Conformal film deposition for gapfill

Patent metadata

Field	Value
Publication number	US-9355886-B2
Application number	US-201314074596-A
Country	US
Kind code	B2
Filing date	Nov 7, 2013
Priority date	Apr 15, 2010
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

A method and apparatus for conformally depositing a dielectric oxide in high aspect ratio gaps in a substrate is disclosed. A substrate is provided with one or more gaps into a reaction chamber where each gap has a depth to width aspect ratio of greater than about 5:1. A first dielectric oxide layer is deposited in the one or more gaps by CFD. A portion of the first dielectric oxide layer is etched using a plasma etch, where etching the portion of the first dielectric oxide layer occurs at a faster rate near a top surface than near a bottom surface of each gap so that the first dielectric oxide layer has a tapered profile from the top surface to the bottom surface of each gap. A second dielectric oxide layer is deposited in the one or more gaps over the first dielectric oxide layer via CFD.

First claim

What is claimed is:

1. A method of conformally depositing a dielectric oxide in high aspect ratio gaps in a substrate, the method comprising:
(a) providing a substrate with one or more gaps into a reaction chamber, wherein each gap has a depth to width aspect ratio of greater than about 5:1;
(b) depositing a first dielectric oxide layer in the one or more gaps via conformal film deposition (CFD), wherein depositing the first dielectric oxide layer in the one or more gaps via CFD includes:
introducing a first reactant in vapor phase into the reaction chamber under conditions allowing the first reactant to adsorb onto the substrate surface;
introducing a second reactant in vapor phase into the reaction chamber while the first reactant is adsorbed on the substrate surface, wherein the second reactant is introduced without sweeping the first reactant out of the reaction chamber; and
exposing the substrate surface to plasma to drive a reaction between the first and the second reactants on the substrate surface to form the first dielectric oxide layer;

(c) etching a portion of the first dielectric oxide layer using a plasma etch, wherein etching the portion of the first dielectric oxide layer occurs at a faster rate near a top surface than near a bottom surface of each gap so that the first dielectric oxide layer has a tapered profile from the top surface to the bottom surface of each gap; and
(d) depositing a second dielectric oxide layer in the one or more gaps over the first dielectric oxide layer via CFD.

2. The method of claim 1 , further comprising:
repeating steps (b)-(d) to substantially fill the one or more gaps.

3. The method of claim 1 , wherein depositing the second dielectric oxide layer includes substantially filling the one or more gaps.

4. The method of claim 1 , further comprising:
flowing a fluorine-containing species into a remote plasma to generate a plasma-activated etchant; and
flowing the plasma-activated etchant into the reaction chamber to react with the first dielectric oxide layer to perform the etch.

5. The method of claim 4 , wherein the fluorine-containing species includes nitrogen trifluoride (NF 3 ).

6. The method of claim 4 , further comprising:
flowing hydrogen (H 2 ) into the reaction chamber while etching the portion of the first dielectric oxide layer.

7. The method of claim 6 , wherein a flow rate ratio of hydrogen to the fluorine-containing species is between about 1:1 and about 5:1.

8. The method of claim 1 , wherein the first dielectric oxide layer and the second dielectric oxide layer each include silicon dioxide (SiO 2 ).

9. The method of claim 1 , wherein a thickness of the first dielectric oxide layer is between about 100 Å and about 500 Å.

10. An apparatus for conformally depositing a dielectric oxide in high aspect ratio gaps in a substrate, the apparatus comprising:
a reaction chamber;
a plasma source coupled to the reaction chamber; and
a controller comprising instructions for performing the following operations:
(a) providing a substrate into the reaction chamber, wherein the substrate comprises one or more gaps, each gap having a depth to width aspect ratio of greater than about 5:1;
(b) depositing a first dielectric oxide layer in the one or more gaps via conformal film deposition (CFD), wherein depositing the first dielectric oxide layer in the one or more gaps via CFD includes:
introducing a first reactant in vapor phase into the reaction chamber under conditions allowing the first reactant to adsorb onto the substrate surface;
introducing a second reactant in vapor phase into the reaction chamber while the first reactant is adsorbed on the substrate surface, wherein the second reactant is introduced without sweeping the first reactant out of the reaction chamber; and
exposing the substrate surface to plasma to drive a reaction between the first and the second reactants on the substrate surface to form the first dielectric oxide layer:

(c) etching a portion of the first dielectric oxide layer using a plasma etch, wherein etching the portion of the first dielectric oxide layer occurs at a faster rate near a top surface than near a bottom surface of each gap so that the first dielectric oxide layer has a tapered profile from the top surface to the bottom surface of each gap; and
(d) depositing a second dielectric oxide layer in the one or more gaps over the first dielectric oxide layer via CFD.

11. The apparatus of claim 10 , wherein the controller further comprises instructions to perform:
repeating steps (b)-(d) to substantially fill the one or more gaps.

12. The apparatus of claim 10 , wherein the controller comprising instructions for depositing the second dielectric oxide layer comprises instructions for substantially filling the one or more gaps.

13. The apparatus of claim 10 , wherein the controller further comprises instructions to perform:
flowing a fluorine-based species into the plasma source to generate a plasma-activated etchant; and
flowing the plasma-activated etchant into the reaction chamber to react with the first dielectric oxide layer to perform the etch.

14. The apparatus of claim 13 , wherein the controller further comprises instructions to perform:
flowing hydrogen (H 2 ) into the reaction chamber while etching the portion of the first dielectric oxide layer.

Assignees

• Novellus Systems Inc

Inventors

• Swaminathan Shankar
• Van Schravendijk Bart
• Lavoie Adrien
• Varadarajan Sesha
• Park Jason Daejin
• Danek Michal
• Shoda Naohiro

Classifications

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title