Apparatus for and method of fabricating semiconductor device

Patent metadata

Field	Value
Publication number	US-11600776-B2
Application number	US-202017033460-A
Country	US
Kind code	B2
Filing date	Sep 25, 2020
Priority date	Mar 15, 2018
Publication date	Mar 7, 2023
Grant date	Mar 7, 2023

Abstract

An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.

First claim

What is claimed is:

1. A method of fabricating a semiconductor device, comprising:
providing a substrate on a heater chuck in a chamber including a housing and a slit valve, wherein the slit valve is configure to open or close a portion of the housing;
heating the substrate using the heater chuck; and
depositing a phase transition layer on the substrate by a physical vapor deposition method using a heat-dissipation shield between the housing and the heater chuck, and an edge heating structure between the heat-dissipation shield and the housing,
wherein the edge heating structure comprises:
an upper lamp provided above a level of a top surface of the slit valve, and
a lower lamp provided below a level of a bottom surface of the slit valve, and

wherein the heat-dissipation shield includes a tube shield, which extends from a top portion of the housing to a region below the heater chuck and has a first opening adjacent to the slit valve.

2. The method of claim 1 , wherein the heater chuck is rotated by a shaft in a bottom of the housing, and the heat-dissipation shield further comprises a first sector shield configured to open or close the first opening.

3. The method of claim 2 , wherein the first sector shield is connected to the shaft by a first branch arm.

4. The method of claim 2 , wherein the tube shield has a second opening opposed to the first opening.

5. The method of claim 4 , wherein the heat-dissipation shield further comprises a second sector shield configured to open of close the second opening.

6. The method of claim 5 , wherein the second sector shield is connected to the shaft by a second branch arm.

7. The method of claim 2 , wherein the first sector shield configured to close the first opening when the slit valve is closed.

8. A method of fabricating a phase transition memory device, comprising:
forming a lower electrode on a substrate;
forming a mold layer having a contact hole exposing the lower electrode; and
forming a phase transition layer in the contact hole,
wherein forming the phase transition layer in the contact hole comprises:
providing the substrate on a heater chuck in a chamber including a housing and a slit valve, wherein the slit valve is configured to open or close a portion of the housing;
heating the substrate using the heater chuck; and
depositing the phase transition layer on the substrate by a physical vapor deposition method using a heat-dissipation shield between the housing and the heater chuck, and an edge heating structure between the heat-dissipation shield and the housing,

wherein the edge heating structure comprises:
an upper lamp provided above a level of a top surface of the slit valve; and
a lower lamp provided below a level of a bottom surface of the slit valve, and

wherein the heat-dissipation shield includes a tube shield, which extends from a top portion of the housing to a region below the heater chuck and has a first opening adjacent to the slit valve.

9. The method of claim 8 , further comprising:
forming a word line on the substrate in a first direction;
forming a first mold layer exposing a portion of the word line; and
forming a diode on the word line exposed by the first mold layer.

10. The method of claim 9 , further comprising:
forming an upper electrode on the phase transition layer; and
forming a bit line on the upper electrode in a second direction intersecting the first direction.

11. The method of claim 8 , wherein forming of the phase transition layer comprises polishing the phase transition layer.

12. The method of claim 8 , wherein the heater chuck is rotated by a shaft in a bottom of the housing, and the heat-dissipation shield further comprises a first sector shield configured to open or close the first opening.

13. The method of claim 12 , wherein the first sector shield is connected to the shaft by a first branch arm.

14. The method of claim 12 , wherein the tube shield has a second opening opposed to the first opening.

15. The method of claim 14 , wherein the heat-dissipation shield further comprises a second sector shield configured to open of close the second opening.

16. The method of claim 15 , wherein the second sector shield is connected to the shaft by a second branch arm.

17. The method of claim 12 , wherein the first sector shield is configured to close the first opening when the slit valve is closed.

18. A method of fabricating a semiconductor device, comprising:
providing a substrate on a heater chuck in a chamber including a housing and a slit valve, wherein the slit valve is configured to open or close a portion of the housing;
heating the substrate using the heater chuck, wherein the heater chuck is rotated by a shaft disposed on a bottom of the housing; and
depositing a phase transition layer on the substrate by a physical vapor deposition method using a heat-dissipation shield between the housing and the heater chuck, and an edge heating structure between the heat-dissipation shield and the housing,
wherein the edge heating structure comprises:
an upper lamp provided above a level of a top surface of the slit valve, and
a lower lamp provided below a level of a bottom surface of the slit valve,

wherein the heat-dissipation shield comprises:
a tube shield, which extends from a top portion of the housing to a region below the heater chuck and has a first opening adjacent to the slit valve and a second opening opposed to the first opening,
a first sector shield connected to the shaft and configured to open or close the first opening, and
a second sector shield connected to the shaft and configured to open or close the second opening.

19. The method of claim 18 , wherein the first sector shield is connected to the shaft by a first branch arm.

20. The method of claim 18 , wherein the second sector shield is connected to the shaft by a second branch arm.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jung Jaeho
• Kim Kyoung Sun
• Park Jeonghee
• Park Jiho
• Park Changyup

Classifications

• H01J37/3414

  Targets · CPC title

• H01J37/32522 Primary

  Temperature · CPC title

• H01J37/3447

  Collimators, shutters, apertures · CPC title

• H01J2237/332

  Coating · CPC title

• H10B63/20

  comprising selection components having two electrodes, e.g. diodes · CPC title