Light emitting device

Patent metadata

Field	Value
Publication number	US-2022013692-A1
Application number	US-202117246693-A
Country	US
Kind code	A1
Filing date	May 2, 2021
Priority date	Jul 8, 2020
Publication date	Jan 13, 2022
Grant date	—

Abstract

The light emitting device includes a substrate, a light-emitting semiconductor structure, conductive pillars, an insulating layer, and first and second electrodes. The light-emitting semiconductor structure includes a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer disposed on the substrate from bottom to top. The conductive pillars are disposed in the light-emitting semiconductor structure. The conductive pillars penetrates is in contact with the second-type semiconductor layer and electrically connected to the substrate. A first portion of the insulating layer is disposed between the first-type semiconductor layer and the substrate, and a second portion of the insulating layer electrically insulates the first-type semiconductor layer and the light emitting-layer from the conductive pillars. The first electrode is electrically connected to the first-type semiconductor layer and electrically insulated from the conductive pillars. The second electrode is electrically connected to the conductive pillar.

First claim

What is claimed is:

1 . A light emitting device, comprises:
a die-bonding substrate having a first surface and a second surface opposite to each other, and the first surface including a light emitting area and an electrode area; a light emitting semiconductor structure disposed on the light emitting area, and the light emitting semiconductor structure including a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer from bottom to top; a plurality of conductive pillars disposed in the light emitting semiconductor structure at intervals, and each of the conductive pillars disposed through the first-type semiconductor layer and the light emitting layer and not disposed through the second-type semiconductor layer, wherein each of the conductive pillars is in direct contact with the second-type semiconductor layer and electrically connected to the die-bonding substrate; an insulating layer having a first portion and a second portion, the first portion disposed between the first-type semiconductor layer and the die-bonding substrate, and the second portion electrically insulating the first-type semiconductor layer and the light emitting layer from the conductive pillars, wherein the first portion has a trench and a plurality of openings, and the trench is adjacent to an edge of the light emitting semiconductor structure, and a first width of each of the openings is smaller than a second width of each of the conductive pillars; a first electrode disposed on the electrode area and electrically connected to the first-type semiconductor layer, and the first electrode electrically insulated from each of the conductive pillars; and a second electrode disposed on the second surface and electrically connected to the conductive pillars.

2 . The light emitting device of claim 1 , wherein a total length of the trench is greater than 60% of a circumference of the light emitting area.

3 . The light emitting device of claim 1 , wherein the trench continuously surrounds the edge of the light emitting area.

4 . The light emitting device of claim 1 , wherein the edge of the light emitting area and the nearest conductive pillar are separated by a distance, and a width of the trench is 10% to 30% of the distance.

5 . The light emitting device of claim 1 , wherein a first number of the openings is greater than a second number of the conductive pillars.

6 . The light emitting device of claim 1 , wherein a distance between two adjacent of the openings is greater than 1.5 times the first width.

7 . The light emitting device of claim 1 , further comprising:
a transparent conductive layer disposed between the first-type semiconductor layer and the first portion, wherein the transparent conductive layer includes indium tin oxide; and a first electrode extension portion disposed between the first portion and the die-bonding substrate, wherein the first electrode extension portion is electrically connected to the transparent conductive layer through the trench and the openings.

8 . The light emitting device of claim 7 , further comprising a metal layer disposed between the first electrode extension portion and the transparent conductive layer, and the metal layer fills the trench and the openings, wherein the metal layer includes silver or aluminum.

9 . A light emitting device, comprises:
a growth substrate; a light emitting semiconductor structure disposed on the growth substrate, the light emitting semiconductor structure including a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer from top to bottom; a plurality of conductive pillars disposed in the light emitting semiconductor structure at intervals, and each of the conductive pillars disposed through the first-type semiconductor layer and the light emitting layer and not disposed through the second-type semiconductor layer and in direct contact with the second-type semiconductor layer; an insulating layer having a first portion and a second portion, the first portion disposed on the first-type semiconductor layer, and the second portion electrically insulating the first-type semiconductor layer and the light emitting layer from the conductive pillars, wherein the first portion has a trench and a plurality of openings, and the trench is adjacent to an edge of the growth substrate, and a first width of each of the openings is smaller than a second width of each of the conductive pillars; and a first electrode and a second electrode disposed on the first-type semiconductor layer, wherein the first electrode is electrically connected to the first-type semiconductor layer and electrically insulated from the conductive pillars, and the second electrode is electrically connected to the conductive pillars.

10 . The light emitting device of claim 9 , wherein a total length of the trench is greater than 60% of a circumference of the growth substrate.

11 . The light emitting device of claim 9 , wherein the trench continuously surrounds the edge of the growth substrate.

12 . The light emitting device of claim 9 , wherein the edge of the growth substrate and the nearest conductive pillar are separated by a distance, and a width of the trench is 10% to 30% of the distance.

13 . The light emitting device of claim 9 , wherein a first number of the openings is greater than a second number of the conductive pillars.

14 . The light emitting device of claim 9 , wherein a distance between two adjacent of the openings is greater than 1.5 times the first width.

15 . The light emitting device of claim 9 , further comprising:
a transparent conductive layer disposed between the first-type semiconductor layer and the first portion, wherein the transparent conductive layer includes indium tin oxide; and a first electrode extension portion disposed between the first portion and the first electrode, wherein the first electrode extension portion is electrically connected to the transparent conductive layer through the trench and the openings.

16 . The light emitting device of claim 15 , further comprising a metal layer disposed between the first electrode extension portion and the transparent conductive layer, and the metal layer fills the trench and the openings, wherein the metal layer includes silver or aluminum.

Assignees

• Lextar Electronics Corp

Inventors

• Chen Jih-Kang
• Yang Shih-Wei
• Sung Tsai-Chen

Classifications

• H10H29/142

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/835

  Reflective materials · CPC title

• H10H20/833

  Transparent materials · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title