Substrate cleaning method

Patent metadata

Field	Value
Publication number	US-11551941-B2
Application number	US-202016892396-A
Country	US
Kind code	B2
Filing date	Jun 4, 2020
Priority date	May 9, 2017
Publication date	Jan 10, 2023
Grant date	Jan 10, 2023

Abstract

A substrate cleaning apparatus includes a first processing unit configured to supply a first processing liquid for removing a residue adhering to a substrate onto the substrate on which a metal film is exposed at a recess of a pattern; a second processing unit configured to supply, onto the substrate, a second processing liquid for forming a protective film insoluble to the first processing liquid; a third processing unit configured to supply, onto the substrate, a third processing liquid for dissolving the protective film; and a control unit. The control unit performs forming the protective film on the metal film in a state that an upper portion of the pattern is exposed from the protective film; removing the residue adhering to the upper portion of the pattern after the forming of the protective film; and removing the protective film from the substrate after the removing of the residue.

First claim

We claim:

1. A substrate cleaning method, comprising:
providing a substrate on which a pattern having protrusion and recess is formed on a metal film and the metal film is exposed at the recess of the pattern;
a protective film forming processing of forming a protective film on the metal film by supplying, onto the substrate, a second processing liquid configured to form a protective film such that an upper portion of the protrusion of the pattern is protruded from an upper surface of the protective film;
a residue removing processing of removing a residue adhering to the upper portion of the pattern on the substrate by supplying a first processing liquid configured to remove the residue adhering to the substrate onto the substrate after being subjected to the protective film forming processing, the protective film being insoluble to the first processing liquid; and
a protective film removing processing of removing the protective film from the substrate by supplying, onto the substrate after being subjected to the residue removing processing, a third processing liquid configured to dissolve the protective film while leaving an entire portion of the metal film intact,
wherein the second processing liquid contains a compound having a fluorine atom,
wherein the compound is represented by Chemical Formula 1 as follows, and
[Chemical Formula 1]

R denotes an alkyl group.

2. The substrate cleaning method of claim 1 ,
wherein the third processing liquid is an organic solvent.

Assignees

• Tokyo Electron Ltd

Inventors

• Kagawa Koji
• Aibara Meitoku

Classifications

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P72/70

  for supporting or gripping · CPC title

• H10P72/10

  using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P70/00

  Cleaning of wafers, substrates or parts of devices · CPC title