CMP slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same

Patent metadata

Field	Value
Publication number	US-11560495-B2
Application number	US-202117155366-A
Country	US
Kind code	B2
Filing date	Jan 22, 2021
Priority date	Jan 23, 2020
Publication date	Jan 24, 2023
Grant date	Jan 24, 2023

Abstract

A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent, the solvent including a polar solvent or a non-polar solvent; an abrasive agent; and an oxidizing agent, wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.

First claim

What is claimed is:

1. A CMP slurry composition for polishing a tungsten pattern wafer, the composition comprising:
a solvent, the solvent including a polar solvent or a non-polar solvent;
about 0.001 wt % to about 20 wt % of an abrasive agent;
about 0.001 wt % to about 20 wt % of an organic acid;
about 0.001 wt % to about 10 wt % of a catalyst; and
about 0.01 wt % to about 20 wt % of an oxidizing agent, all wt % being based on a total weight of the composition,
wherein the abrasive agent includes silica modified with:
diethylenetriaminopropyltrimethoxysilane, diethylenetriaminopropyltriethoxysilane, diethylenetriaminopropylmethyldimethoxysilane, diethylenetriaminopropylmethyldiethoxysilane, or diethylenetriaminomethylmethyldiethoxysilane,
a cation derived from diethylenetriaminopropyltrimethoxysilane, diethylenetriaminopropyltriethoxysilane, diethylenetriaminopropylmethyldimethoxysilane, diethylenetriaminopropylmethyldiethoxysilane, or diethylenetriaminomethylmethyldiethoxysilane, or
a salt of diethylenetriaminopropyltrimethoxysilane, diethylenetriaminopropyltriethoxysilane, diethylenetriaminopropylmethyldimethoxysilane, diethylenetriaminopropylmethyldiethoxysilane, or diethylenetriaminomethylmethyldiethoxysilane.

2. The CMP slurry composition as claimed in claim 1 , wherein the abrasive agent has a positive charge on a surface thereof and has a surface potential of about 10 mV to about 60 mV.

3. The CMP slurry composition as claimed in claim 1 , wherein the composition has a pH of about 3 to about 6.

4. The CMP slurry composition as claimed in claim 1 , wherein the abrasive agent has an average particle diameter (D50) of about 10 nm to about 200 nm.

5. A method of polishing a tungsten pattern wafer, the method comprising polishing a tungsten pattern wafer using the CMP slurry composition as claimed in claim 1 .

6. The method as claimed in claim 5 , wherein the abrasive agent has a positive charge on a surface thereof and has a surface potential of about 10 mV to about 60 mV.

7. The method as claimed in claim 5 , wherein the composition has a pH of about 3 to about 6.

8. The method as claimed in claim 5 , wherein the abrasive agent has an average particle diameter (D50) of about 10 nm to about 200 nm.

9. A CMP slurry composition for polishing a tungsten pattern wafer, the composition comprising:
water;
1.5 wt % of silica modified with diethylenetriaminopropyltrimethoxysilane;
0.03 wt % of malonic acid;
0.15 wt % of glycine;
001 wt % of iron nitrate; and
0.15 wt % to 0.3 wt % of hydrogen peroxide, all wt % being based on a total weight of the composition.

Assignees

• Samsung Sdi Co Ltd

Inventors

• Kim Won Jung
• Koo Yoon Young
• Park Tae Won
• Lee Eui Rang
• Lee Jong Won
• Cho Youn Jin

Classifications

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• H01L21/3213

  Electricity · mapped topic

• C09G1/18

  on other substances · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title