Deeply integrated voltage regulator architectures
US-11418120-B2 · Aug 16, 2022 · US
US11601059B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11601059-B2 |
| Application number | US-202217811042-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 6, 2022 |
| Priority date | Dec 26, 2018 |
| Publication date | Mar 7, 2023 |
| Grant date | Mar 7, 2023 |
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A system is disclosed. The system includes a substrate, and a first chip on the substrate, where a load circuit is integrated on the first chip. The system also includes a second chip on the substrate, where a power delivery circuit is configured to deliver current to the load circuit according to a regulated voltage at a node. The power delivery circuit includes a first circuit configured to generate an error signal based at least in part on the regulated voltage, and a voltage generator including power switches configured to modify the regulated voltage according to the error signal, where the first circuit of the power delivery circuit is integrated on the first chip, and where at least a portion of the power switches of the power delivery circuit are integrated on the second chip.
Opening claim text (preview).
What is claimed is: 1. A system comprising: a substrate; a first semiconductor die disposed on the substrate and including a load circuit and an error signal generation circuit; and a second semiconductor die disposed on the substrate and including a power converter circuit arranged to deliver power to the load circuit, the power converter circuit including a plurality of power switches coupled to a control circuit; wherein the control circuit receives an error signal from the error signal generation circuit and in response controls a power delivered to the load circuit via the plurality of power switches. 2. The system of claim 1 , wherein the power converter circuit is coupled to the load circuit at a node and wherein the error signal represents a difference between a regulated voltage at the node and a reference voltage. 3. The system of claim 2 , wherein the error signal represents the difference and the reference voltage multiplied by again factor. 4. The system of claim 2 , further comprising a reference voltage generator configured to generate the reference voltage, wherein the error signal represents the difference and the reference voltage and wherein the reference voltage generator is integrated on the first semiconductor die. 5. The system of claim 1 , wherein the error signal is an analog voltage. 6. The system of claim 1 , wherein the error signal is a digital value. 7. The system of claim 1 , wherein the error signal generation circuit comprises an analog-to-digital converter configured to generate the error signal. 8. The system of claim 1 , wherein the power converter circuit comprises a capacitor connected to the load circuit, wherein the capacitor is integrated on the first semiconductor die. 9. The system of claim 1 , wherein the power converter circuit comprises one or more inductors connected to the load circuit, wherein the inductors are formed on the substrate separate from the first and second semiconductor die. 10. The system of claim 1 , wherein the plurality of power switches are integrated on the second semiconductor die. 11. The system of claim 1 , wherein the power converter circuit comprises: a capacitor connected to the load circuit; and one or more inductors connected to the load circuit; wherein the plurality of power switches, the capacitor, and the one or more inductors collectively form a voltage regulator. 12. The system of claim 11 , wherein the voltage regulator is multiphase. 13. A method of forming a system, the method comprising: attaching a first semiconductor die to a substrate, the first semiconductor die including a load circuit and an error signal generation circuit; and attaching a second semiconductor die to the substrate, the second semiconductor die including a power converter circuit arranged to deliver power to the load circuit, the power converter circuit including a plurality of power switches coupled to a control circuit; wherein the control circuit receives an error signal from the error signal generation circuit and in response controls a power delivered to the load circuit via the plurality of power switches. 14. The method of claim 13 , wherein the power converter circuit is coupled to the load circuit at a node and wherein the error signal represents a difference between a regulated voltage at the node and a reference voltage. 15. The method of claim 14 , wherein the error signal represents the difference and the reference voltage multiplied by again factor. 16. The method of claim 13 , wherein the error signal is an analog voltage. 17. The method of claim 13 , wherein the error signal is a digital value. 18. The method of claim 13 , wherein the error signal generation circuit comprises an analog-to-digital converter configured to generate the error signal. 19. The method of claim 13 , wherein the power converter circuit comprises a capacitor connected to the load circuit, wherein the capacitor is integrated on the first semiconductor die. 20. The method of claim 13 , wherein the power converter circuit comprises one or more inductors connected to the load circuit, wherein the inductors are formed on the substrate separate from the first and second semiconductor die.
with digital control · CPC title
with a plurality of power processing stages connected in parallel · CPC title
using capacitors charged and discharged alternately by semiconductor devices with control electrode {, e.g. charge pumps} · CPC title
Constructional details, e.g. physical layout, assembly, wiring or busbar connections · CPC title
switched with a phase shift, i.e. interleaved · CPC title
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