Two-terminal reversibly switchable memory device

Patent metadata

Field	Value
Publication number	US-11672189-B2
Application number	US-202117194609-A
Country	US
Kind code	B2
Filing date	Mar 8, 2021
Priority date	Feb 6, 2004
Publication date	Jun 6, 2023
Grant date	Jun 6, 2023

Abstract

A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric filed to cause oxygen ionic motion.

First claim

The invention claimed is:

1. A memory element, comprising:
an oxygen repository;
a mixed valence conductive oxide that is less conductive in its oxygen deficient state; and
an electrolytic tunnel barrier that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.

2. The memory element of claim 1 , wherein the mixed valence conductive oxide has a substantially crystalline structure.

3. The memory element of claim 2 , wherein the mixed valence conductive oxide is placed in its oxygen deficient state during normal operation and retains its substantially crystalline structure during the normal operation.

4. The memory element of claim 1 , wherein a conductivity of the memory element is indicative of a memory state and the memory state is determined non-destructively.

5. The memory element of claim 1 , wherein the electric field causes oxygen from the mixed valence conductive oxide to move into the electrolytic tunnel barrier during normal operation.

6. The memory element of claim 5 , wherein the electric field causes oxygen from the mixed valence conductive oxide to move through the electrolytic tunnel barrier during normal operation.

7. The memory element of claim 1 , wherein the memory element Is part of a memory cell having a feature size of not more than about 4f 2 , f being the minimum fabrication line width.

8. A memory element, comprising:
an oxygen repository;
an electrolytic tunneling barrier having a tunnel barrier width; and
a conductive material having a low conductivity region that forms an effective tunnel barrier width greater than the tunnel barrier width, the low conductivity region being formed responsive to a voltage across the memory element.

9. The memory element of claim 8 , wherein a conductivity of the memory element is indicative of a memory state and the memory state is determined non-destructively.

10. The memory element of claim 8 , wherein an electric field causes anion motion from the conductive material into the electrolytic tunneling barrier during normal operation.

11. The memory element of claim 10 , Wherein the electric field causes anion motion from the conductive material through the electrolytic tunneling barrier during normal operation.

12. The memory element of claim 8 , wherein the conductive material has a substantially crystalline structure.

13. The memory element of claim 12 , wherein the conductive material retains its substantially crystalline structure during normal operation.

14. The memory element Of claim 8 , wherein the memory element is part of a memory cell having a feature size of not more than about 4f 2 , f being the minimum fabrication line width.

15. A two terminal electrical device, comprising:
an oxygen repository;
a tunneling barrier having a tunnel barrier width of less than approximately 50 angstroms; and
a conductive material in series with the tunneling barrier and having mobile ions;
wherein the tunneling barrier is an electrolyte to the mobile ions of the conductive material; and
wherein the tunneling barrier has a first conductivity at a read voltage and a second conductivity at the read voltage after being applied a programming voltage.

16. The two terminal electrical device of claim 15 , wherein the conductivity of the electrical device is indicative of a memory state and the memory state is determined non-destructively.

17. The two terminal electrical device of claim 15 , wherein an electric field causes anion motion from the conductive material into the tunneling barrier during normal operation.

18. The two terminal electrical device of claim 17 , wherein the electric field causes anion motion from the conductive material through the tunneling barrier during normal operation.

19. The two terminal electrical device of claim 15 ,
wherein the conductive material has a substantially crystalline structure.

20. The two terminal electrical device of claim 19 , wherein the conductive material retains its substantially crystalline structure during normal operation.

Assignees

• Hefei Reliance Memory Ltd

Inventors

• Rinerson Darrell
• Chevallier Christophe J
• Kinney Wayne
• Lambertson Roy
• Sanchez Jr John E
• Schloss Lawrence
• Swab Philip
• Ward Edmond

Classifications

• G11C2213/53

  Structure wherein the resistive material being in a transistor, e.g. gate · CPC title

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title

• G11C2213/71

  Three dimensional array · CPC title

• G11C2013/0045

  Read using current through the cell · CPC title

• G11C13/004

  Reading or sensing circuits or methods · CPC title