Semiconductor device having stacked oxide semiconductor layers

Patent metadata

Field	Value
Publication number	US-9520287-B2
Application number	US-201414296893-A
Country	US
Kind code	B2
Filing date	Jun 5, 2014
Priority date	Nov 28, 2009
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming an oxide component over a base component; forming a first oxide crystal component which grows from a surface toward an inside of the oxide component by heat treatment, and leaving an amorphous component just above a surface of the base component; and stacking a second oxide crystal component over the first oxide crystal component. In particular, the first oxide crystal component and the second oxide crystal component have common c-axes. Same-axis (axial) growth in the case of homo-crystal growth or hetero-crystal growth is caused.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a gate electrode;
a gate insulating film over the gate electrode;
a first oxide semiconductor layer over the gate insulating film;
a second oxide semiconductor layer over the first oxide semiconductor layer;
a third oxide semiconductor layer over the second oxide semiconductor layer; and
a source electrode and a drain electrode electrically connected to the second oxide semiconductor layer,
wherein the second oxide semiconductor layer comprises a channel formation region which overlaps with the gate electrode with the first oxide semiconductor layer and the gate insulating film interposed therebetween, and
wherein the second oxide semiconductor layer comprises crystals which are c-axis-aligned.

2. The semiconductor device according to claim 1 , further comprising:
an insulating film over and in contact with the third oxide semiconductor layer; and
a conductive layer over the insulating film,
wherein the gate electrode and the conductive layer overlap with each other with the channel formation region interposed therebetween.

3. The semiconductor device according to claim 1 ,
wherein the first oxide semiconductor layer comprises an amorphous region.

4. The semiconductor device according to claim 1 ,
wherein the third oxide semiconductor layer comprises crystals which are c-axis-aligned.

5. The semiconductor device according to claim 1 ,
wherein the c-axes of the crystals in the second oxide semiconductor layer are aligned perpendicular to a surface of the second oxide semiconductor layer.

6. The semiconductor device according to claim 1 ,
wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer and the third oxide semiconductor layer contains indium and zinc.

7. A semiconductor device comprising:
a gate electrode;
a gate insulating film;
a first oxide semiconductor layer;
a second oxide semiconductor layer;
a third oxide semiconductor layer; and
a source electrode and a drain electrode electrically connected to the second oxide semiconductor layer,
wherein the second oxide semiconductor layer is between the first oxide semiconductor layer and the third oxide semiconductor layer,
wherein the second oxide semiconductor layer comprises a channel formation region,
wherein the gate electrode and the channel formation region overlap with each other with the first oxide semiconductor layer and the gate insulating film interposed therebetween, and
wherein the second oxide semiconductor layer comprises crystals which are c-axis-aligned.

8. The semiconductor device according to claim 7 ,
wherein the first oxide semiconductor layer comprises an amorphous region.

9. The semiconductor device according to claim 7 ,
wherein the third oxide semiconductor layer comprises crystals which are c-axis-aligned.

10. The semiconductor device according to claim 7 ,
wherein the c-axes of the crystals in the second oxide semiconductor layer are aligned perpendicular to a surface of the second oxide semiconductor layer.

11. The semiconductor device according to claim 7 ,
wherein each of the second oxide semiconductor layer and the third oxide semiconductor layer contains indium, gallium and zinc, and
wherein composition ratio of the second oxide semiconductor layer and the third oxide semiconductor layer are different from each other.

12. The semiconductor device according to claim 7 ,
wherein a material of the second oxide semiconductor layer and a material of the third oxide semiconductor layer are different from each other.

13. A semiconductor device comprising:
a gate electrode;
a gate insulating film;
an oxide semiconductor layer comprising a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer; and
a source electrode and a drain electrode electrically connected to the oxide semiconductor layer,
wherein a relation of E c −E f <E g /2 is satisfied where E c is an energy at a bottom of a conduction band of the oxide semiconductor layer, E f is a Fermi energy of the oxide semiconductor layer, and E g is a band gap of the oxide semiconductor layer,
wherein the second oxide semiconductor layer comprises a channel formation region,
wherein the channel formation region and the gate electrode overlap with each other with the gate insulating film and the first oxide semiconductor layer interposed therebetween, and
wherein the second oxide semiconductor layer comprises crystals which are c-axis-aligned.

14. The semiconductor device according to claim 13 , further comprising:
an insulating film over and in contact with the third oxide semiconductor layer; and
a conductive layer over the insulating film,
wherein the gate electrode and the conductive layer overlap with each other with the channel formation region interposed therebetween.

15. The semiconductor device according to claim 13 ,
wherein the first oxide semiconductor layer comprises an amorphous region.

16. The semiconductor device according to claim 13 ,
wherein the third oxide semiconductor layer comprises crystals which are c-axis-aligned.

17. The semiconductor device according to claim 13 ,
wherein each of the second oxide semiconductor layer and the third oxide semiconductor layer contains indium, gallium and zinc, and
wherein composition ratio of the second oxide semiconductor layer and the third oxide semiconductor layer are different from each other.

18. The semiconductor device according to claim 13 , wherein a material of the second oxide semiconductor layer and a material of the third oxide semiconductor layer are different from each other.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3454

  Amorphous · CPC title

• H10P14/3248

  consisting of two layers · CPC title

• H10P14/2921 Primary

  being crystalline insulating materials · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title