Optoelectronic circuit with low-flicker light-emitting diodes
US-2017223784-A1 · Aug 3, 2017 · US
US11664384B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11664384-B2 |
| Application number | US-202117219131-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 31, 2021 |
| Priority date | Jun 5, 2017 |
| Publication date | May 30, 2023 |
| Grant date | May 30, 2023 |
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Provided is a display apparatus. The display apparatus may include a monolithic device in which a light emitting element array, a transistor array, and a color control member are monolithically provided on one substrate. The display apparatus may include a first layered structure including the light emitting element array, a second layered structure including the transistor array, and a third layered structure including the color control member, wherein the second layered structure may be between the first layered structure and the third layered structure. The light emitting element array may include a plurality of light emitting elements comprising an inorganic material. The plurality of light emitting elements may have a vertical nanostructure.
Opening claim text (preview).
What is claimed is: 1. A display apparatus comprising: a transistor layer comprising at least one transistor; a light emitting element layer comprising at least one light emitting element, the at least one light emitting element comprising an inorganic material; and a quantum dot based color filter layer configured to adjust a color of light generated by the at least one light emitting element; wherein the transistor layer is electrically connected to the light emitting element layer, and wherein the display apparatus has a monolithic configuration including the transistor layer, the light emitting element layer, and the quantum dot based color filter layer. 2. The display apparatus of claim 1 further comprising a substrate, wherein the at least one light emitting element comprises vertical structure perpendicular to the substrate. 3. The display apparatus of claim 1 , wherein the at least one light emitting element comprises vertical structure. 4. The display apparatus of claim 1 , wherein the at least one light emitting element comprises a first conductivity type semiconductor, an active layer, and a second conductivity type semiconductor. 5. The display apparatus of claim 4 , wherein at least one of the first conductivity type semiconductor, the active layer, and the second conductivity type semiconductor comprises a gallium nitride (GaN)-based material. 6. The display apparatus of claim 1 , further comprising a substrate comprising Si. 7. The display apparatus of claim 1 further comprising a substrate, wherein the at least one transistor is spaced apart from the at least one light emitting element in a direction parallel to the substrate, such that the at least one transistor does not overlap with the at least one light emitting element. 8. The display apparatus of claim 1 , wherein the display apparatus further comprises an insulating layer covering the transistor layer and the light emitting element layer. 9. The display apparatus of claim 8 , wherein the insulating layer has a substantially flat surface. 10. The display apparatus of claim 1 , wherein the display apparatus further comprises a yellow recycling film (YRF) provided between the light emitting element layer and the quantum dot based color filter layer. 11. The display apparatus of claim 1 , wherein the display apparatus further comprises a blue cut filter (BCF) provided on the quantum dot based color filter layer. 12. The display apparatus of claim 1 , wherein the at least one light emitting element comprise a first group of blue light emitting elements corresponding to a first subpixel, a second group of blue light emitting elements corresponding to a second subpixel, and a third group of blue light emitting elements corresponding to a third subpixel, and the quantum dot based color filter layer comprises a blue-to-green color converting element corresponding to the second subpixel and a blue-to-red color converting element corresponding to the third subpixel. 13. The display apparatus of claim 12 , wherein the quantum dot based color filter layer further comprises a light scattering element corresponding to the first subpixel. 14. The display apparatus of claim 1 , wherein the display apparatus further comprises an active region comprising the at least one transistor and the at least one light emitting element and further comprises a scan driver connected to the active region and a data driver connected to the active region. 15. The display apparatus of claim 14 further comprising a substrate, wherein all of the active region, the scan driver, and the data driver are monolithically provided on the substrate. 16. The display apparatus of claim 15 , wherein the display apparatus further comprises an image signal processor and a communication part, and both the image signal processor and the communication part are monolithically provided on the substrate together with the active region, the scan driver, and the data driver. 17. An electronic apparatus comprising the display apparatus of claim 1 . 18. The electronic apparatus of claim 17 , wherein the electronic apparatus comprises one of a wearable apparatus and a portable apparatus. 19. The electronic apparatus of claim 18 , wherein the electronic apparatus comprises one of an augmented reality (AR) display, a virtual reality (VR) display, and a projection display.
integrated with passive devices, e.g. auxiliary capacitors · CPC title
comprising manufacture, treatment or coating of substrates · CPC title
wherein the TFTs are in active matrices · CPC title
of the light-emitting regions, e.g. non-planar junctions · CPC title
within the light-emitting regions · CPC title
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