Method for manufacturing a film on a support having a non-flat surface
US-12087615-B2 · Sep 10, 2024 · US
Method for manufacturing composite wafers
US9312166B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9312166-B2 |
| Application number | US-201214343515-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 14, 2012 |
| Priority date | Sep 15, 2011 |
| Publication date | Apr 12, 2016 |
| Grant date | Apr 12, 2016 |
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Abstract
Official abstract text for this publication.
This invention provides a method for manufacturing composite wafers in which at least two composite wafers can be obtained from one donor wafer, and in which the chamfering step can be omitted. Provided is a method for manufacturing composite wafers comprising: bonding surfaces of at least two handle wafers and a surface of a donor wafer which has a diameter greater than or equal to a sum of diameters of the at least two handle wafers and which has a hydrogen ion implantation layer formed inside thereof by implanting hydrogen ions from the surface of the donor wafer, to obtain a bonded wafer; heating the bonded wafer at 200° C. to 400° C.; and detaching a film from the donor wafer along the hydrogen ion implantation layer of the heated bonded wafer, to obtain the composite wafers having the film transferred onto the at least two handle wafers.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing composite wafers comprising at least the steps of: bonding surfaces of at least two handle wafers and a surface of a donor wafer which has a diameter greater than or equal to a sum of diameters of the at least two handle wafers and which has a hydrogen ion implantation layer formed inside thereof by implanting hydrogen ions from the surface of the donor wafer, to obtain a bonded wafer; heating the bonded wafer at 200° C. to…
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Electricity · mapped topic
Electricity · mapped topic
- H10P90/00Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9312166B2 cover?
- This invention provides a method for manufacturing composite wafers in which at least two composite wafers can be obtained from one donor wafer, and in which the chamfering step can be omitted. Provided is a method for manufacturing composite wafers comprising: bonding surfaces of at least two handle wafers and a surface of a donor wafer which has a diameter greater than or equal to a sum of di…
- Who is the assignee on this patent?
- Akiyama Shoji, Nagata Kazutoshi, Shinetsu Chemical Co
- What technology area does this patent fall under?
- Primary CPC classification H10P90/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 12 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).