Semiconductor device including a groove within a resin insulating part positioned between and covering parts of a first electrode and a second electrode

Patent metadata

Field	Value
Publication number	US-11569141-B2
Application number	US-201817058283-A
Country	US
Kind code	B2
Filing date	Aug 8, 2018
Priority date	Aug 8, 2018
Publication date	Jan 31, 2023
Grant date	Jan 31, 2023

Abstract

A semiconductor device includes a first electrode; a second electrode; a resin case surrounding the first electrode and the second electrode; and a resin insulating part made of a material the same as a material of the resin case and covering part of the first electrode and part of the second electrode inside the resin case. The resin insulating part contacts an inner wall of the resin case or is separated from the inner wall of the resin case. A move positioned between the first electrode and the second electrode is formed at the resin insulating part, and thus a space in which the resin insulating part does not exist or a material different from the resin insulating part is provided between the first electrode and the second electrode.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a first electrode;
a second electrode;
a resin case surrounding the first electrode and the second electrode; and
a resin insulating part made of a material same as a material of the resin case and covering part of the first electrode and part of the second electrode inside the resin case,
wherein a groove positioned between the first electrode and the second electrode is formed within the resin insulating part, the groove having an opening at each of two opposite ends of the groove.

2. The semiconductor device according to claim 1 , wherein the resin insulating part contacts an inner wall of the resin case.

3. The semiconductor device according to claim 2 , wherein the groove is provided at a part where the first electrode and the second electrode are closest to each other.

4. The semiconductor device according to claim 2 , wherein the first electrode is a collector electrode, and the second electrode is an emitter electrode.

5. The semiconductor device according to claim 2 , wherein the groove is one of a plurality of grooves formed within the resin insulating part, each of the plurality of grooves being positioned between the first electrode and the second electrode.

6. The semiconductor device according to claim 1 , wherein the groove is provided at a part where the first electrode and the second electrode are closest to each other.

7. The semiconductor device according to claim 6 , wherein the first electrode is a collector electrode, and the second electrode is an emitter electrode.

8. The semiconductor device according to claim 6 , wherein the groove is one of a plurality of grooves formed within the resin insulating part, each of the plurality of grooves being positioned between the first electrode and the second electrode.

9. The semiconductor device according to claim 1 , wherein the first electrode is a collector electrode, and the second electrode is an emitter electrode.

10. The semiconductor device according to claim 1 , wherein the groove is one of a plurality of grooves formed within the resin insulating part, each of the plurality of grooves being positioned between the first electrode and the second electrode.

11. The semiconductor device according to claim 1 , further comprising an insulator made of an organic material and provided to the groove.

12. The semiconductor device according to claim 1 , further comprising a semiconductor chip provided inside the resin case.

13. The semiconductor device according to claim 12 , wherein the semiconductor chip is formed of a wide bandgap semiconductor.

14. The semiconductor device according to claim 13 , wherein the wide bandgap semiconductor is silicon carbide, a gallium nitride material, or diamond.

15. The semiconductor device according to claim 1 , wherein the resin case includes outer walls having a height extending in a direction perpendicular to a plane and the groove extends longitudinally in a direction parallel to the plane.

16. The semiconductor device according to claim 1 , the semiconductor device further comprising an insulator made of a different material from the resin case and provided to the groove.

17. A semiconductor device comprising:
a first electrode;
a second electrode;
a resin case surrounding the first electrode and the second electrode; and
a resin insulating part made of a material same as a material of the resin case and covering part of the first electrode and part of the second electrode inside the resin case, wherein
a groove positioned between the first electrode and the second electrode is formed at the resin insulating part, and
a depth of the groove is equal to or larger than an embedding depth of the first electrode or the second electrode with respect to a position of an opening end of the groove.

18. The semiconductor device according to claim 17 , wherein the first electrode is a collector electrode, and the second electrode is an emitter electrode.

19. The semiconductor device according to claim 17 , wherein the resin insulating part contacts an inner wall of the resin case.

20. The semiconductor device according to claim 17 , wherein the groove is provided at a part where the first electrode and the second electrode are closest to each other.

21. A semiconductor device comprising:
a first electrode;
a second electrode;
a resin case surrounding the first electrode and the second electrode; and
a resin insulating part made of a material same as a material of the resin case and covering part of the first electrode and part of the second electrode inside the resin case,
wherein a groove positioned between the first electrode and the second electrode is formed at the resin insulating part, and
the semiconductor device further comprises a solid insulator made of an inorganic material and provided to the groove.

22. A semiconductor device comprising:
a first electrode;
a second electrode;
a resin case surrounding the first electrode and the second electrode; and
a resin insulating part made of a material same as a material of the resin case and covering part of the first electrode and part of the second electrode inside the resin case, wherein
a groove positioned between the first electrode and the second electrode is formed at the resin insulating part, and
the groove is provided with insulation gas having an insulating property higher than an insulating property of air.

Assignees

• Mitsubishi Electric Corp

Inventors

• Oya Daisuke
• Hayashida Yukimasa
• Motomiya Tetsuo

Classifications

• H01L23/057 Primary

  Electricity · mapped topic

• H01L29/41708

  Electricity · mapped topic

• H01L23/08

  Electricity · mapped topic

• H10W76/18

  Insulating materials, e.g. resins, glasses or ceramics · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title