Semiconductor light-emitting device package

Patent metadata

Field	Value
Publication number	US-9887332-B2
Application number	US-201615056117-A
Country	US
Kind code	B2
Filing date	Feb 29, 2016
Priority date	May 29, 2015
Publication date	Feb 6, 2018
Grant date	Feb 6, 2018

Abstract

A semiconductor light-emitting device package includes: a light-emitting structure having a first surface, a second surface opposite to the first surface and side surfaces disposed between the first and the second surfaces, the light-emitting structure comprising a first light-emitting laminate and a second light-emitting laminate, each of the first and the second light emitting laminates including: a first conductivity-type semiconductor layer; an active layer, and a second conductivity-type semiconductor layer, an interconnector provided on the second surface of the light-emitting structure and configured to electrically connect the first and the second light-emitting laminates; a metal guide surrounding the side surfaces of the light-emitting structure; and an encapsulant surrounding the metal guide and the second and the side surfaces of the light-emitting structure and exposing the first surface of the light-emitting structure.

First claim

What is claimed is:

1. A semiconductor light-emitting device package, comprising:
a light-emitting structure having a first surface, a second surface opposite to the first surface and side surfaces disposed between the first surface and the second surface, the light-emitting structure comprising a first light-emitting laminate and a second light-emitting laminate, each of the first light-emitting laminate and the second light-emitting laminate comprising:
a first conductivity-type semiconductor layer;
an active layer, and
a second conductivity-type semiconductor layer, the first conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer being sequentially stacked in a direction from the first surface to the second surface,

an interconnector provided on the second surface of the light-emitting structure and configured to electrically connect the first light-emitting laminate and the second light-emitting laminate;
a metal guide surrounding the side surfaces of the light-emitting structure; and
an encapsulant surrounding the metal guide and the second and the side surfaces of the light-emitting structure and exposing the first surface of the light-emitting structure,
wherein the interconnector and the metal guide are disposed with substantially a same thickness, in a thickness direction of the first light-emitting laminate and the second light-emitting laminate.

2. The semiconductor light-emitting device package of claim 1 , wherein the encapsulant is provided between the metal guide and the light-emitting structure.

3. The semiconductor light-emitting device package of claim 1 , wherein the encapsulant is provided between the interconnector and the metal guide.

4. The semiconductor light-emitting device package of claim 1 , wherein at least a portion of the interconnector is connected to the metal guide.

5. The semiconductor light-emitting device package of claim 1 , wherein the first light-emitting laminate and the second light-emitting laminate are arranged in a first direction, and
wherein the interconnector extends from a first side to a second side opposite to the first side of the metal guide between adjacent light-emitting laminates in a second direction substantially perpendicular to the first direction.

6. The semiconductor light-emitting device package of claim 1 , wherein each of the first light-emitting laminate and the second light-emitting laminate further comprises:
a first electrode structure connected to the first conductivity-type semiconductor layer; and
a second electrode structure connected to the second conductivity-type semiconductor layer.

7. The semiconductor light-emitting device package claim 6 , wherein the first electrode structure comprises:
a first contact disposed in a contact hole passing through the second conductivity-type semiconductor layer and the active layer and exposing a portion of the first conductivity-type semiconductor layer while being in contact with the first conductivity-type semiconductor layer; and
a first connector connected to the first contact, and
wherein the second electrode structure comprises:
a second contact in contact with the second conductivity-type semiconductor layer; and
a second connector connected to the second contact.

8. The semiconductor light-emitting device package of claim 6 , wherein:
a first pad is provided on the first electrode structure of the first light-emitting laminate;
a second pad is provided on the second electrode structure of the second light-emitting laminate; and
first and second metal posts are connected to the first pad and the second pad, respectively, the first and second metal posts having portions exposed from the encapsulant so as to be connected to an external power source.

9. The semiconductor light-emitting device package of claim 8 , wherein the metal guide is connected to at least one of the first pad and the second pad.

10. The semiconductor light-emitting device package of claim 1 , wherein the interconnector connects the first conductivity-type semiconductor layer of the first light-emitting laminate to the second conductivity-type semiconductor layer of the second light-emitting laminate.

11. The semiconductor light-emitting device package of claim 1 , wherein the interconnector and the metal guide are formed of a same material.

12. The semiconductor light-emitting device package of claim 1 , wherein a first coefficient of thermal expansion of the metal guide is greater than a second coefficient of thermal expansion of the first light-emitting laminate and the second light-emitting laminate, and lower than a third coefficient of thermal expansion of the encapsulant.

13. The semiconductor light-emitting device package of claim 1 , further comprising a transparent resin layer containing phosphor on the first light-emitting laminate and the second light-emitting laminate.

14. The semiconductor light-emitting device package of claim 1 , wherein the first conductivity-type semiconductor layer comprises embossings formed on an upper surface thereof.

15. A semiconductor light-emitting device package, comprising:
a light-emitting structure having a first surface which is a light-emitting surface, a second surface opposite to the first surface and side surfaces disposed between the first surface and the second surface, the light-emitting structure comprising a first light-emitting laminate and a second light-emitting laminate, each of the first light-emitting laminate and the second light-emitting laminate comprising:
a first conductivity-type semiconductor layer;
an active layer, and
a second conductivity-type semiconductor layer, the first conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer being sequentially stacked in a direction from the first surface to the second surface,
an interconnector provided on the second surface of the light-emitting structure and configured to electrically connect the first light-emitting laminate and the second light-emitting laminate;
a metal guide surrounding the side surfaces of the light-emitting structure; and
an encapsulant surrounding the metal guide and the second and the side surfaces of the light-emitting structure and exposing the first surface of the light-emitting structure,
wherein an upper surface of the metal guide is disposed at a height equal to or lower than the first surface of the light-emitting structure, and
wherein the interconnector and the metal guide are disposed with substantially a same thickness, in a thickness direction of the first light-emitting laminate and the second light-emitting laminate.

16. A semiconductor light-emitting device package, comprising:
a light-emitting structure having a first surface, a second surface opposite to the first surface and side surfaces disposed between the first surface and the second surface, the light-emitting structure comprising at least one light-emitting laminate, the at least one light-emitting laminate comprising:
a first conductivity-type semiconductor layer;
an active layer; and
a second conductivity-type semiconductor layer, the first conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer being sequentially stacked in a direction from the first surface to the second surface;
a first electrode structure formed on the second surface of the light-emitting structure, disposed in a contact hole passing through the second conductivity-type semiconductor layer and the active layer to expose a portion

Assignees

• Samsung Electronics Co Ltd

Inventors

• Choi Pun Jae
• Ko Geun Woo
• Kwon Yong Min
• WOO Ah Young
• Lee Jun Ho
• Chung Jin Wook

Classifications

• H10W90/00

  Package configurations · CPC title

• H01L25/0753

  Electricity · mapped topic

• H01L33/56

  Electricity · mapped topic

• H01L33/486

  Electricity · mapped topic

• H01L25/167

  Electricity · mapped topic