Resistance variable memory device with nanoparticle electrode and method of fabrication
US-9224948-B2 · Dec 29, 2015 · US
adapted for focusing electric field or current, e.g. tip-shaped
adapted for focusing electric field or current, e.g. tip-shaped · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10N70/8418 |
| Official title | {adapted for focusing electric field or current, e.g. tip-shaped} |
| Display label | adapted for focusing electric field or current, e.g. tip-shaped |
| Total patents | 499 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 61 |
| 2016 | 67 |
| 2017 | 41 |
| 2018 | 41 |
| 2019 | 45 |
| 2020 | 56 |
| 2021 | 44 |
| 2022 | 44 |
| 2023 | 38 |
| 2024 | 23 |
| 2025 | 29 |
| 2026 | 10 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Memory cells
US-2015372227-A1 · Dec 24, 2015 · US
Resistive random access memory cell structure with reduced programming voltage
US-9214230-B2 · Dec 15, 2015 · US
3D variable resistance memory device having junction FET and driving method thereof
US-9214225-B2 · Dec 15, 2015 · US
Electronic memory device having an electrode made of a soluble material
US-9209391-B2 · Dec 8, 2015 · US
RRAM cell with bottom electrode
US-9209392-B1 · Dec 8, 2015 · US
Highly Reliable Nonvolatile Memory and Manufacturing Method Thereof
US-2015349253-A1 · Dec 3, 2015 · US
Resistance memory device
US-9203020-B2 · Dec 1, 2015 · US
Switching element and method for fabricating semiconductor switching device
US-2015340606-A1 · Nov 26, 2015 · US
Memory including a selector switch on a variable resistance memory cell
US-9196355-B2 · Nov 24, 2015 · US
Nonvolatile memory devices
US-9196656-B2 · Nov 24, 2015 · US
Resistance-Switching Memory Cell With Multiple Raised Structures In A Bottom Electrode
US-2015333105-A1 · Nov 19, 2015 · US
Rram cell structure with laterally offset beva/teva
US-2015325786-A1 · Nov 12, 2015 · US
Vertical interconnect structure, memory device and associated production method
US-9177995-B2 · Nov 3, 2015 · US
Nonvolatile memory element and method of manufacturing the same
US-9172038-B2 · Oct 27, 2015 · US
Memristors with asymmetric electrodes
US-9171613-B2 · Oct 27, 2015 · US
Resistive memory with small electrode and method for fabricating the same
US-9142768-B2 · Sep 22, 2015 · US
Non-volatile semiconductor memory device
US-2015263277-A1 · Sep 17, 2015 · US
Non-volatile memory device having multi-level cells and method of forming the same
US-9130160-B2 · Sep 8, 2015 · US
Number of sons management in a cell network
US-9129514-B2 · Sep 8, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10N70/8418?
- CPC H10N70/8418 is the Cooperative Patent Classification code for “adapted for focusing electric field or current, e.g. tip-shaped.”
- How many patents are filed under CPC H10N70/8418 (adapted for focusing electric field or current, e.g. tip-shaped)?
- Our database includes 499 publications tagged with this CPC code.
- Is patent activity under CPC H10N70/8418 growing?
- Publication counts under this code: 23 in 2024 vs 29 in 2025 (latest complete years).