Semiconductor device and manufacturing method of semiconductor device
US-2018350961-A1 · Dec 6, 2018 · US
Semiconductor device and fabrication method for semiconductor device
US11742249B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11742249-B2 |
| Application number | US-202217902921-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 5, 2022 |
| Priority date | Jun 17, 2019 |
| Publication date | Aug 29, 2023 |
| Grant date | Aug 29, 2023 |
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Abstract
Official abstract text for this publication.
A fabrication method for a semiconductor device includes measuring a thickness of a semiconductor substrate in which a bulk donor of a first conductivity type is entirely distributed, adjusting an implantation condition in accordance with the thickness of the semiconductor substrate and implanting hydrogen ions from a lower surface of the semiconductor substrate to an upper surface side of the semiconductor substrate, and annealing the semiconductor substrate and forming, in a passage region through which the hydrogen ions have passed, a first high concentration region of the first conductivity type in which a donor concentration is higher than a doping concentration of the bulk donor.
First claim
Opening claim text (preview).
What is claimed is: 1. A fabrication method for a semiconductor device, the fabrication method comprising: a measurement step to measure a thickness of a semiconductor substrate in which a bulk donor of a first conductivity type is entirely distributed; a first hydrogen implantation step to adjust an implantation condition in accordance with the thickness of the semiconductor substrate, and implant hydrogen ions from a lower surface of the semiconductor substrate to an upper surface side of the semiconductor substrate; and an anneal step to anneal the semiconductor substrate and form, in a passage region through which the hydrogen ions have passed, a first high concentration region of the first conductivity type in which a donor concentration is higher than a doping concentration of the bulk donor. 2. The fabrication method for the semiconductor device according to claim 1 , wherein the first hydrogen implantation step includes adjusting an implantation depth of the hydrogen ions in accordance with the thickness of the semiconductor substrate. 3. The fabrication method for the semiconductor device according to claim 2 , wherein the first hydrogen implantation step includes adjusting acceleration energy of the hydrogen ions in accordance with the thickness of the semiconductor substrate. 4. The fabrication method for the semiconductor device according to claim 2 , wherein the first hydrogen implantation step includes adjusting a characteristic of a shielding member arranged on the lower surface of the semiconductor substrate in accordance with the thickness of the semiconductor substrate. 5. The fabrication method for the semiconductor device according to claim 1 , wherein the first hydrogen implantation step includes adjusting a dose amount of the hydrogen ions in accordance with the thickness of the semiconductor substrate. 6. The fabrication method for the semiconductor device according to claim 1 , wherein the anneal step includes adjusting an anneal condition of the semiconductor substrate in accordance with the thickness of the semiconductor substrate. 7. The fabrication method for the semiconductor device according to claim 1 , further comprising: a second hydrogen implantation step to implant hydrogen ions from the lower surface of the semiconductor substrate to a region on a lower surface side of the semiconductor substrate before the anneal step, wherein the second hydrogen implantation step includes adjusting the implantation condition of the hydrogen ions in accordance with the thickness of the semiconductor substrate.
Assignees
Inventors
Classifications
Thermal treatments, e.g. annealing or sintering · CPC title
being group IV material · CPC title
Diffusion lifetime killers · CPC title
Recoil-implantation · CPC title
into Group IV semiconductors · CPC title
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- What does patent US11742249B2 cover?
- A fabrication method for a semiconductor device includes measuring a thickness of a semiconductor substrate in which a bulk donor of a first conductivity type is entirely distributed, adjusting an implantation condition in accordance with the thickness of the semiconductor substrate and implanting hydrogen ions from a lower surface of the semiconductor substrate to an upper surface side of the …
- Who is the assignee on this patent?
- Fuji Electric Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P74/203. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 29 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).