Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Patent metadata

Field	Value
Publication number	US-11530481-B2
Application number	US-202016985552-A
Country	US
Kind code	B2
Filing date	Aug 5, 2020
Priority date	Sep 12, 2019
Publication date	Dec 20, 2022
Grant date	Dec 20, 2022

Abstract

Described herein is a technique capable of improving a uniformity of the characteristics of a film formed on a surface of a substrate by a rotary type apparatus. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a substrate support provided in the process chamber and including a plurality of placement parts on which the substrate is placed; a main nozzle provided so as to face a placement part among the plurality of the placement parts and including a first portion where no hole is provided so as to thermally decompose a process gas; and an auxiliary nozzle provided so as to face the placement part and including a second portion where no hole is provided so as to thermally decompose the process gas.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a process chamber in which a substrate is processed;
a substrate support provided in the process chamber and comprising a plurality of placement parts on which the substrate is placed;
a rotating part configured to rotate the substrate support;
a heater provided below or within the substrate support and configured to heat the substrate;
a plurality of nozzles including a main nozzle and a plurality of auxiliary nozzles;
the main nozzle provided above a placement part among the plurality of the placement parts so as to face the placement part and comprising a first portion where no hole is provided such that a process gas is thermally decomposed while passing through the first portion; and
the plurality of auxiliary nozzles, each of the plurality of auxiliary nozzles are provided above the placement part so as to face the placement part and arranged in parallel with the main nozzle, each of the plurality of auxiliary nozzle comprise a second portion where no hole is provided such that the process gas is thermally decomposed while passing through the second portion,
wherein the first portion and the second portion are provided at positions facing the heater,
wherein a length of the main nozzle, provided on a rotationally upstream side in a rotation direction of the substrate, is longer than each of the plurality of auxiliary nozzles provided or a rotationally downstream side of the substrate, and a length of each of the plurality of nozzles is proportional to a nozzle diameter of each of the plurality of the nozzles, and the nozzle diameter of each of the plurality of nozzles is proportional to a diameter of a hole provided at each of the nozzles, such that a thermal decomposition of the process gas flowing through each of the plurality of nozzles increases from an upstream side to a downstream side as the process gas flows from the upstream side to the downstream side of each of the plurality of nozzles.

2. The substrate processing apparatus of claim 1 , wherein a length of each of the plurality of nozzles gradually decreases from the rotationally upstream side to the rotationally downstream side along the rotation direction of the substrate.

3. The substrate processing apparatus of claim 1 , wherein the nozzle diameter of each of the plurality of nozzles gradually decreases from the rotationally upstream side to the rotationally downstream side along the rotation direction of the substrate.

4. The substrate processing apparatus of claim 1 , wherein the nozzle diameter of each of the plurality of nozzles gradually increases from the rotationally upstream side to the rotationally downstream side along the rotation direction of the substrate.

5. The substrate processing apparatus of claim 1 , further comprising:
a gas supply pipe configured to supply the process gas,
wherein the plurality of nozzles are connected to the gas supply pipe such that one among the plurality of nozzles is configured to supply the process gas via an outer peripheral portion of the process chamber and an other among the plurality of nozzles is configured to supply the process gas via a center portion of the process chamber.

6. The substrate processing apparatus of claim 1 , wherein front ends of the plurality of nozzles are configured to be open.

7. The substrate processing apparatus of claim 1 , further comprising:
a first exhaust part provided outside the substrate support and configured to exhaust the process gas.

8. The substrate processing apparatus of claim 7 , further comprising:
a second exhaust part provided closer to a center portion of the process chamber than the substrate and configured to exhaust the process gas.

9. The substrate processing apparatus of claim 8 , wherein the second exhaust part is provided at a ceiling of the process chamber.

10. The substrate processing apparatus of claim 8 , wherein the second exhaust part is provided at a partition, and the partition is provided at the center portion of the process chamber and on a surface of a ceiling of the process chamber facing a rotating shaft of the substrate support.

11. The substrate processing apparatus of claim 8 , wherein the second exhaust part is provided closer to the center portion of the process chamber than the plurality of the placement parts of the substrate support.

12. The substrate processing apparatus of claim 1 , wherein the main nozzle comprises a first hole at a front end thereof, a length of the first portion is longer than a length of a first hole portion of the main nozzle where the first hole is formed, and
each of the plurality of auxiliary nozzles comprise a second hole at a front end thereof, a length of the second portion is longer than a length of a second hole portion of each of the plurality of auxiliary nozzles where the second hole is formed.

13. The substrate processing apparatus of claim 1 , wherein a length of the first portion and a length of the second portion are configured to be adjusted such that a thermal decomposition amount of the process gas supplied through the main nozzle is substantially equal to a thermal decomposition amount of the process gas supplied through each of the plurality of auxiliary nozzles.

Assignees

• Kokusai Electric Corp

Inventors

• Ohashi Naofumi
• Yanai Hidehiro
• Takasaki Tadashi

Classifications

• H10P72/7621 Primary

  characterised by supporting two or more semiconductor substrates · CPC title

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P72/0434

  mainly by convection · CPC title

• C23C16/4584

  the substrate being rotated · CPC title

• C23C16/45551

  for relative movement of the substrate and the gas injectors or half-reaction reactor compartments · CPC title