Multiple-mask multiple-exposure lithography and masks

Patent metadata

Field	Value
Publication number	US-11726408-B2
Application number	US-202217874676-A
Country	US
Kind code	B2
Filing date	Jul 27, 2022
Priority date	Jul 31, 2017
Publication date	Aug 15, 2023
Grant date	Aug 15, 2023

Abstract

Examples of a multiple-mask multiple-exposure lithographic technique and suitable masks are provided herein. In some examples, a photomask includes a die area and a stitching region disposed adjacent to the die area and along a boundary of the photomask. The stitching region includes a mask feature for forming an integrated circuit feature and an alignment mark for in-chip overlay measurement.

First claim

What is claimed is:

1. A method comprising:
using a first photomask and a second photomask to form an integrated circuit,
wherein the first photomask includes:
a first die area that includes a first portion of a mask feature for forming the integrated circuit; and
a first stitching area that includes a second portion of the mask feature and a first alignment mark for in-chip overlay measurement with respect to the second photomask, and

wherein the second photomask includes:
a second die area; and
a second stitching area that includes a third portion of the mask feature.

2. The method of claim 1 , wherein the second portion of the mask feature has a different width than the first portion of the mask feature.

3. The method of claim 1 , wherein the using of the first photomask and the second photomask to form the integrated circuit further includes using a third photomask to form the integrated circuit,
wherein the first photomask further includes a third stitching area that includes a second alignment mark for in-chip overlay measurement with respect to the third photomask.

4. The method of claim 3 , wherein the first alignment mark has a different shape than the second alignment mark.

5. The method of claim 1 , wherein the first alignment mark is selected from the group consisting of an inner box alignment feature, an outer box alignment feature, an inner cross alignment feature, an outer cross alignment feature, and a test line.

6. The method of claim 1 , wherein the first photomask further includes a frame area proximate the first die area that includes a second alignment mark for interlevel overlay measurement.

7. The method of claim 6 , wherein the frame area further includes a scribe line.

8. The method of claim 1 , wherein the first photomask further includes a second stitching area that is free of any mask features for forming the integrated circuit.

9. A method comprising:
using a first photomask to form a semiconductor device, the first photomask including:
a first die area including a mask feature, the mask feature designating a functional feature of the semiconductor device; and
a first stitching region adjacent a first edge of an outer boundary of the photomask, the first stitching region including a first alignment mark for in-chip overlay measurement with respect to a second photomask; and
a second stitching region adjacent a second edge of the outer boundary of the photomask, the second stitching region including a second alignment mark for in-chip overlay measurement with respect to a third photomask.

10. The method of claim 9 , wherein the first alignment mark includes a plurality of first alignment marks, and
wherein at least one alignment mark from the plurality of first alignment marks has a different shape than another one of the alignment marks from the plurality of first alignment marks.

11. The method of claim 9 , wherein the mask feature extends into at least one of the first and second stitching regions.

12. The method of claim 9 , wherein the first photomask further includes a third alignment mark for in-chip overlay measurement that is positioned outside of the first and second stitching regions.

13. The method of claim 9 , wherein the first photomask further includes a third alignment mark for interlevel overlay measurement.

14. The method of claim 13 , wherein the third alignment mark is positioned outside of the first and second stitching regions.

15. The method of claim 9 , wherein the first photomask further includes a third stitching region interfacing with the first and second stitching regions,
wherein the third stitching region includes a third alignment mark for in-chip overlay measurement, and
wherein the third stitching region is free of any mask features designating any functional feature of the semiconductor device.

16. A method comprising:
using a photomask to form a semiconductor device, the photomask including:
a first die area including a mask feature, the mask feature designating a functional feature of the semiconductor device; and
a frame area disposed along an outer boundary of the photomask, wherein the frame area includes:
a first alignment mark for interlevel overlay measurement; and
a second alignment mark for in-chip overlay measurement; and

a first stitching area adjacent the outer boundary of the photomask, the first stitching region including a third alignment mark for in-chip overlay measurement, wherein the first stitching area is free of any alignment marks for interlevel overlay measurement.

17. The method of claim 16 , wherein the mask feature designating the functional feature of the semiconductor device extends continuously from the first die area into the first stitching area.

18. The method of claim 16 , wherein the second alignment mark has a different shape than the third alignment mark.

19. The method of claim 16 , further comprising:
receiving a design layout; and
forming the photomask based on the design layout.

20. The method of claim 16 , wherein the third alignment mark is selected from the group consisting of an inner box alignment feature, an outer box alignment feature, an inner cross alignment feature, an outer cross alignment feature, and a test line.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Yu Peter
• Hsu Chih-Tung
• Wang Kevin
• Hu Chih-Chia
• Chen Roger

Classifications

• G03F7/70475 Primary

  Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display · CPC title

• G03F1/38 Primary

  Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof · CPC title

• G03F1/42

  Alignment or registration features, e.g. alignment marks on the mask substrates · CPC title

• G03F1/70

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title

• G03F1/00

  Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof · CPC title