Interconnect structure with redundant electrical connectors and associated systems and methods

US11626388B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11626388-B2
Application numberUS-202217580521-A
CountryUS
Kind codeB2
Filing dateJan 20, 2022
Priority dateMay 27, 2014
Publication dateApr 11, 2023
Grant dateApr 11, 2023

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Semiconductor die assemblies having interconnect structures with redundant electrical connectors are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die, a second semiconductor die, and an interconnect structure between the first and the second semiconductor dies. The interconnect structure includes a first conductive film coupled to the first semiconductor die and a second conductive film coupled to the second semiconductor die. The interconnect structure further includes a plurality of redundant electrical connectors extending between the first and second conductive films and electrically coupled to one another via the first conductive film.

First claim

Opening claim text (preview).

I claim: 1. A semiconductor device, comprising: a semiconductor substrate; a conductive trace disposed at a surface of the semiconductor substrate; and a plurality of redundant electrical connectors electrically coupled to the conductive trace and extending away from the semiconductor substrate. 2. The semiconductor device of claim 1 , further comprising a through-substrate via extend away from the conductive trace into the semiconductor substrate. 3. The semiconductor device of claim 2 , further comprising: a substrate contact coupled to a portion of the conductive trace and positioned directly between the conductive trace and the through-substrate via. 4. The semiconductor device of claim 1 , wherein the conductive trace is a first conductive trace and the plurality of redundant electrical connectors is a first plurality of redundant electrical connectors, and further comprising: a second conductive trace; and a second plurality of redundant electrical connectors electrically coupled to the conductive trace and extending away from the semiconductor substrate. 5. The semiconductor device of claim 4 , wherein the second plurality of redundant electrical connectors extend away from the semiconductor substrate in a different direction than does the first plurality of redundant electrical connectors. 6. The semiconductor device of claim 1 , further comprising: a dielectric material over the surface of the semiconductor substrate, wherein the conductive trace extends at least partially through the dielectric material. 7. The semiconductor device of claim 6 , wherein the dielectric material includes a plurality of openings exposing portions of the conductive trace, wherein the redundant electrical connectors extend through the openings. 8. The semiconductor device of claim 1 , wherein the plurality of redundant electrical connectors extend from the conductive trace and through a portion of a dielectric material disposed over the surface of the semiconductor substrate. 9. The semiconductor device of claim 1 , wherein each of the redundant electrical connectors includes: a conductive pillar coupled to the conductive trace, and a conductive bond material bonded to the conductive pillar. 10. The semiconductor device of claim 9 , wherein the conductive pillar comprises copper and the bond material comprises a solder material. 11. The semiconductor device of claim 9 , wherein the conductive pillar includes an end portion, and wherein the conductive bond material and conductive pillar form a conductive joint at the end portion. 12. The semiconductor device of claim 9 , wherein the conductive pillar includes generally vertical sidewalls and a barrier and/or seed material covering at least a portion of the sidewalls. 13. A semiconductor device, comprising: a semiconductor substrate; a patterned conductive film disposed at a surface of the semiconductor substrate; and a plurality of redundant electrical connectors electrically coupled to the patterned conductive film and extending away from the semiconductor substrate. 14. The semiconductor device of claim 13 , wherein each of the plurality of redundant electrical connectors includes: a conductive pillar coupled to the patterned conductive film, and a conductive bond material bonded to the conductive pillar. 15. The semiconductor device of claim 14 , wherein the conductive pillar comprises copper, and the bond material comprises a solder material. 16. The semiconductor device of claim 13 , wherein all of the plurality of redundant electrical connectors are electrically coupled to one another by the patterned conductive film. 17. A semiconductor device, comprising: a semiconductor substrate; a conductive structure disposed at a surface of the semiconductor substrate; and a plurality of redundant electrical connectors electrically coupled to the patterned conductive film and extending away from the semiconductor substrate, wherein all of the plurality of redundant electrical connectors are electrically coupled to one another by the conductive structure. 18. The semiconductor device of claim 17 , wherein each of the plurality of redundant electrical connectors includes: a conductive pillar coupled to the conductive structure, and a conductive bond material bonded to the conductive pillar. 19. The semiconductor device of claim 18 , wherein the conductive pillar comprises copper, and the bond material comprises a solder material. 20. The semiconductor device of claim 18 , wherein the conductive pillar includes generally vertical sidewalls and a barrier and/or seed material covering at least a portion of the sidewalls.

Assignees

Inventors

Classifications

  • between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

  • between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

  • between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

  • between stacked chips · CPC title

  • characterised by the relative positions of pads or connectors relative to package parts · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11626388B2 cover?
Semiconductor die assemblies having interconnect structures with redundant electrical connectors are disclosed herein. In one embodiment, a semiconductor die assembly includes a first semiconductor die, a second semiconductor die, and an interconnect structure between the first and the second semiconductor dies. The interconnect structure includes a first conductive film coupled to the first se…
Who is the assignee on this patent?
Micron Technology Inc
What technology area does this patent fall under?
Primary CPC classification H10W90/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 11 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 10 related publications on this page (citations in our corpus or others sharing the same primary CPC).