Extractor piping on outermost sidewall of immersion hood apparatus

US11543754B1 · US · B1

Patent metadata
FieldValue
Publication numberUS-11543754-B1
Application numberUS-202117349231-A
CountryUS
Kind codeB1
Filing dateJun 16, 2021
Priority dateJun 16, 2021
Publication dateJan 3, 2023
Grant dateJan 3, 2023

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

In some embodiments, the present disclosure relates to a process tool that includes a lithography apparatus arranged over a wafer chuck and an immersion hood apparatus laterally around the lithography apparatus. The lithography apparatus includes a photomask arranged between a light source and a lens. The immersion hood apparatus comprises input piping, output piping, and extractor piping. The input piping is arranged on a lower surface of the immersion hood apparatus and configured to distribute a liquid between the lens and the wafer chuck. The output piping is arranged on the lower surface of the immersion hood apparatus and configured to contain the liquid arranged between the lens and the wafer chuck. The extractor piping is arranged on an outer sidewall of the immersion hood apparatus and configured to remove any liquid above the wafer chuck that is outside of the immersion hood apparatus.

First claim

Opening claim text (preview).

What is claimed is: 1. A process tool, comprising: a lithography apparatus arranged over a wafer chuck and comprising: a photomask arranged over the wafer chuck, a light source arranged over the photomask, and a lens arranged between the photomask and the wafer chuck; and an immersion hood apparatus arranged over the wafer chuck and laterally around the lithography apparatus, wherein the immersion hood apparatus comprises: input piping arranged on a lower surface of the immersion hood apparatus and configured to distribute a liquid between the lens and the wafer chuck, output piping arranged on the lower surface of the immersion hood apparatus and configured to contain the liquid arranged between the lens and the wafer chuck, and extractor piping arranged on an outer sidewall of the immersion hood apparatus and configured to remove any liquid above the wafer chuck that is outside of the immersion hood apparatus, wherein the extractor piping extends into the immersion hood apparatus from the outer sidewall and is covered by an upper portion of the immersion hood apparatus. 2. The process tool of claim 1 , wherein the extractor piping comprises: a lower segment arranged at an acute angle with respect to the lower surface of the immersion hood apparatus; and an upper segment coupled to the lower segment and arranged at a right angle with respect to the lower surface of the immersion hood apparatus. 3. The process tool of claim 2 , wherein the lower segment meets the upper segment at an angle greater than 90 degrees. 4. The process tool of claim 3 , wherein the lower segment has a first diameter, and wherein the upper segment has a second diameter, and wherein the second diameter is greater than or equal to the first diameter. 5. The process tool of claim 3 , wherein pressure in the upper segment of the extractor piping is less than pressure in the lower segment of the extractor piping. 6. The process tool of claim 1 , wherein the extractor piping has a continuous opening on the outer sidewall of the immersion hood apparatus. 7. The process tool of claim 1 , wherein the extractor piping has multiple discrete openings on the outer sidewall of the immersion hood apparatus, and wherein the multiple discrete openings border on a common side of the immersion hood apparatus and are spaced from each other. 8. A process tool comprising: a wafer chuck configured to hold a semiconductor substrate; a lens arranged over the wafer chuck; a light source arranged over the lens; and an immersion hood apparatus arranged over the wafer chuck, wherein the lens is laterally surrounded by the immersion hood apparatus, and wherein the immersion hood apparatus comprises: input piping arranged on a lower surface of the immersion hood apparatus and configured to distribute a liquid between the lower surface of the immersion hood apparatus and the wafer chuck and between the lens and the wafer chuck, output piping arranged on the lower surface of the immersion hood apparatus and configured to contain the liquid arranged between the immersion hood apparatus and the wafer chuck, wherein the output piping laterally surrounds the input piping, and extractor piping arranged on a sidewall of the immersion hood apparatus and configured to remove residual liquid outside of an area of the semiconductor substrate that underlies the immersion hood apparatus and the lens, wherein the extractor piping is farther from the lens than the output piping; wherein the immersion hood apparatus comprises the sidewall and a second sidewall facing opposite directions and separated by a width of the immersion hood apparatus, and wherein the extractor piping extends into the immersion hood apparatus at a bottom corner of the sidewall and is configured to attract and remove the residual liquid outside of the area. 9. The process tool of claim 8 , wherein the wafer chuck is configured to move while the immersion hood apparatus and the lens remain stationary. 