Vacuum pump protection against deposition byproduct buildup

Patent metadata

Field	Value
Publication number	US-11710623-B2
Application number	US-202117302622-A
Country	US
Kind code	B2
Filing date	May 7, 2021
Priority date	Sep 28, 2018
Publication date	Jul 25, 2023
Grant date	Jul 25, 2023

Abstract

A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

First claim

What is claimed is:

1. A vacuum pump system for exhausting one or more etch gases and one or more deposition gases from a processing chamber, the vacuum pump system comprising:
a roughing pump through which deposition precursors and etch gases are exhausted from the processing chamber, wherein the roughing pump comprises one or more shafts supporting one or more rotor components, each shaft having a channel for receiving a heat source, wherein the heat source includes an electrical wire, a heat lamp, or a hot fluid; and
a system controller configured with instructions to perform the following operations:
exhaust the deposition precursors or etch gases from the processing chamber; and
heat internal surfaces of the one or more shafts and the one or more rotor components to an elevated temperature using the heat source while exhausting the deposition precursors or etch gases.

2. The vacuum pump system of claim 1 , wherein the elevated temperature is equal to or greater than about 160° C.

3. The vacuum pump system of claim 1 , wherein the elevated temperature is sufficient to prevent deposition byproduct buildup as a result of reactions between the etch gases and the deposition gases.

4. The vacuum pump system of claim 1 , wherein the system controller configured with instructions to heat internal surfaces is configured with instructions to draw thermal energy from a reservoir outside the vacuum pump system and transfer the thermal energy to the internal surfaces by radiation and/or conduction.

5. The vacuum pump system of claim 1 , wherein the etch gases include hydrogen bromide and the deposition precursors include amino-silane precursors.

6. The vacuum pump system of claim 1 , wherein the roughing pump further comprises:
a stator component enclosing the one or more rotor components of the roughing pump, wherein the deposition precursors and etch gases pass through a passage in a stator component.

7. The vacuum pump system of claim 1 , wherein each of the one or more shafts includes an inner conductive material and an outer insulating material.

8. A vacuum pump system for exhausting one or more etch gases and one or more deposition gases from a processing chamber, the vacuum pump system comprising: a roughing pump through which deposition precursors and etch gases are exhausted from the processing chamber, wherein the roughing pump comprises one or more shafts supporting one or more rotor components; a system controller configured with instructions to perform the following operations: exhaust the deposition precursors or etch gases from the processing chamber; and heat surfaces of the one or more shafts and the one or more rotor components to an elevated temperature by flowing heated purge gas, via an internal channel in the one or more shafts, across the surfaces of the one or more shafts and the one or more rotor components.

9. The vacuum pump system of claim 8 , wherein the elevated temperature is equal to or greater than about 160° C.

10. The vacuum pump system of claim 8 , wherein the system controller configured with instructions to heat surfaces is configured with instructions to flow the heated purge gas while exhausting the deposition precursors or etch gases.

11. The vacuum pump system of claim 8 , wherein the system controller is configured with instructions to perform the following operations:
exhaust the deposition precursors from the processing chamber via a passage in the roughing pump; and
exhaust the etch gases from the processing chamber via the passage in the roughing pump, wherein flowing the heated purge gas occurs in between operations of exhausting the deposition precursors and exhausting the etch gases.

Assignees

• Lam Res Corp

Inventors

• Drewery John Stephen
• Kamp Tom A
• Yan Haoquan
• Daugherty John Edward
• Tan Ali Sucipto
• Tseng Ming-Kuei
• Freeman Bruce

Classifications

• H10P72/722

  Details of electrostatic chucks · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title