Transmission-based temperature measurement of a workpiece in a thermal processing system

Patent metadata

Field	Value
Publication number	US-11610824-B2
Application number	US-202117183992-A
Country	US
Kind code	B2
Filing date	Feb 24, 2021
Priority date	Feb 28, 2020
Publication date	Mar 21, 2023
Grant date	Mar 21, 2023

Abstract

A thermal processing system for performing thermal processing can include a workpiece support plate configured to support a workpiece and heat source(s) configured to heat the workpiece. The thermal processing system can include window(s) having transparent region(s) that are transparent to electromagnetic radiation within a measurement wavelength range and opaque region(s) that are opaque to electromagnetic radiation within a portion of the measurement wavelength range. A temperature measurement system can include a plurality of infrared emitters configured to emit infrared radiation and a plurality of infrared sensors configured to measure infrared radiation within the measurement wavelength range where the transparent region(s) are at least partially within a field of view the infrared sensors. A controller can be configured to perform operations including obtaining transmittance and reflectance measurements associated with the workpiece and determining, based on the measurements, a temperature of the workpiece less than about 600° C.

First claim

What is claimed is:

1. A thermal processing system for performing thermal processing of semiconductor workpieces, the thermal processing system comprising:
a workpiece support plate configured to support a workpiece;
one or more heat sources configured to heat the workpiece;
one or more windows disposed between the workpiece support plate and the one or more heat sources, the one or more windows comprising one or more transparent regions that are transparent to at least a portion of electromagnetic radiation within a measurement wavelength range and one or more opaque regions that are opaque to electromagnetic radiation within the portion of the measurement wavelength range; and
a temperature measurement system configured to obtain a temperature measurement indicative of a temperature of the workpiece, the temperature measurement system comprising:
a plurality of infrared emitters configured to emit infrared radiation;
a plurality of infrared sensors, each infrared sensor corresponding to one of the plurality of infrared emitters, each of the plurality of infrared sensors configured to measure infrared radiation within the measurement wavelength range and disposed such that at least one of the one or more transparent regions is at least partially within a field of view of at least one of the plurality of infrared sensors; and
a controller configured to perform operations, the operations comprising:
obtaining, from the plurality of infrared sensors, at least one first transmittance measurement, at least one second transmittance measurement, and at least one reflectance measurement associated with the workpiece;
determining, based at least in part on the at least one first transmittance measurement, the at least one second transmittance measurement, and the at least one reflectance measurement, a temperature of the workpiece when the temperature of the workpiece is less than about 600° C.

2. The thermal processing system of claim 1 , wherein the operations further comprise:
obtaining, from the plurality of infrared sensors, one or more emission measurements indicative of an intensity of emitted radiation emitted by the workpiece; and
determining, based at least in part on the one or more emission measurements, the temperature of the workpiece when the temperature of the workpiece is greater than about 600° C.

3. The thermal processing system of claim 2 , wherein the one or more infrared emitters comprise a center emitter operable to emit radiation towards a center portion of the workpiece and an edge emitter operable to emit radiation towards an edge portion of the workpiece, and wherein the one or more infrared sensors comprise a center sensor corresponding to the center emitter and an edge sensor corresponding to the edge emitter.

4. The thermal processing system of claim 1 , wherein the one or more heat sources are configured to emit broadband radiation to heat the workpiece.

5. The thermal processing system of claim 4 , wherein the one or more opaque regions are configured to block at least a portion of the broadband radiation emitted by the heat sources and within the measurement wavelength range.

6. The thermal processing system of claim 5 , wherein the one or more opaque regions comprise hydroxyl doped quartz and wherein the one or more transparent regions comprise hydroxyl free quartz.

7. The thermal processing system of claim 1 , wherein at least one of the plurality of infrared emitters is pulsed at a pulsing frequency.

8. The thermal processing system of claim 7 , wherein at least one of the at least one first transmittance measurement, the at least one second transmittance measurement, or the at least one reflectance measurement is isolated from the plurality of infrared sensors based at least in part on the pulsing frequency.

9. The thermal processing system of claim 7 , wherein the pulsing frequency is 130 Hz.

10. The thermal processing system of claim 1 , wherein the measurement wavelength range comprises at least one of 2.3 micrometers or 2.7 micrometers.

11. The thermal processing system of claim 1 , comprising at least one optical notch filter disposed at least partially in the field of view of at least one of the plurality of infrared sensors, wherein the optical notch filter is configured to select at least a portion of the measurement wavelength range from a range of wavelengths capable of being measured by the at least one of the plurality of infrared sensors.

12. The thermal processing system of claim 1 , wherein the plurality of infrared sensors comprises one or more pyrometers.

13. The thermal processing system of claim 1 , wherein determining, based at least in part on the at least one first transmittance measurement, the at least one second transmittance measurement, and the at least one reflectance measurement, a temperature of the workpiece when the temperature of the workpiece is less than about 600° C. comprises:
determining, based at least in part on the at least one first transmittance measurement and the at least one reflectance measurement, an emissivity of the workpiece; and
determining, based at least in part on the at least one second transmittance measurement and the emissivity of the workpiece, the temperature of the workpiece.

14. The thermal processing system of claim 1 , wherein the at least one first transmittance measurement and the at least one reflectance measurement are associated with a first wavelength of the measurement wavelength range and the at least one second transmittance measurement is associated with a second wavelength of the measurement wavelength range, wherein the one or more opaque regions are opaque to the first wavelength and transparent to the second wavelength.

15. The thermal processing system of claim 1 , wherein the controller is configured to determine a reference intensity for at least one of the plurality of infrared sensors when no workpiece is present in the workpiece processing system by:
emitting a first amount of infrared radiation from a respective emitter of the plurality of infrared emitters;
determining a second amount of infrared radiation incident on a respective sensor of the plurality of infrared sensors; and
determining the reference intensity associated with the respective emitter and the respective sensor based at least in part on a variation between the first amount and the second amount.

16. A method for measuring a temperature of a workpiece in a thermal processing system, the method comprising:
emitting, by one or more infrared emitters, infrared radiation directed at one or more surfaces of a workpiece;
blocking, by one or more windows, at least a portion of broadband radiation emitted by one or more heating lamps configured to heat the workpiece from being incident on one or more infrared sensors;
measuring, by the one or more infrared sensors, a transmitted portion of the infrared radiation emitted by at least one of the one or more infrared emitters and passing through the one or more surfaces of the workpiece;
measuring, by the one or more infrared sensors, a reflected portion of the infrared radiation emitted by at least one of the one or more infrared emitters and reflected by the one or more surfaces of the workpiece; and
determining, based at least in part on the transmitted portion and the reflected portion, a first temperature measurement indicative of a temperature of the workpiece, wherein the temperature of the workpiece is less than about 600° C.

17. The method of claim 16 , further comprising:
measuring, by the one or more infrared sensors, an emitted

Assignees

• Mattson Tech Inc
• Beijing E Town Semiconductor Tech Co Ltd

Inventors

• Storek Michael
• Bremensdorfer Rolf
• Lieberer Markus
• Yang Michael

Classifications

• H10P74/277

  Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• G01J5/06

  Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity (for adjusting of solid angle of collected radiation G01J5/07; means for wavelength selection G01J5/0801) · CPC title