10. The process tool of claim 8 , wherein the extractor piping comprises multiple pipes on the sidewall of the immersion hood apparatus. 11. The process tool of claim 10 , wherein each pipe of the extractor piping has a lower segment arranged at an acute angle with respect to the lower surface of the immersion hood apparatus. 12. The process tool of claim 11 , wherein each pipe of the extractor piping has an upper segment that is substantially normal to the lower surface of the immersion hood apparatus. 13. The process tool of claim 8 , wherein the extractor piping has a diameter that varies throughout its length. 14. A method comprising: forming a photosensitive layer over a semiconductor substrate; loading the semiconductor substrate onto a wafer chuck, wherein an immersion hood apparatus overlies the semiconductor substrate, and wherein a light source, a photomask, and a lens are arranged over the semiconductor substrate and an opening in the immersion hood apparatus; using input piping of the immersion hood apparatus to apply a liquid over the semiconductor substrate and directly underlying the opening in the immersion hood apparatus and the lens; using output piping of the immersion hood apparatus such that the liquid is confined to an immersion area directly between the opening and the semiconductor substrate; using the light source to apply light through the photomask, the lens, the liquid, and the photosensitive layer to change a solubility of portions of a first area of the photosensitive layer according to the photomask; moving the wafer chuck; and using the light source to apply light through the photomask, the lens, the liquid, and the photosensitive layer to change a solubility of portions of a second area of the photosensitive layer according to the photomask, wherein residual liquid escapes from the immersion area and becomes uncovered by the immersion hood apparatus during the moving, wherein exhaust piping arranged on outer sidewalls of the immersion hood apparatus attracts and removes the residual liquid that escaped, wherein the exhaust piping has a pair of exhaust piping segments respectively on opposite sides of the immersion hood apparatus, wherein the exhaust piping segments extend into the immersion hood apparatus respectively from edges of a bottom surface of the immersion hood apparatus, and wherein the exhaust piping segments extend laterally towards each other. 15. The method of claim 14 , wherein the liquid has a refractive index greater than one. 16. The method of claim 14 , further comprising: developing the photosensitive layer to remove soluble portions of the photosensitive layer to form a patterned photosensitive layer comprising openings. 17. The process tool of claim 1 , wherein an inner sidewall of the immersion hood apparatus in the extractor piping is arranged edge-to-edge with the lower surface of the immersion hood apparatus, and wherein an edge-to-edge interface between the inner sidewall and the lower surface is directly under the outer sidewall of the immersion hood apparatus. 18. The process tool of claim 8 , wherein the immersion hood apparatus has a pair of inner sidewalls in the extractor piping and extending in parallel into an interior of the immersion hood apparatus, and wherein a first inner sidewall of the inner sidewalls extends from the bottom corner. 19. The process tool of claim 1 , wherein the extractor piping has a pair of extractor piping segments respectively on opposite sides of the immersion hood apparatus, wherein the extractor piping s

Assignees

Inventors

Classifications

  • characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

  • Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps · CPC title

  • using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps · CPC title

  • in the presence of a fluid, e.g. immersion; using fluid cooling means · CPC title

  • Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply (chemical composition of immersion liquids G03F7/2041) · CPC title

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What does patent US11543754B1 cover?
In some embodiments, the present disclosure relates to a process tool that includes a lithography apparatus arranged over a wafer chuck and an immersion hood apparatus laterally around the lithography apparatus. The lithography apparatus includes a photomask arranged between a light source and a lens. The immersion hood apparatus comprises input piping, output piping, and extractor piping. The …
Who is the assignee on this patent?
Taiwan Semiconductor Mfg Co Ltd
What technology area does this patent fall under?
Primary CPC classification G03F7/70916. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 03 2023 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).