Crystalline semiconductor film, plate-like body and semiconductor device

Patent metadata

Field	Value
Publication number	US-11682702-B2
Application number	US-202017114194-A
Country	US
Kind code	B2
Filing date	Dec 7, 2020
Priority date	Jul 22, 2014
Publication date	Jun 20, 2023
Grant date	Jun 20, 2023

Abstract

A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

First claim

The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows:

1. A semiconductor device comprising:
a crystalline semiconductor film that comprises a corundum structured oxide semiconductor as a major component, the oxide semiconductor that comprises an oxide comprising gallium and/or indium, and a thickness of the crystalline semiconductor film that is 1 μm or more; and
an electrode that is arranged on the crystalline semiconductor film,
the crystalline semiconductor film having a trench structure including at least one or more trench grooves.

2. The semiconductor device of claim 1 ,
wherein the trench structure includes two or more trench grooves.

3. The semiconductor device of claim 1 ,
wherein at least a part of the electrode is arranged in the trench grooves.

4. The semiconductor device of claim 3 ,
wherein at least the part of the electrode is arranged in the trench grooves via an insulating film.

5. The semiconductor device of claim 1 ,
wherein the oxide semiconductor includes at least gallium.

6. The semiconductor device of claim 1 ,
wherein the crystalline semiconductor film includes gallium at an atomic ratio of 0.5 or more in the metal elements contained in the crystalline semiconductor film.

7. The semiconductor device of claim 1 ,
wherein the crystalline semiconductor film includes an n− type semiconductor layer and an n+type semiconductor layer.

8. The semiconductor device of claim 1 ,
wherein the semiconductor device is a vertical device.

9. The semiconductor device of claim 1 ,
wherein the semiconductor device is a power device.

10. The semiconductor device of claim 1 ,
wherein the semiconductor device is a Schottky barrier diode (SBD), a Metal oxide semiconductor field effect transistor (MOSFET), a static induction transistor (SIT), a Junction field effect transistor (JFET), or an insulated gate bipolar transistor (IGBT).

11. A semiconductor device comprising:
a crystalline semiconductor film that comprises an oxide semiconductor that comprises an oxide comprising gallium and/or indium, and a thickness of the crystalline semiconductor film that is 1 μm or more; and
a Schottky electrode that is arranged on the crystalline semiconductor film,
the crystalline semiconductor film having a trench structure including at least two or more trench grooves,
at least a part of the Schottky electrode that is arranged in the trench grooves via an insulating film, and
the semiconductor device is a diode.

Assignees

• Flosfia Inc

Inventors

• Hitora Toshimi
• Oda Masaya
• Takatsuka Akio

Classifications

• H10P14/3441

  Conductivity type · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title