Integrated thin film resistor and metal-insulator-metal capacitor

Patent metadata

Field	Value
Publication number	US-11545486-B2
Application number	US-202017062292-A
Country	US
Kind code	B2
Filing date	Oct 2, 2020
Priority date	Oct 2, 2020
Publication date	Jan 3, 2023
Grant date	Jan 3, 2023

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to an integrated thin film resistor with a metal-insulator-metal capacitor and methods of manufacture. The structure includes: a first buffer contact on a substrate; a second buffer contact on the substrate, the second buffer contact being on a same wiring level as the first buffer contact; a resistive film contacting the first buffer contact and the second buffer contact, the resistive film extending on the substrate between the first buffer contact and the second buffer contact; and electrical contacts landing on both the first buffer contact and the second buffer contact, but not directly contacting with the resistive film.

First claim

What is claimed:

1. A structure comprising:
a first buffer contact on a substrate;
a second buffer contact on the substrate, the second buffer contact being on a same wiring level as the first buffer contact;
a resistive film contacting the first buffer contact and the second buffer contact, the resistive film extending on the substrate between the first buffer contact and the second buffer contact; and
electrical contacts landing on both the first buffer contact and the second buffer contact, but not directly contacting with the resistive film, wherein:
the first buffer contact and the second buffer contact are of a same material and are on a same wiring level as a plate of a metal-insulator-metal capacitor;
the metal-insulator-metal capacitor comprises a top plate and a bottom plate which includes spacer structures comprising the resistive film and insulative material which also covers the resistive film; and
additional insulator material is between the top plate and the spacer structure.

2. The structure of claim 1 , wherein the first buffer contact and the second buffer contact comprise conductive material with insulator material on the conductive material.

3. The structure of claim 2 , wherein:
the resistive film is on an upper surface of the insulator material of the first buffer contact and the second buffer contact;
the resistive film physically contacts an exposed, side surface of the conductive material of the first buffer contact and the second buffer contact; and
the first buffer contact and the second buffer contact extend beyond the resistive film.

4. The structure of claim 3 , wherein:
the electrical contacts are in physical contact with the conductive material of the first buffer contact and the second buffer contact; and
the resistive film is devoid of any physical contact with the electrical contacts.

5. The structure of claim 1 , wherein the insulative material also covers the resistive film between and over the first buffer contact and the second buffer contact.

6. The structure of claim 1 , wherein spacers are on sides of the first buffer contact and the second buffer contact, which oppose the exposed, side surface of the conductive material which contacts the resistive film.

7. The structure of claim 1 , wherein the metal-insulator-metal capacitor includes the bottom plate, the insulator material, the top plate and a top insulator material, and the bottom plate is on the same wiring level as the first buffer contact and the second buffer contact.

8. A structure comprising:
a first buffer contact on a substrate;
a second buffer contact on the substrate, the second buffer contact being on a same wiring level as the first buffer contact;
a resistive film contacting the first buffer contact and the second buffer contact, the resistive film extending on the substrate between the first buffer contact and the second buffer contact; and
electrical contacts landing on both the first buffer contact and the second buffer contact, but not directly contacting with the resistive film, wherein:
the first buffer contact and the second buffer contact are of a same material and are on a same wiring level as a plate of a metal-insulator-metal capacitor;
the metal-insulator-metal capacitor includes a bottom plate, an insulator material, a top plate and a top insulator material;
the bottom plate is within the substrate; and
the top plate is on the same wiring level as the first buffer contact and the second buffer contact.

9. The structure of claim 8 , wherein the top plate includes spacers comprising the resistive film and insulative material which also covers the resistive film.

10. A structure comprising:
a capacitor structure comprising:
a first plate comprising a conductive material;
an insulator material on the first plate; and
a second plate on the insulator material, the second plate comprising the conductive material; and

a thin film resistor structure comprising:
a first buffer contact on a same wiring level as the first plate of the capacitor;
a second buffer contact on the same wiring level as the first plate of the capacitor and the first buffer contact; and
a resistive film contacting sidewalls of the first buffer contact and the second buffer contact, the resistive film being located on the same wiring level as the first plate of the capacitor, the first buffer contact and the second buffer contact wherein:
the first plate is a top plate of the capacitor;
the top plate, the first buffer contact and the second buffer contact are composed of the conductive material; and
the second plate is a bottom plate of the capacitor embedded within a substrate material, below a wiring level of the first buffer contact and the second buffer contact.

11. The structure of claim 10 , wherein:
the bottom plate, the first buffer contact and the second buffer contact are composed of the conductive material.

12. The structure of claim 11 , further comprising spacers on the first plate and the second plate, wherein the spacers comprise the resistive film and insulative material over the resistive film.

13. The structure of claim 11 , wherein:
the first buffer contact and the second buffer contact comprise the insulator material on the conductive material;
the first buffer contact and the second buffer contact extend beyond the resistive film;
the resistive film is on an upper surface of the insulator material of the first buffer contact and the second buffer contact; and
the resistive film physically contacts an exposed, side surface of the conductive material of the first buffer contact and the second buffer contact.

14. The structure of claim 13 , further comprising electrical contacts in physical contact with the conductive material of the first buffer contact and the second buffer contact, and the resistive film is devoid of any physical contact with the electrical contacts.

15. The structure of claim 13 , further comprising spacers on the first buffer contact and the second buffer contact, wherein:
the spacers comprise the resistive film and insulative material; and
the spacers are on sides of the first buffer contact and the second buffer contact, which oppose the exposed, side surface of the conductive material which contact the resistive film.

16. A method comprising:
forming a first buffer contact and second buffer contact each of which comprise a conductive plate;
forming a resistive film on a substrate which contacts and extends between the first buffer contact and the second buffer contact; and
forming electrical contacts landing on the first buffer contact and the second buffer contact, but not landing on the resistive film to avoid punch through, wherein
the first buffer contact and the second buffer contact are of a same material and are on a same wiring level as a plate of a metal-insulator-metal capacitor,
a top plate and a bottom plate of a capacitor include spacer structures comprising the resistive film and insulative material which also covers the resistive film, and
additional insulator material is between the top plate and the spacer structure.

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Feng Chengang
• Shao Yanxia
• Setiawan Yudi
• Linewih Handoko
• Rao Xuesong

Classifications

• H01L28/60

  Electricity · mapped topic

• H01L28/20

  Electricity · mapped topic

• H01L27/0682 Primary

  Electricity · mapped topic

• H10D1/692 Primary

  Electrodes · CPC title

• H10D1/47

  Resistors having no potential barriers · CPC title