Crystalline multilayer structure and semiconductor device

Patent metadata

Field	Value
Publication number	US-9590050-B2
Application number	US-201414578072-A
Country	US
Kind code	B2
Filing date	Dec 19, 2014
Priority date	May 8, 2014
Publication date	Mar 7, 2017
Grant date	Mar 7, 2017

Abstract

Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.

First claim

The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows:

1. A crystalline multilayer structure comprising:
a metal layer containing a uniaxially oriented metal as a major component; and
a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component, wherein
the crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum, the crystalline oxide semiconductor has a corundum structure or β-galia structure and is uniaxially oriented in the film thickness direction.

2. The crystalline multilayer structure of claim 1 , wherein the crystalline oxide semiconductor contains gallium.

3. The crystalline multilayer structure of claim 1 , wherein the metal is platinum, gold, or palladium.

4. The crystalline multilayer structure of claim 1 , wherein the metal layer is a metal film disposed on a base substrate.

5. The crystalline multilayer structure of claim 4 , wherein the base substrate is a sapphire substrate, a Si substrate, a quartz substrate, an aluminum nitride substrate, a boron nitride substrate, a SiC substrate, a glass substrate, a SiGe substrate, or a plastic substrate.

6. A semiconductor device comprising the crystalline multilayer structure of claim 1 .

7. A semiconductor device comprising:
the crystalline multilayer structure of claim 1 ; and
an electrode disposed directly on the crystalline multilayer structure or with another layer therebetween.

8. A semiconductor device comprising:
a metal layer containing a uniaxially oriented metal as a major component; and
a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component, wherein
the crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum, the crystalline oxide semiconductor has a corundum structure or β-galia structure and is uniaxially oriented in the film thickness direction.

9. The semiconductor device of claim 6 , wherein the semiconductor device is a vertical device.

10. The semiconductor device of claim 6 , wherein the semiconductor device is a power device.

11. The semiconductor device of claim 6 , wherein the semiconductor device is a Schottky barrier diode (SBD), a metal semiconductor field-effect transistor (MESFET), a high-electron-mobility transistor (HEMT), a metal oxide semiconductor field-effect transistor (MOSFET), a static induction transistor (SIT), a junction field-effect transistor (JFET), an insulated gate bipolar transistor (IGBT), or a light-emitting diode (LED).

12. The semiconductor device of claim 6 , wherein the semiconductor device is a Schottky barrier diode (SBD), a metal oxide semiconductor field-effect transistor (MOSFET), or a static induction transistor (SIT).

13. The semiconductor device of claim 6 , wherein the semiconductor device is a light-emitting diode comprising the crystalline multilayer structure and a light-emitting layer disposed directly on an upper surface or lower surface of the crystalline multilayer structure or with another layer therebetween.

Assignees

• Flosfia Inc
• Flosfia Inc

Inventors

• Hitora Toshimi
• Oda Masaya
• Takatsuka Akio

Classifications

• H10P14/3438

  Doping during depositing · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3241 Primary

  being conductive materials · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3458

  Monocrystalline · CPC title