-type resonator according to claim 10 , characterized in that the step E 3 of printing the aluminium layer is performed using lithography techniques, preferably optical lithography, followed by PVD depositions, preferably cathode sputtering depositions, then definition using lift-off techniques. 16. The method for manufacturing a superconducting LC-type resonator according to claim 10 , characterized in that the printing step E 4 can result in the production of the upper electrode primarily constituted by a material chosen from the list defined by (TiN, TaN, NbN) using lithography techniques, preferably optical lithography, followed by PVD depositions, preferably cathode sputtering depositions, then definition using lift-off techniques. 17. The method for manufacturing a superconducting LC-type resonator according to claim 10 , characterized in that the printing step E 4 results in the production of the upper electrode from TiN using lithography techniques, preferably optical lithography, followed by PVD depositions, preferably cathode sputtering depositions, then definition using lift-off techniques. 18. The method for manufacturing a superconducting LC-type resonator according to claim 10 , characterized in that the dissolving step E 5 is carried out by immersing the resonator in a developer, including a basic solution with a PH greater than 10.5 containing, preferably, ammonia or else tetramethylammonium hydroxide, for a duration comprised between 20 and 60 minutes. 19. The method for manufacturing a superconducting LC-type resonator according to claim 10 , characterized in that the step E 4 of printing the upper electrode leads to the formation of an upper electrode constituted by N microbridges connected in parallel at their respective ends by two strips. 20. The method for manufacturing a superconducting LC-type resonator according to claim 10 , characterized in that, during steps E 1 , E 3 , E 4 , a plurality of lower electrodes and upper electrodes, arranged to form a plurality of capacitors in parallel, are printed.

Assignees

Inventors

Classifications

  • H01P7/086Primary

    Coplanar waveguide resonators (H01P7/088 takes precedence) · CPC title

  • H01P7/082Primary

    Microstripline resonators (H01P7/088 takes precedence) · CPC title

  • Manufacturing resonators · CPC title

  • Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} · CPC title

  • with provision for removing metal surfaces · CPC title

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What does patent US11757168B2 cover?
A method for manufacturing a superconducting LC-type resonator of the type including at least one high-resistivity substrate on which are printed an inductive meander, a first so-called lower electrode and a second so-called upper electrode arranged opposite the first so as to form together a capacitor connected in parallel with the inductive meander, as well as inductive coupling means dedicat…
Who is the assignee on this patent?
Centre Nat Rech Scient, Observatoire Paris, Cy Cergy Paris Univ, and 2 more
What technology area does this patent fall under?
Primary CPC classification H01P7/086. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 12 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).