Oxide semiconductor film and semiconductor device

Patent metadata

Field	Value
Publication number	US-9331208-B2
Application number	US-201514635199-A
Country	US
Kind code	B2
Filing date	Mar 2, 2015
Priority date	Dec 3, 2010
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm −1 and less than or equal to 0.7 nm −1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm −1 and less than or equal to 4.1 nm −1 . The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm −1 and less than or equal to 1.4 nm −1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm −1 and less than or equal to 7.1 nm −1 .

First claim

What is claimed is:

1. An oxide semiconductor film comprising a crystalline region,
wherein the oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.2 nm −1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm −1 and less than or equal to 4.1 nm −1 , and
wherein the oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.2 nm −1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm −1 and less than or equal to 7.1 nm −1 .

2. The oxide semiconductor film according to claim 1 , wherein the crystalline region comprises a crystal structure in which a c-axis is substantially perpendicular to a surface of the oxide semiconductor film.

3. The oxide semiconductor film according to claim 1 , wherein the oxide semiconductor film is in a non-single crystal state.

4. The oxide semiconductor film according to claim 2 , wherein measurement of the electron diffraction intensity is performed by irradiation with an electron beam from a direction of the c-axis.

5. The oxide semiconductor film according to claim 1 , wherein a spin density of a signal in a region where a g value is in a vicinity of 1.93 in ESR measurement of the oxide semiconductor film is lower than 1.3×10 18 spins/cm 3 .

6. The oxide semiconductor film according to claim 1 , wherein the oxide semiconductor film comprises indium and zinc.

7. A semiconductor device comprising the oxide semiconductor film according to claim 1 , the semiconductor device further comprising:
a gate electrode; and
a gate insulating film between the gate electrode and the oxide semiconductor film.

8. An oxide semiconductor film comprising a crystalline region,
wherein the oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm −1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm −1 and less than or equal to 4.1 nm −1 , and
wherein the oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm −1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm −1 and less than or equal to 7.1 nm −1 .

9. The oxide semiconductor film according to claim 8 , wherein the crystalline region comprises a crystal structure in which a c-axis is substantially perpendicular to a surface of the oxide semiconductor film.

10. The oxide semiconductor film according to claim 8 , wherein the oxide semiconductor film is in a non-single crystal state.

11. The oxide semiconductor film according to claim 9 , wherein measurement of the electron diffraction intensity is performed by irradiation with an electron beam from a direction of the c-axis.

12. The oxide semiconductor film according to claim 8 , wherein a spin density of a signal in a region where a g value is in a vicinity of 1.93 in ESR measurement of the oxide semiconductor film is lower than 1.3×10 18 spins/cm 3 .

13. The oxide semiconductor film according to claim 8 , wherein the oxide semiconductor film comprises indium and zinc.

14. A semiconductor device comprising the oxide semiconductor film according to claim 8 , the semiconductor device further comprising:
a gate electrode; and
a gate insulating film between the gate electrode and the oxide semiconductor film.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Tsubuku Masashi
• Akimoto Kengo
• Ohara Hiroki
• Honda Tatsuya
• Omata Takatsugu
• Nonaka Yusuke
• Takahashi Masahiro
• Miyanaga Akiharu

Classifications

• H10D30/6757 Primary

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D62/405

  Orientations of crystalline planes · CPC title

• H10D62/402

  Amorphous materials · CPC title

• H10D62/235

  of IGFETs (IGFETs having buried channels H10D30/637) · CPC title

• H10D62/80

  characterised by the materials · CPC title