Silver bonding wire for semiconductor device containing indium, gallium, and/or cadmium
US-10381320-B2 · Aug 13, 2019 · US
Ag alloy bonding wire for semiconductor device
US11612966B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11612966-B2 |
| Application number | US-202017628842-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 12, 2020 |
| Priority date | Nov 22, 2019 |
| Publication date | Mar 28, 2023 |
| Grant date | Mar 28, 2023 |
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- Title
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Abstract
Official abstract text for this publication.
An object of the present invention is to provide an Ag alloy bonding wire for a semiconductor device capable of extending the high-temperature life of a wire, reducing chip damage during ball bonding, and improving characteristics such as ball bonding strength in applications of on-vehicle memory devices. The Ag alloy bonding wire for a semiconductor device according to the present invention contains one or more of In and Ga for a total of 110 at ppm or more and less than 500 at ppm, and one or more of Pd and Pt for a total of 150 at ppm or more and less than 12,000 at ppm, and a balance being made up of Ag and unavoidable impurities.
First claim
Opening claim text (preview).
The invention claimed is: 1. An Ag alloy bonding wire for a semiconductor device containing one or more of In and Ga for a total of 110 at. ppm or more and less than 500 at. ppm, and one or more of Pd and Pt for a total of 150 at. ppm or more and less than 12,000 at. ppm, and a balance being made up of Ag and unavoidable impurities. 2. The Ag alloy bonding wire for a semiconductor device according to claim 1 , wherein as a result of measuring crystal orientations of a wire surface of the bonding wire, an abundance ratio of a<100>crystal orientation having an angular difference of 15 degrees or less from a wire axial direction of the bonding wire is 60% or more and 100% or less, in terms of an area percentage. 3. The Ag alloy bonding wire for a semiconductor device according to claim 2 , wherein an average grain size in a cross section of the bonding wire in a direction perpendicular to a wire axis is 0.1 μm or more and less than 3.1 μm. 4. The Ag alloy bonding wire for a semiconductor device according to claim 3 , further containing one or more of B, P, Ca, Cu, and Zr for a total of 15 at. ppm or more and less than 450 at. ppm. 5. The Ag alloy bonding wire for a semiconductor device according to claim 2 , further containing one or more of B, P, Ca, Cu, and Zr for a total of 15 at. ppm or more and less than 450 at. ppm. 6. The Ag alloy bonding wire for a semiconductor device according to claim 1 , wherein an average grain size in a cross section of the bonding wire in a direction perpendicular to a wire axis is 0.1 μm or more and less than 3.1 μm. 7. The Ag alloy bonding wire for a semiconductor device according to claim 6 , further containing one or more of B, P, Ca, Cu, and Zr for a total of 15 at. ppm or more and less than 450 at. ppm. 8. The Ag alloy bonding wire for a semiconductor device according to claim 1 , further containing one or more of B, P, Ca, Cu, and Zr for a total of 15 at. ppm or more and less than 450 at. ppm.
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Classifications
comprising copper [Cu] · CPC title
comprising metals or metalloids, e.g. silver · CPC title
comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title
Materials of bond wires · CPC title
changes in materials · CPC title
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Frequently asked questions
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- What does patent US11612966B2 cover?
- An object of the present invention is to provide an Ag alloy bonding wire for a semiconductor device capable of extending the high-temperature life of a wire, reducing chip damage during ball bonding, and improving characteristics such as ball bonding strength in applications of on-vehicle memory devices. The Ag alloy bonding wire for a semiconductor device according to the present invention co…
- Who is the assignee on this patent?
- Nippon Steel Chemical & Mat Co Ltd, Nippon Micrometal Corp
- What technology area does this patent fall under?
- Primary CPC classification C22C5/06. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Mar 28 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).