Flexible light emitting device comprising a polyimide resin

Patent metadata

Field	Value
Publication number	US-11557697-B2
Application number	US-202117405547-A
Country	US
Kind code	B2
Filing date	Aug 18, 2021
Priority date	Jul 10, 2008
Publication date	Jan 17, 2023
Grant date	Jan 17, 2023

Abstract

An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

First claim

The invention claimed is:

1. A flexible light emitting device comprising:
a layer comprising a polyimide resin;
a first insulating layer over the layer comprising the polyimide resin, the first insulating layer comprising a second insulating layer and a third insulating layer;
a transistor over the first insulating layer, the transistor comprising a first gate electrode and a second gate electrode overlapping with a semiconductor layer;
a gate insulating layer between the semiconductor layer and the second gate electrode;
a fourth insulating layer over the second gate electrode, the fourth insulating layer comprising a first opening;
a fifth insulating layer over the fourth insulating layer, the fifth insulating layer comprising a second opening overlapping with the first opening;
a sixth insulating layer over the fifth insulating layer;
a first electrode of a light emitting element over the sixth insulating layer;
a seventh insulating layer having a curved surface;
an EL layer over the first electrode and in contact with the curved surface; and
a second electrode over the EL layer,
wherein the seventh insulating layer covers a side surface of the first electrode,
wherein the semiconductor layer comprises crystalline silicon,
wherein the seventh insulating layer overlaps with the second gate electrode, and
wherein the first opening and the second opening overlap with the semiconductor layer.

2. A flexible light emitting device comprising:
a layer comprising a polyimide resin;
a first insulating layer over the layer comprising the polyimide resin, the first insulating layer comprising a second insulating layer comprising silicon oxide and a third insulating layer comprising silicon nitride;
a transistor over the first insulating layer, the transistor comprising a first gate electrode and a second gate electrode overlapping with a semiconductor layer in which a channel is formed;
a gate insulating layer between the semiconductor layer and the second gate electrode, the gate insulating layer comprising silicon oxide;
a fourth insulating layer over the second gate electrode, the fourth insulating layer comprising a first opening and any one of silicon oxide and silicon nitride;
a fifth insulating layer over the fourth insulating layer, the fifth insulating layer comprising a second opening overlapping with the first opening and any one of silicon oxide and silicon nitride;
a sixth insulating layer over the fifth insulating layer, the sixth insulating layer comprising an organic material;
a first electrode of a light emitting element over the sixth insulating layer, the first electrode comprising an indium tin oxide;
a seventh insulating layer having a curved surface;
an EL layer over the first electrode and in contact with the curved surface; and
a second electrode over the EL layer,
wherein the seventh insulating layer covers a side surface of the first electrode, and
wherein the semiconductor layer comprises crystalline silicon.

3. A flexible light emitting device comprising:
a layer comprising a polyimide resin;
a first insulating layer over the layer comprising the polyimide resin, the first insulating layer comprising a second insulating layer comprising silicon oxide and a third insulating layer comprising silicon nitride;
a transistor over the first insulating layer, the transistor comprising a first gate electrode and a second gate electrode overlapping with a semiconductor layer in which a channel is formed;
a gate insulating layer between the semiconductor layer and the second gate electrode, the gate insulating layer comprising silicon oxide;
a fourth insulating layer over the second gate electrode, the fourth insulating layer comprising a first opening and any one of silicon oxide and silicon nitride;
a fifth insulating layer over the fourth insulating layer, the fifth insulating layer comprising a second opening overlapping with the first opening and any one of silicon oxide and silicon nitride;
a sixth insulating layer over the fifth insulating layer, the sixth insulating layer comprising an organic material;
a first electrode of a light emitting element over the sixth insulating layer, the first electrode comprising an indium tin oxide;
a seventh insulating layer having a curved surface;
an EL layer over the first electrode and in contact with the curved surface; and
a second electrode over the EL layer,
wherein the seventh insulating layer covers a side surface of the first electrode,
wherein the semiconductor layer comprises crystalline silicon,
wherein an end portion of the seventh insulating layer extends beyond an end portion of the semiconductor layer, and
wherein the end portion of the seventh insulating layer overlaps with the first electrode.

4. The flexible light emitting device according to claim 1 , wherein the transistor is electrically connected to the light emitting element.

5. The flexible light emitting device according to claim 2 , wherein the transistor is electrically connected to the light emitting element.

6. The flexible light emitting device according to claim 3 , wherein the transistor is electrically connected to the light emitting element.

7. The flexible light emitting device according to claim 1 , further comprising a second layer comprising a polyimide resin.

8. The flexible light emitting device according to claim 2 , further comprising a second layer comprising a polyimide resin.

9. The flexible light emitting device according to claim 3 , further comprising a second layer comprising a polyimide resin.

Assignees

• Semiconductor Energy Lab

Inventors

• Oikawa Yoshiaki
• Eguchi Shingo
• Mashiyama Mitsuo
• Kataniwa Masatoshi
• Shoji Hironobu
• Nakada Masataka
• Seo Satoshi

Classifications

• H01L51/524

  Electricity · mapped topic

• H01L51/56

  Electricity · mapped topic

• H01L51/003

  Electricity · mapped topic

• H01L51/5253

  Electricity · mapped topic

• H01L2227/326

  Electricity · mapped topic