Semiconductor device

Patent metadata

Field	Value
Publication number	US-9214520-B2
Application number	US-201414330597-A
Country	US
Kind code	B2
Filing date	Jul 14, 2014
Priority date	Nov 28, 2009
Publication date	Dec 15, 2015
Grant date	Dec 15, 2015

Abstract

An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a transistor comprising:
a first gate;
a first gate insulating film over the first gate;
an oxide semiconductor film over the first gate insulating film;
a second gate insulating film over the oxide semiconductor film; and
a second gate over the second gate insulating film,

wherein the oxide semiconductor film comprises indium and zinc,
wherein the oxide semiconductor film comprises a crystalline region…

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10P14/3434

  Electricity · mapped topic

• H10P14/3426

  Electricity · mapped topic

• H10P14/22

  Electricity · mapped topic

• H10D30/6734

  Electricity · mapped topic

• H10D62/80

  Electricity · mapped topic