Optoelectronic circuit with low-flicker light-emitting diodes

Patent metadata

Field	Value
Publication number	US-2017223784-A1
Application number	US-201515323233-A
Country	US
Kind code	A1
Filing date	Jul 8, 2015
Priority date	Jul 11, 2014
Publication date	Aug 3, 2017
Grant date	—

Abstract

An optoelectronic circuit for receiving a variable voltage having alternating increasing and decreasing phases. The optoelectronic circuit includes an alternating arrangement of resistive elements and light-emitting diode sets mounted in series. Each set contains two terminals. Each resistive element is inserted between two consecutive sets. The optoelectronic circuit includes, for each set among a plurality of said sets, a depletion mode metal oxide semiconductor field effect transistor, the drain and the source of which are coupled with the terminals of said set and the gate of which is coupled with one of the terminals of the next set. An additional resistive element is, for at least some of the transistors, coupled between the drain or the source of the transistor and one of the terminals of the set.

First claim

1 . An optoelectronic circuit intended to receive a variable voltage containing an alternation of increase and decrease phases, the optoelectronic circuit comprising:
an alternation of resistive elements and of sets of series-assembled light-emitting diodes, each set comprising two terminals, each resistive element being interposed between two successive sets; for each set from among a plurality of said sets, a depletion metal-oxide gate field effect transistor having its drain and its source coupled to the terminals of said set and having its gate coupled to one of the terminals of the next set, an additional resistive element being, for at least some of the transistors, coupled between the drain or the source of the transistor and one of the terminals of said set.

2 . The optoelectronic circuit of claim 1 , comprising N sets, where N is an integer in the range from 2 to 200, and comprising for each of the N-1 sets, a depletion metal-oxide gate field effect transistor having its drain and its source coupled to the terminals of said set and having its gate coupled to one of the terminals of the next set.

3 . The optoelectronic circuit of claim 1 , wherein at least some of the resistive elements have different resistance values.

4 . The optoelectronic circuit of claim 1 , where each resistive element comprises at least one electric resistor.

5 . The optoelectronic circuit of claim 1 , further comprising a fullwave rectifying circuit capable of supplying said voltage (V ALIM ).

6 . The optoelectronic circuit of claim 1 , comprising an integrated circuit comprising the sets of light-emitting diodes, the resistive elements, and the transistors.

7 . The optoelectronic circuit of claim 1 , wherein each light-emitting diode is a planar diode.

8 . The optoelectronic circuit of claim 1 , comprising an integrated circuit comprising a support, the sets of light-emitting diodes resting on the support, each light-emitting diode comprising at least one wire-shaped, conical, or frustoconical semiconductor element.

9 . The optoelectronic circuit of claim 8 , further comprising at least one insulating layer at least partially covering the support and, for each transistor, a semiconductor portion extending on the insulating layer and forming the source, the drain of the transistor, and the channel of the transistor, an insulating portion covering the semiconductor portion on the side opposite to the insulating layer and forming the gate insulator of the transistor.

10 . The optoelectronic circuit of claim 8 , wherein the support comprises a non-doped or doped semiconductor substrate of a first conductivity type, the optoelectronic circuit comprising, for each transistor, doped semiconductor regions of a second conductivity type, more heavily doped than the substrate, extending into the substrate and forming the source, the drain, and the channel of the transistor and an insulating portion extending on the substrate and forming the gate insulator of the transistor.

Assignees

• Aledia

Inventors

• Mercier Frédéric
• Dornel Erwan
• Hugon Xavier

Classifications

• H05B45/48

  having LEDs organised in strings and incorporating parallel shunting devices · CPC title

• H05B45/00

  Circuit arrangements for operating light-emitting diodes [LED] · CPC title

• H05B33/083 Primary

  Electricity · mapped topic

• H05B33/0815

  Electricity · mapped topic

• H01L33/62

  Electricity · mapped topic