Method of manufacturing EUV photo masks
US-12085843-B2 · Sep 10, 2024 · US
US11550225B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11550225-B2 |
| Application number | US-202117336480-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 2, 2021 |
| Priority date | Jun 3, 2020 |
| Publication date | Jan 10, 2023 |
| Grant date | Jan 10, 2023 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
An inner insert for a passage opening in an outer insert for an EUV radiation source is embodied in multiple parts and/or has a plurality of sections that extend in the longitudinal direction and have different internal diameters (di, da).
Opening claim text (preview).
What is claimed is: 1. An EUV radiation source, comprising a source chamber with a chamber wall having at least one chamber opening, a first insert, inserted into the chamber opening, with an outer passage channel extending in a longitudinal direction, and an inner insert, arranged in the outer passage channel, with an inner passage channel extending in the longitudinal direction, wherein the inner insert is embodied in two or more separate parts that adjoin one another in the longitudinal direction and has a plurality of sections that extend in the longitudinal direction and have different internal diameters (di, da), which are constant in the longitudinal direction. 2. The EUV radiation source of claim 1 , wherein the inner insert is arranged in the outer passage channel such that it completely covers an inner wall, which extends parallel to the longitudinal direction from a first end region to a second end region, of the outer passage channel in the region of the first end region in the direction perpendicular to the longitudinal direction. 3. An insert configured to be disposed in a source chamber of an EUV radiation source, in which the source chamber comprises a chamber wall having at least one chamber opening, the insert comprising an outer passage channel extending in a longitudinal direction, and an inner insert, arranged in the outer passage channel, with an inner passage channel extending in the longitudinal direction, wherein the inner insert is embodied in two or more separate parts that adjoin one another in the longitudinal direction and has a plurality of sections that extend in the longitudinal direction and have different internal diameters (di, da), which are constant in the longitudinal direction. 4. The insert of claim 3 , wherein the inner insert lies flat against the inside of the outer passage channel. 5. The insert of claim 3 , wherein the inner insert is arranged in the outer passage channel such that it completely covers an inner wall, which extends parallel to the longitudinal direction from a first end region to a second end region, of the outer passage channel in the region of the first end region in the direction perpendicular to the longitudinal direction. 6. An illumination system for a projection exposure apparatus, a mask inspection apparatus or a metrology system, having an EUV radiation source with an insert according to claim 3 . 7. A projection exposure apparatus for EUV lithography, comprising the illumination system according to claim 6 for illuminating a reticle arranged in an object field, and a projection optical unit for imaging the reticle onto a wafer arranged in an image field. 8. The projection exposure apparatus of claim 7 , wherein the inner insert lies flat against the inside of the outer passage channel. 9. The projection exposure apparatus of claim 7 , wherein the inner insert is arranged in the outer passage channel such that it completely covers an inner wall, which extends parallel to the longitudinal direction from a first end region to a second end region, of the outer passage channel in the region of the first end region in the direction perpendicular to the longitudinal direction. 10. A metrology system for inspecting a mask for EUV lithography, having the illumination system according to claim 6 . 11. The illumination system of claim 6 , wherein the inner insert lies flat against the inside of the outer passage channel. 12. The illumination system of claim 6 , wherein the inner insert is arranged in the outer passage channel such that it completely covers an inner wall, which extends parallel to the longitudinal direction from a first end region to a second end region, of the outer passage channel in the region of the first end region in the direction perpendicular to the longitudinal direction. 13. The illumination system of claim 6 , wherein the inner insert is produced at least partially from molybdenum or a molybdenum compound.
Mask illumination systems · CPC title
by plasma extreme ultraviolet [EUV] sources · CPC title
Assembly, maintenance, transport or storage of apparatus · CPC title
Production of X-ray radiation generated from plasma · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.