Semiconductor light emitting device

Patent metadata

Field	Value
Publication number	US-11646398-B2
Application number	US-202117323042-A
Country	US
Kind code	B2
Filing date	May 18, 2021
Priority date	Sep 11, 2020
Publication date	May 9, 2023
Grant date	May 9, 2023

Abstract

A semiconductor light emitting device including a semiconductor laminate having first and second surfaces, the semiconductor laminate including first and second conductivity-type semiconductor layers, and an active layer between the semiconductor layers; a partition structure on the first surface, the partition structure having a window defining a light emitting region of the first surface of the semiconductor laminate; a wavelength converter in the window, the wavelength converter being configured to convert a wavelength of light emitted from the active layer; and a first electrode and a second electrode on the second surface of the semiconductor laminate and respectively connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the semiconductor laminate includes a plurality of first patterns arranged in the light emitting region of the first surface, and a plurality of second patterns arranged in a covered region of the first surface contacting the partition structure.

First claim

What is claimed is:

1. A semiconductor light emitting device, comprising:
at least one semiconductor laminate having a first surface and a second surface, opposing each other, the at least one semiconductor laminate including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;
a partition structure on the first surface of the at least one semiconductor laminate, the partition structure having a window defining a light emitting region of the first surface of the at least one semiconductor laminate;
a wavelength converter in the window, the wavelength converter being configured to convert a wavelength of light emitted from the active layer; and
at least one first electrode and at least one second electrode on the second surface of the at least one semiconductor laminate and respectively connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer,
wherein the at least one semiconductor laminate includes:
a plurality of first patterns arranged in the light emitting region of the first surface, and
a plurality of second patterns arranged in a covered region of the first surface contacting the partition structure.

2. The semiconductor light emitting device as claimed in claim 1 , wherein the plurality of first patterns have substantially the same shape and are arranged at a regular interval.

3. The semiconductor light emitting device as claimed in claim 2 , wherein the plurality of second patterns have shapes that are substantially identical to the shapes of the plurality of first patterns, and are arranged at an interval that is substantially identical to the interval between the plurality of first patterns.

4. The semiconductor light emitting device as claimed in claim 1 , wherein the plurality of second patterns are only in a portion of the covered region adjacent to the light emitting region.

5. The semiconductor light emitting device as claimed in claim 1 , wherein the plurality of second patterns are in an entirety of the covered region of the first surface contacting the partition structure.

6. The semiconductor light emitting device as claimed in claim 1 , wherein:
the plurality of second patterns have substantially the same shape and are arranged at a regular interval, and
the plurality of first patterns are irregularly arranged.

7. The semiconductor light emitting device as claimed in claim 1 , wherein each of the plurality of first patterns has a concave structure or a convex structure.

8. The semiconductor light emitting device as claimed in claim 7 , wherein a surface of each of the plurality of first patterns has a curved surface.

9. The semiconductor light emitting device as claimed in claim 1 , wherein:
the at least one semiconductor laminate further includes an undoped semiconductor layer on the first conductivity-type semiconductor layer, the undoped semiconductor layer having a surface forming the first surface of the at least one semiconductor laminate, and
the plurality of first patterns and the plurality of second patterns are on the surface of the undoped semiconductor layer.

10. The semiconductor light emitting device as claimed in claim 1 , wherein:
one region of the first conductivity-type semiconductor layer is exposed by a hole or trench passing through the second conductivity-type semiconductor layer and the active layer,
the semiconductor light emitting device further comprises an insulating layer having a first opening and a second opening, respectively exposing the one region of the first conductivity-type semiconductor layer and one region of the second conductivity-type semiconductor layer, and
the at least one first electrode is connected to the one region of the first conductivity-type semiconductor layer along the first opening, and the at least one second electrode is connected to the one region of the second conductivity-type semiconductor layer along the second opening.

11. The semiconductor light emitting device as claimed in claim 1 , wherein:
the at least one semiconductor laminate includes a plurality of semiconductor laminates each provided with a plurality of LED cells, and
the at least one first electrode or the at least one second electrode includes a plurality of electrodes respectively on the plurality of LED cells.

12. The semiconductor light emitting device as claimed in claim 11 , further comprising a reflective insulating portion between the plurality of LED cells,
wherein the partition structure is on the reflective insulating portion and has a plurality of windows respectively corresponding to the plurality of LED cells.

13. A semiconductor light emitting device, comprising:
a cell array including a plurality of LED cells, each LED cell respectively having a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, being separated from each other, and having a first surface and a second surface opposing the first surface;
a reflective insulating portion between the plurality of LED cells such that the plurality of LED cells are optically blocked from each other;
a partition structure on the first surface of the cell array and connected to the reflective insulating portion, the partition structure having a plurality of windows respectively corresponding to the plurality of LED cells;
at least one wavelength conversion layer in at least one window of the plurality of windows, the at least one wavelength conversion layer converting a wavelength of light generated by the active layer; and
a first electrode and a second electrode on the second surface of the cell array and electrically connected to the plurality of LED cells, respectively,
wherein the first surface of the cell array includes:
a plurality of first regions corresponding to the plurality of windows and in which a plurality of first patterns are arranged, and
a second region contacting the partition structure and in which a plurality of second patterns are arranged.

14. The semiconductor light emitting device as claimed in claim 13 , wherein the plurality of first patterns and the plurality of second patterns are arranged to have substantially the same regularity.

15. The semiconductor light emitting device as claimed in claim 13 , wherein:
the plurality of first patterns are irregularly arranged, and
the plurality of second patterns are arranged to have a predetermined regularity.

16. The semiconductor light emitting device as claimed in claim 13 , wherein:
the plurality of LED cells include a first LED cell, a second LED cell, and a third LED cell, and the active layer of each LED cell is configured to emit light of a first wavelength,
the at least one wavelength conversion layer includes a first wavelength conversion layer and a second wavelength conversion layer, respectively on windows on the second LED cell and the third LED cell among the plurality of windows, and
the first wavelength conversion layer is configured to convert light of a first wavelength into light of a second wavelength and the second wavelength conversion layer is configured to convert light of the first wavelength into light of a third wavelength.

17. The semiconductor light emitting device as claimed in claim 13 , further comprising at least one color filter layer on the

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Kiwon
• Kim Namsung
• Shin Youngsub
• Lee Jonghyun
• Chun Daemyung
• Choi Byungchul

Classifications

• H10H29/856

  Reflecting means · CPC title

• H10H20/8312

  extending at least partially through the bodies · CPC title

• H10H20/813

  having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies · CPC title

• H10H29/8514

  characterised by their shape, e.g. plate or foil · CPC title

• H10H29/142

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title